2SK2796(L)-(1) [RENESAS]
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-251VAR;
| 型号： | 2SK2796(L)-(1) |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,5A I(D),TO-251VAR |
| 文件： | 总12页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-534C (Z)
4th. Edition
Jul. 1998
Features
•
Low on-resistance
RDS(on) = 0.12Ω typ.
4V gate drive devices.
High speed switching
•
•
Outline
DPAK |1
4
4
D
1
2
3
G
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
S
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
60
VGSS
ID
±20
V
5
A
Note1
Drain peak current
ID(pulse)
20
A
Body-drain diode reverse drain current IDR
5
A
Note3
Note3
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
IAP
5
A
EAR
2.14
mJ
W
°C
°C
Pch Note2
20
Tch
150
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SK2796(L), 2SK2796(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS 60
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = 60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = 1mA, VDS = 10V
ID = 3 A, VGS = 10VNote4
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
IDSS
—
—
1.0
—
—
10
µA
µA
V
IGSS
—
±10
2.0
0.16
VGS(off)
RDS(on)
—
Static drain to source on state
resistance
0.12
Ω
Static drain to source on state
resistance
RDS(on)
—
0.16
0.25
Ω
ID = 3A, VGS = 4VNote4
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
td(on)
tr
2.5
—
—
—
—
—
—
—
—
—
4.0
180
90
30
9
—
—
—
—
—
—
—
—
—
—
S
ID = 3A, VDS = 10VNote4
VDS = 10V
pF
pF
pF
ns
ns
ns
ns
V
VGS = 0
f = 1MHz
VGS = 10V, ID = 3A
RL = 10Ω
25
35
55
1.0
40
Turn-off delay time
Fall time
td(off)
tf
Body–drain diode forward voltage VDF
IF = 5A, VGS = 0
Body–drain diode reverse
recovery time
trr
ns
IF = 5A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
3
2SK2796(L), 2SK2796(S)
Main Characteristics
Power vs. Temperature Derating
40
Maximum Safe Operation Area
100
30
10
30
20
10
DC Operation (Tc = 25°C)
3
1
Operation in
this area is
limited by R
DS(on)
5
0.3
0.1
Ta = 25°C
0
50
100
150
200
0.2 0.5
1
2
10 20
50 100
(V)
Drain to Source Voltage
V
DS
Ambient Temperature Ta (°C)
Typical Output Characteristics
6 V
Typical Transfer Characteristics
10 V
5
5
4
3
2
1
5 V
4 V
3.5 V
25°C
–25°C
Pulse Test
3 V
4
3
2
1
Tc = 75°C
2.5 V
V
= 10 V
DS
V
= 2 V
8
GS
Pulse Test
0
0
2
4
6
8
(V)
GS
10
2
4
6
10
Gate to Source Voltage
V
Drain to Source Voltage
V
(V)
DS
4
2SK2796(L), 2SK2796(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
5
2.0
1.6
1.2
0.8
0.4
Pulse Test
Pulse Test
2
1
0.5
I
= 5 A
D
V
GS
= 4 V
10 V
0.2
0.1
2 A
1 A
0.05
6
0
2
4
8
10
0.1 0.3
1
3
10
30
(A)
100
Gate to Source Voltage
V
(V)
GS
Drain Current
I
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
10
5
0.5
Pulse Test
Tc = –25 °C
0.4
0.3
0.2
0.1
1 A
25 °C
2 A
2
I
= 5 A
D
75 °C
1
V
= 4 V
GS
0.5
5 A
1, 2 A
0.2
0.1
V
= 10 V
DS
Pulse Test
10 V
0
–40
0.5
1
2
5
0
40
80
120
160
0.1 0.2
10
Case Temperature Tc (°C)
Drain Current
I
(A)
D
5
2SK2796(L), 2SK2796(S)
Body–Drain Diode Reverse
Typical Capacitance vs.
Drain to Source Voltage
Recovery Time
1000
500
500
V
GS
= 0
f = 1 MHz
200
200
100
50
100
50
Ciss
Coss
20
10
20
10
di / dt = 50 A / µs
Crss
40
V
= 0, Ta = 25 °C
GS
5
0.1 0.2
0.5
1
2
5
10
0
10
20
30
50
Reverse Drain Current
I
(A)
DR
Drain to Source Voltage
V
(V)
DS
Dynamic Input Characteristics
= 5 A
Switching Characteristics
100
80
60
40
20
20
100
50
I
D
t
d(off)
V
= 10 V
25 V
16
12
8
DD
t
f
t
50 V
r
20
V
DS
t
d(on)
10
5
V
GS
4
0
V
= 50 V
25 V
DD
V
= 10 V, V
GS
= 30 V
2
1
DD
PW = 5 µs, duty < 1 %
10 V
0
0.5
1
2
5
2
4
6
8
10
0.1 0.2
10
Gate Charge Qg (nc)
Drain Current
I
(A)
D
6
2SK2796(L), 2SK2796(S)
Maximun Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
10
8
2.5
2.0
1.5
1.0
I
= 5 A
AP
V
= 25 V
DD
duty < 0.1 %
5 V
W
Rg > 50
6
10 V
V
= 0, –5 V
GS
4
2
0.5
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Source to Drain Voltage
V
(V)
Channel Temperature Tch (°C)
SD
Avalanche Test Circuit
Avalanche Waveform
V
DSS
– V
1
2
2
E
=
• L • I
•
AP
AR
V
DSS
DD
L
V
DS
Monitor
I
AP
Monitor
V
(BR)DSS
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
15 V
50W
V
DD
0
7
2SK2796(L), 2SK2796(S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
q
q
g
q
ch – c(t) = s (t) • ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
D.U.T.
90%
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50W
= 30 V
90%
td(off)
td(on)
t
f
tr
8
2SK2796(L), 2SK2796(S)
Package Dimensions
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
DPAK (L)-(1)
—
EIAJ
Conforms
0.42 g
Mass (reference value)
9
2SK2796(L), 2SK2796(S)
As of January, 2001
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
(4.9)
0 – 0.25
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
DPAK (S)-(1),(2)
—
Conforms
0.28 g
Mass (reference value)
10
2SK2796(L), 2SK2796(S)
As of January, 2001
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
(5.1)
(0.1)
(0.1)
0 – 0.25
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
DPAK (S)-(3)
—
EIAJ
Conforms
0.28 g
Mass (reference value)
11
2SK2796(L), 2SK2796(S)
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
12
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Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
HITACHI
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