2SK2414(0)-Z-E2-AZ [RENESAS]
Power MOSFETs for Automotive, , /;
| 型号： | 2SK2414(0)-Z-E2-AZ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Power MOSFETs for Automotive, , / 晶体管 |
| 文件： | 总9页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2414, 2414-Z
SWITCHING
N-CHANNEL POWER MOS FET
<R>
PACKAGE DIMENSIONS
DESCRIPTION
(Unit: mm)
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
2.3 0.2
0.5 0.1
6.5 0.2
5.0 0.2
4
FEATURES
• Low On-Resistance
3
RDS(on)1 = 70 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 mΩ MAX. (VGS = 4 V, ID = 5.0 A)
• Low Ciss: Ciss = 860 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
<R>
0.5 +−00..12
0.5 +−00..21
2.3 2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
MP-3
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(p
V
V
6.5 0.2
5.0 0.2
4.4 0.2
2.3 0.2
10
40
A
0.5 0.1
Note
Note
Note 1
Drain Current (pulse)
A
4
Total Power Dissipation (TC = 25 ˚C)
Total Power Dissipation (TA = 25 ˚C)
Channel Temperature
20
W
W
°C
1.0
1
2 3
ch
150
0.5 0.1
0.5 0.1
Storage Temperature
Tstg
–55 to +150 °C
2.3 0.3
2.3 0.3
0.15 0.15
Single Avalanche Current
IAS
10
10
A
1. Gate
2. Drain
3. Source
Single Avalanche Ener
EAS
mJ
4. Fin (Drain)
Notes 1 PW ≤ 10 uty Cycle ≤ 1 %
2 Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 → 0 V
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
MP-3Z (SURFACE MOUNT TYPE)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate Protection
Diode
Source
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13193EJ4V0DS00 (4th edition)
Date Published August 2006 N CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what." field.
2SK2414, 2414-Z
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
UNIT
mΩ
mΩ
V
CHARACTERISTIC
Drain to Source On-Resistance
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
SYMBOL
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
MIN.
TYP.
52
MAX.
70
TEST CONDITIONS
VGS = 10 V, ID = 5.0 A
VGS = 4 V, ID = 5.0 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 5.0 A
VDS = 60 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VDS = 10 V
68
95
1.0
7.0
1.6
12
2.0
S
µA
µA
pF
pF
pF
ns
10
10
IGSS
Ciss
860
440
110
15
Output Capacitance
Coss
Crss
VGS = 0 V
Reverse Transfer Capacitance
Turn-On Delay Time
f = 1 MHz
td(on)
tr
ID = 5.0 A
ns
Rise Time
90
VGS =
ns
Turn-Off Delay Time
td(off)
tf
75
VV
0 Ω
ns
Fall Time
35
n
C
V
Total Gate Charge
QG
24
= 10 A
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
2.6
6.0
1.0
85
VDD = 48 V
VGS = 10 V
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IF = 10 A, VGS = 0 V
ns
IF = 10 A, VGS = 0 V
di/dt = 50 A/µs
nC
Qrr
Test Circuit 1 Avalanche Capability
Test 2 Switching Time
D.U.T.
RG = 25 Ω
D.U.T.
L
VGS
RL
VGS
Wave
Form
90 %
V
GS
10 %
0
PG.
PG
RG
RG = 10 Ω
50 Ω
VDD
90 %
ID
VGS = 20 → 0 V
90 %
10 %
ID
VGS
10 %
0
B
ID
Wave
Form
IAS
0
VDS
t
d (on)
t
r
t
d (off)
t
f
ID
t
VDD
t
on
t
off
µ
t = 1
Duty Cycle ≤ 1 %
s
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
Data Sheet D13193EJ4V0DS
2
2SK2414, 2414-Z
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
24
20
16
12
80
60
40
20
8
4
0
0
20
40
60
80 100 120 140 160
20
40
6
80 100 120 140 160
T
C
- Case Temperature - °C
TC
emperature - °C
RAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
40
30
20
100
Pulsed
V
GS = 10 V
I
D (pulse)
µ
V
GS = 6 V
µ
ID (DC)
V
GS = 4 V
10
10
0
T
C
= 25 °C
Single Pulse
1
0.1
2
4
6
8
10
1
0
100
V
DS - Drain to Source Voltage - V
VDS - Draice Voltage - V
FORWARD TRANSFER CHARACTERISTICS
Pulsed
1000
VDS = 10 V
100
T
A
= –25 °C
25 °C
10
1
125 °C
0
1
2
3
4
5
6
7
8
VGS - Gate to Source Voltage - V
Data Sheet D13193EJ4V0DS
3
2SK2414, 2414-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth (ch-A) = 125 °C/W
Rth (ch-C) = 6.25 °C/W
1
0.1
Single Pulse
100 1000
0.01
10
µ
100
µ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
DRAIN TO E ON-STATE RESISTANCE vs.
GATE TCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
120
10
VDS = 10 V
Pulsed
I = 5.0 A
Pulsed
D
TA
= –25 °C
25 °C
75 °C
125 °C
60
40
20
1
10
100
0
5
10
15
20
ID - Drain Cur
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SOE ON-STATE
RESISTANCE vs. DRAIN CURRENT
120
100
80
2.0
1.5
1.0
V
DS = 10 V
Pulsed
I = 1 mA
D
V
GS = 4 V
60
40
20
VGS = 10 V
0.5
0
0
1
10
- Drain Current - A
100
–50 –25
0
25
50 75
100 125 150
ID
T
ch - Channel Temperature - °C
Data Sheet D13193EJ4V0DS
4
2SK2414, 2414-Z
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
120
100
100
10
VGS = 10 V
VGS = 4 V
80
60
VGS = 0 V
VGS = 10 V
40
20
0
1
I = 5.0 A
Pulsed
D
Pulsed
2.0
0.1
0
1.0
SD - Source to Drain Voltage - V
–50 –25
0
25 50 75
100 125 150
T
ch - Channel Temperature - °C
V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWCHARACTERISTICS
10000
1000
10
V
GS = 0 V
f = 1 MHz
tr
C
iss
td (off)
1000
100
10
Coss
tf
td (on)
C
rss
V
V
R
DD = 30 V
GS = 10 V
= 10 Ω
100
G
1.0
1
10
100
0.1
1.0
10
VDS - Drain to Sourge - V
I
D
- Drain Current - A
REVECOVERY TIME vs.
DRRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
50
80
60
16
14
I
V
D
= 10 A
DD = 48 V
12
10
VDS
VGS
40
20
8
6
4
2
0
di/dt = 50 A/
s
µ
VGS = 0 V
10
0.1
1.0
10
100
0
10
20
30
40
ID - Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D13193EJ4V0DS
5
2SK2414, 2414-Z
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
100
80
V
R
V
DD = 30 V
= 25 Ω
GS = 20 → 0 V
G
IAS ≤ 10 A
I
AS = 10 A
60
40
1.0
20
0
V
V
DD = 30 V
GS = 20 → 0 V
G
R = 25 Ω
µ
25
50
75
100
125
150
10
100
µ
1 m
10 m
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - °C
Data Sheet D13193EJ4V0DS
6
2SK2414, 2414-Z
•
The information in this document is current as of August, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrighother intellectual
property rights of third parties by or arising from the use of NEC Electronics producd in this document
or any other liability arising from the use of such products. No license, exprplied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEronics or others.
Descriptions of circuits, software and other related information in this docare provided for illustrative
purposes in semiconductor product operation and application exaThe incorporation of these
circuits, software and information in the design of a customer's ent shall be done under the full
responsibility of the customer. NEC Electronics assumes no ribility for any losses incurred by
customers or third parties arising from the use of these circuits, re and information.
•
• While NEC Electronics endeavors to enhance the quality, reand safety of NEC Electronics products,
customers agree and acknowledge that the possibility of thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (inclueath) to persons arising from defects in NEC
Electronics products, customers must incorporate ient safety measures in their design, such as
redundancy, fire-containment and anti-failure feat
• NEC Electronics products are classified into owing three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies onEC Electronics products developed based on a customer-
designated "quality assurance programspecific application. The recommended applications of an NEC
Electronics product depend on its quade, as indicated below. Customers must check the quality grade of
each NEC Electronics product beng it in a particular application.
"Standard": Computers, officment, communications equipment, test and measurement equipment, audio
and visual eq, home electronic appliances, machine tools, personal electronic equipment
and industrts.
"Special": Transporequipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, ani-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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TYSEMI
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