2SK2414-Z-E2 [NEC]
Small Signal Field-Effect Transistor, 10A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-3Z, SC-63, 3 PIN;
| 型号： | 2SK2414-Z-E2 |
| 厂家： | 
NEC |
| 描述： | Small Signal Field-Effect Transistor, 10A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-3Z, SC-63, 3 PIN 开关 晶体管 |
| 文件： | 总8页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2414, 2SK2414-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
2.3 ±0.2
6.5 ±0.2
5.0 ±0.2
0.5 ±0.1
FEATURES
4
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)
1
2 3
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
1.3 MAX.
• Low Ciss
Ciss = 840 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
0.6 ±0.1
0.6 ±0.1
2.3 2.3
1. Gate
2. Drain
QUALITY GRADE
3. Source
4. Fin (Drain)
Standard
MP-3
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
2.3 ±0.2
6.5 ±0.2
5.0 ±0.2
0.5 ±0.1
tions.
4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
1 2
3
Drain to Source Voltage
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
60
±20
±10
±40
20
V
V
0.9 0.8
1.3 MAX.
Gate to Source Voltage
MAX. MAX.
2.3 2.3
0.8
Drain Current (DC)
A
1. Gate
2. Drain
3. Source
Drain Current (pulse)*
A
Total Power Dissipation (Tc = 25 ˚C)
Total Power Dissipation (TA = 25 ˚C)
Channel Temperature
W
W
°C
4. Fin (Drain)
PT2
1.0
150
MP-3Z (SURFACE MOUNT TYPE)
Tch
Storage Temperature
Tstg
–55 to +150 °C
Drain
Single Avalanche Current**
Single Avalanche Energy**
IAS
10
10
A
EAS
mJ
Body
Diode
Gate
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13193EJ2V0DS00 (2nd edition)
(Previous No. TC-2495)
Date Published March 1998 N CP(K)
Printed in Japan
1994
©
2SK2414, 2SK2414-Z
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Drain to Source On-Resistance
Drain to Source On-Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
SYMBOL
RDS(on)1
RDS(on)2
VGS(off)
| yfs |
IDSS
MIN.
TYP.
52
MAX.
70
UNIT
mΩ
mΩ
V
TEST CONDITIONS
VGS = 10 V, ID = 5.0 A
VGS = 4 V, ID = 5.0 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 5.0 A
VDS = 60 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V
68
95
1.0
7.0
1.6
12
2.0
S
10
µA
µA
pF
pF
pF
ns
IGSS
±10
Ciss
860
440
110
15
Output Capacitance
Coss
Crss
VGS = 0
Reverse Transfer Capacitance
Turn-On Delay Time
f = 1 MHz
td(on)
tr
ID = 5.0 A
Rise Time
90
ns
VGS(on) = 10 V
Turn-Off Delay Time
td(off)
tf
75
ns
VDD = 30 V
RG = 10 Ω
Fall Time
35
ns
Total Gate Charge
QG
24
nC
nC
nC
V
ID = 10 A
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
2.6
6.0
1.0
85
VDD = 48 V
VGS = 10 V
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IF = 10 A, VGS = 0
ns
IF = 10 A, VGS = 0
di/dt = 50 A/µs
Qrr
220
nC
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
L
D.U.T.
V
GS
R
L
R
G
= 25 Ω
V
Wave
Form
GS
90 %
V
GS (on)
10 %
0
PG.
PG
RG
50 Ω
R = 10 Ω
G
V
DD
VDD
90 %
ID
V
GS = 20 V → 0
90 %
10 %
I
D
V
GS
10 %
0
BVDSS
I
D
I
AS
Wave
Form
0
V
DS
t
d (on)
t
r
t
d (off)
t
f
I
D
t
V
DD
t
on
t
off
µ
t = 1
s
Duty Cycle ≤ 1 %
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
= 2 mA
I
G
RL
PG.
50Ω
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2414, 2SK2414-Z
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
24
20
16
12
80
60
40
20
8
4
0
0
20
40
60
80 100 120 140 160
20
40
60
80 100 120 140 160
Tc
- Case Temperature - °C
T
c
- Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
50
40
30
20
100
Pulsed
V
GS = 10 V
V
I
D (pulse)
µ
GS = 6 V
µ
I
D (DC)
V
GS = 4 V
10
10
0
T
c
= 25 °C
Single Pulse
1
0.1
2
4
6
8
10
1
10
100
V
DS - Drain to Source Voltage - V
V
DS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
Pulsed
1000
V
DS = 10 V
100
T
A
= –25 °C
25 °C
10
1
125 °C
0
1
2
3
4
5
6
7
8
V
GS - Gate to Source Voltage - V
3
2SK2414, 2SK2414-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth (ch-a) = 125 °C/W
Rth (ch-c) = 6.25 °C/W
1
0.1
Single Pulse
100 1000
0.01
10µ
100µ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
10
1
120
100
80
VDS = 10 V
Pulsed
Pulsed
ID = 5 A
TA = –25 °C
25 °C
75 °C
125 °C
60
ID = 5 A
40
20
1
10
100
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
120
100
80
2.0
1.5
1.0
VDS = 10 V
ID = 1 mA
Pulsed
VGS = 4 V
60
40
20
VGS = 10 V
0.5
0
0
1
10
ID - Drain Current - A
100
–50 –25
0
25
50 75
100 125 150
Tch - Channel Temperature - °C
4
2SK2414, 2SK2414-Z
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
120
100
100
10
V
GS = 10 V
V
GS = 4 V
80
60
VGS = 0
V
GS = 10 V
40
20
0
1
I
D
= 5 A
Pulsed
2.0
0.1
0
1.0
SD - Source to Drain Voltage - V
–50 –25
0
25 50 75
100 125 150
T
ch - Channel Temperature - °C
V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
1000
100
10
V
GS = 0
f = 1 MHz
t
r
C
iss
t
d (off)
1000
100
10
Coss
t
f
t
d (on)
C
rss
V
V
R
DD = 30 V
GS = 10 V
= 10 Ω
100
G
1.0
1
10
100
0.1
1.0
10
VDS - Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
50
80
60
16
14
I
V
D
= 10 A
DD = 48 V
12
10
VDS
V
GS
40
20
8
6
4
2
0
di/dt = 50 A/
s
µ
VGS = 0
10
0.1
1.0
10
100
0
10
20
30
40
ID - Drain Current - A
Q
g
- Gate Charge - nC
5
2SK2414, 2SK2414-Z
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
100
80
V
R
DD = 30 V
G
= 25 Ω
VGS = 20 V → 0
I
AS ≤ 10 A
I
AS = 10 A
60
40
1.0
20
0
V
DD = 30 V
VGS = 20 V → 0
R = 25 W
G
25
50
75
100
125
150
10µ
100µ
1 m
10 m
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - °C
6
2SK2414, 2SK2414-Z
REFERENCE
Document Name
Document No.
C11745E
C11531E
C10535E
C10943X
MEI-1202
X10679E
D12971E
D12972E
D13085E
NEC semiconductor device reliability/quality control system.
Quality grade on NEC semiconductor devices.
Semiconductor device mounting technology manual.
IC package manual.
Guide to quality assurance for semiconductor devices.
Semiconductor selection guide.
Power MOS FET features and application switching power supply.
Application circuits using Power MOS FET.
Safe operating area of Power MOS FET.
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
7
2SK2414, 2SK2414-Z
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
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