2SK1624(S) [RENESAS]
2.4ohm, POWER, FET, LDPAK-3;型号: | 2SK1624(S) |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 2.4ohm, POWER, FET, LDPAK-3 |
文件: | 总8页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK1624(L), 2SK1624(S)
Silicon N-Channel MOS FET
ADE-208-1300 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
LDPAK
4
4
1
2
3
1
2
3
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2SK1624(L), 2SK1624(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
600
VGSS
±30
V
ID
4
A
1
Drain peak current
ID(pulse)
*
16
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
IDR
4
A
Pch*2
Tch
50
W
°C
°C
150
Tstg
–55 to +150
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
2
2SK1624(L), 2SK1624(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
V(BR)DSS 600
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown
voltage
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS ±30
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
2.0
—
—
—
—
1.8
±10
250
3.0
µA
µA
V
VGS = ±25 V, VDS = 0
VDS = 500 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V *1
Zero gate voltage drain current IDSS
Gate to source cutoff voltage
VGS(off)
Static Drain to source on state RDS(on)
resistance
2.4
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
td(on)
tr
2.2
—
—
—
—
—
—
—
—
3.5
600
140
25
—
—
—
—
—
—
—
—
—
S
ID = 2 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
pF
pF
pF
ns
ns
ns
ns
V
8
ID = 2 A, VGS = 10 V,
RL = 15
30
Turn-off delay time
Fall time
td(off)
tf
60
35
Body to drain diode forward
voltage
VDF
0.9
IF = 4 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
300
—
ns
IF = 4 A, VGS = 0,
diF/dt = 100 A/µs
Note 1. Pulse test
See characteristic curves of 2SK1402.
3
2SK1624(L), 2SK1624(S)
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature TC (°C)
4
2SK1624(L), 2SK1624(S)
Package Dimensions
As of January, 2001
Unit: mm
4.44 ± 0.2
1.3 ± 0.15
10.2 ± 0.3
2.59 ± 0.2
1.2 ± 0.2
1.27 ± 0.2
+ 0.2
– 0.1
0.86
0.76 ± 0.1
2.54 ± 0.5
0.4 ± 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
LDPAK (L)
—
EIAJ
—
Mass (reference value)
1.4 g
5
2SK1624(L), 2SK1624(S)
As of January, 2001
Unit: mm
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.15
+ 0.2
– 0.1
0.1
2.2
1.27 ± 0.2
0.4 ± 0.1
+ 0.2
– 0.1
1.2 ± 0.2
0.86
2.54 ± 0.5
2.54 ± 0.5
Hitachi Code
JEDEC
LDPAK (S)-(1)
—
EIAJ
—
Mass (reference value)
1.3 g
6
2SK1624(L), 2SK1624(S)
As of January, 2001
Unit: mm
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.2
+ 0.2
– 0.1
0.1
2.2
1.27 ± 0.2
0.4 ± 0.1
+ 0.2
1.2 ± 0.2
2.54 ± 0.5
0.86
– 0.1
2.54 ± 0.5
Hitachi Code
LDPAK (S)-(2)
JEDEC
—
EIAJ
—
Mass (reference value)
1.35 g
7
2SK1624(L), 2SK1624(S)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
8
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