2SK1624S [RENESAS]
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,4A I(D),TO-263ABVAR;
| 型号： | 2SK1624S |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,4A I(D),TO-263ABVAR |
| 文件： | 总4页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1624(L), 2SK1624(S)
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
LDPAK
4
4
1
2
3
1
2
3
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2SK1624(L), 2SK1624(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
600
VGSS
±30
V
ID
4
A
1
Drain peak current
ID(pulse)
IDR
Pch*2
*
16
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
4
A
50
W
°C
°C
Tch
150
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2
2SK1624(L), 2SK1624(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
V(BR)GSS
IGSS
600
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
±30
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
—
—
2.0
—
—
—
—
1.8
±10
250
3.0
2.4
µA
µA
V
VGS = ±25 V, VDS = 0
VDS = 500 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V *1
Zero gate voltage drain current IDSS
Gate to source cutoff voltage
VGS(off)
Static Drain to source on state RDS(on)
resistance
Ω
Forward transfer admittance
Input capacitance
|yfs|
2.2
—
—
—
—
—
—
—
—
3.5
600
140
25
—
—
—
—
—
—
—
—
—
S
ID = 2 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
Ciss
Coss
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
8
ID = 2 A, VGS = 10 V,
30
RL = 15 Ω
Turn-off delay time
Fall time
60
35
Body to drain diode forward
voltage
VDF
0.9
IF = 4 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
300
—
ns
IF = 4 A, VGS = 0,
diF/dt = 100 A/µs
Note 1. Pulse test
See characteristic curves of 2SK1402.
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature TC (°C)
3
2SK1624(L), 2SK1624(S)
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Tel: 415-589-8300
Fax: 535-1533
Fax: 415-583-4207
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Berkshire SL6 8YA
United Kingdom
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 0628-585000
Fax: 0628-778322
Tel: 27359218
Fax: 27306071
4
相关型号：
2SK1625(S)TR
Power Field-Effect Transistor, 7A I(D), 600V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RENESAS
©2020 ICPDF网 联系我们和版权申明