2SK1623S [RENESAS]
Silicon N Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1623S |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET |
| 文件： | 总8页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1623(L), 2SK1623(S)
Silicon N Channel MOS FET
REJ03G0958-0300
(Previous: ADE-208-1299)
Rev.3.00
Jan 10, 2006
Application
High speed power switching
Features
•
•
•
Low on-resistance
High speed switching
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
•
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
4
D
1. Gate
G
2. Drain
3. Source
4. Drain
1
2
3
1
2
3
S
Rev.3.00 Jan 10, 2006 page 1 of 7
2SK1623(L), 2SK1623(S)
Absolute Maximum Ratings
(Ta = 25°C)
Unit
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
V(BR)DSS
VGSS
Ratings
100
V
V
±20
ID
20
A
*1
Drain peak current
ID(pulse)
80
20
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch*2
Tch
A
50
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
100
±20
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V *3
ID = 10 A, VGS = 4 V *3
ID = 10 A, VDS = 10 V *3
—
—
V
—
±10
250
2.0
0.085
0.12
—
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
1.0
—
—
Static drain to source on state
resistance
0.065
0.085
16
Ω
—
Ω
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
td(on)
tr
10
—
S
1300
540
160
12
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
—
—
—
ID = 10 A, VGS = 10 V,
RL = 3 Ω
—
100
300
150
1.3
—
Turn-off delay time
Fall time
td(off)
tf
—
—
—
—
Body to drain diode forward voltage
VDF
trr
—
—
IF = 20 A, VGS = 0
Body to drain diode reverse recovery
time
—
300
—
ns
IF = 20 A, VGS = 0,
diF/dt = 50 A/µs
Note: 3. Pulse test
Rev.3.00 Jan 10, 2006 page 2 of 7
2SK1623(L), 2SK1623(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
60
40
20
100
30
10
3
1
Operation in
this area is
limited by RDS (on)
0.3
0.1
Ta = 25°C
0
0
50
100
150
1
3
10
30
100 300 1000
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
20
16
12
8
50
40
30
20
10
0
10 V
Pulse Test
4 V
7 V
5 V
VDS = 10 V
Pulse Test
3.5 V
3 V
Tc = 75°C
25°C
4
VGS = 2.5 V
–25°C
0
0
4
8
12
16
20
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
0.5
2.0
Pulse Test
ID = 20 A
Pulse Test
1.6
1.2
0.8
0.4
0
0.2
VGS = 4 V
0.1
0.05
10 V
10 A
5 A
0.02
0.01
0.005
2
5
10 20
50 100
200
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Jan 10, 2006 page 3 of 7
2SK1623(L), 2SK1623(S)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
0.20
0.16
0.12
0.08
0.04
0
50
Pulse Test
Tc = –25°C
25°C
20
10
10 A
ID = 20 A
5 A
VGS = 4 V
5
20 A
75°C
2
1
5 A, 10 A
10 V
0
VDS = 10 V
Pulse Test
0.5
0.2
–40
40
80
120
160
0.5
1
10
20
2
5
Case Temperature Tc (°C)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
1000
500
10000
1000
VGS = 0
f = 1 MHz
Ciss
200
100
50
Coss
100
10
Crss
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Pulse Test
20
10
0.5
1
2
5
10
20
50
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
ID = 20 A
Switching Characteristics
100
80
60
40
20
0
20
1000
500
t
d(off)
VDD = 25 V
50 V
80 V
16
VDS
200
100
VGS
12
8
t
f
t
r
50
VGS = 10 V, VDD = 30 V
PW = 2 µs, duty ≤ 1 %
4
VDD = 80 V
50 V
25 V
20
10
t
d(on)
0
0
20
40
60
80
100
0.5
1
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 Jan 10, 2006 page 4 of 7
2SK1623(L), 2SK1623(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
Pulse Test
10 V
5 V
4
VGS
= 0, –5 V
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D = 1
1
0.5
0.3
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 2.5°C/W, Tc = 25°C
PW
T
D =
PDM
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
10%
10%
D.U.T.
Vin
RL
Vout
10%
VDD
= 30 V
Vin
10 V
50 Ω
90%
90%
t
t
t
d(off)
t
f
d(on)
r
Rev.3.00 Jan 10, 2006 page 5 of 7
2SK1623(L), 2SK1623(S)
Package Dimensions
Package Name
LDPAK(L)
JEITA Package Code
RENESAS Code
PRSS0004AE-A
Previous Code
MASS[Typ.]
1.40g
Unit: mm
LDPAK(L) / LDPAK(L)V
4.44 0.2
1.3 0.15
10.2 0.3
1.3 0.2
1.37 0.2
2.49 0.2
+ 0.2
0.86
– 0.1
0.76 0.1
2.54 0.5
0.4 0.1
2.54 0.5
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
MASS[Typ.]
1.30g
Unit: mm
LDPAK(S)-(1) / LDPAK(S)-(1)V
4.44 0.2
7.8
6.6
10.2 0.3
1.3 0.15
2.49 0.2
+ 0.2
0.1
– 0.1
2.2
1.37 0.2
0.4 0.1
+ 0.2
– 0.1
1.3 0.2
0.86
2.54 0.5
2.54 0.5
Rev.3.00 Jan 10, 2006 page 6 of 7
2SK1623(L), 2SK1623(S)
Ordering Information
Part Name
Quantity
Shipping Container
2SK1623L-E
500 pcs
1000 pcs
Box (Sack)
Taping
2SK1623STL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Jan 10, 2006 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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