2SK1540S [RENESAS]
Silicon N Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1540S |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET |
| 文件： | 总8页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1540(L), 2SK1540(S)
Silicon N Channel MOS FET
REJ03G0952-0200
(Previous: ADE-208-1292)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
D
4
1. Gate
G
2. Drain
3. Source
4. Drain
1
2
3
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1540(L), 2SK1540(S)
Absolute Maximum Ratings
(Ta = 25°C)
Unit
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
Ratings
450
V
V
VGSS
±30
ID
7
A
1
Drain peak current
ID(pulse)
IDR
Pch*2
*
28
A
Body to drain diode reverse drain current
Channel dissipation
7
60
A
W
°C
°C
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
450
±30
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V *3
—
—
V
—
±10
250
3.0
0.8
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
2.0
—
—
Static drain to source on state
resistance
0.6
Ω
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
td(on)
tr
4.0
—
—
—
—
—
—
—
—
—
6.5
1050
280
40
—
—
—
—
—
—
—
—
—
—
S
ID = 4 A, VDS = 10 V *3
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
15
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
55
Turn-off delay time
Fall time
td(off)
tf
95
40
Body to drain diode forward voltage
VDF
trr
0.95
320
IF = 7 A, VGS = 0
Body to drain diode reverse recovery
time
ns
IF = 7 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 7
2SK1540(L), 2SK1540(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
80
50
20
10
5
60
40
20
2
1.0
0.5
0.2
0.1
Ta = 25°C
0.05
0
50
100
150
200
1
3
10
30
100 300 1,000
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
20
16
12
8
20
16
12
8
–25°C
10 V
7 V
6 V
TC = 25°C
75°C
VDS = 20 V
Pulse Test
Pulse Test
5 V
4
4
VGS = 4 V
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
5
10
8
Pulse Test
VGS = 10 V
Pulse Test
10 A
2
1.0
0.5
6
15 V
4
5 A
0.2
0.1
2
ID = 2 A
0.05
0
4
8
12
16
20
0.5 1.0
2
5
10
20
50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SK1540(L), 2SK1540(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
2.0
1.6
1.2
0.8
0.4
0
50
VGS = 10 V
Pulse Test
VDS = 20 V
Pulse Test
–25°C
20
10
5
TC = 25°C
75°C
ID = 10 A
2, 5 A
2
1.0
0.5
–40
0
40
80
120
160
0.1 0.2
0.5 1.0
2
5
10
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
5,000
1,000
5,000
VGS = 0
f = 1 MHz
di/dt = 100 A/µs, Ta = 25
VGS = 0
Pulse Test
°C
Ciss
2,000
1,000
500
Coss
100
200
100
50
Crss
30
10
5
0
10
20
40
50
0.2
0.5 1.0
2
5
10
20
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
500
200
500
400
300
200
100
20
16
12
8
•
= 30 V
VGS = 10 V VDD
•
PW = 2 µs, duty < 1%
VDD = 100 V
td (off)
250 V
400 V
VDS
100
50
VGS
tf
tr
20
10
5
ID = 7 A
td (on)
4
VDD = 400 V
250 V
100 V
0
0.2 0.5
1.0
2
5
10 20
0
8
16
24
32
40
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SK1540(L), 2SK1540(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
Pulse Test
4
5, 10 V
0.4
VGS = 0, –10 V
1.2 1.6
0
0.8
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D = 1
1.0
0.5
0.3
0.2
θch–c (t) = γS (t) • θch–c
θch–c = 2.08°C/W, TC = 25°C
0.1
0.1
0.05
PDM
0.02
0.03
PW
D =
T
PW
T
0.01
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveforms
90 %
Vout Monitor
RL
Vin
10 %
10 %
D.U.T
10 %
Vout
90 %
d (off)
90 %
t
50 Ω
t
t
t
f
d (on)
.
VDD = 30 V
r
Vin = 10 V
.
Rev.2.00 Sep 07, 2005 page 5 of 7
2SK1540(L), 2SK1540(S)
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
1.40g
Unit: mm
PRSS0004AE-A
LDPAK(L) / LDPAK(L)V
4.44 0.2
1.3 0.15
10.2 0.3
1.3 0.2
1.37 0.2
2.49 0.2
+ 0.2
– 0.1
0.86
0.76 0.1
2.54 0.5
0.4 0.1
2.54 0.5
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Package Name
MASS[Typ.]
1.30g
Unit: mm
LDPAK(S)-(1) / LDPAK(S)-(1)V
4.44 0.2
7.8
6.6
10.2 0.3
1.3 0.15
2.49 0.2
+ 0.2
0.1
– 0.1
2.2
1.37 0.2
0.4 0.1
+ 0.2
– 0.1
1.3 0.2
2.54 0.5
0.86
2.54 0.5
Rev.2.00 Sep 07, 2005 page 6 of 7
2SK1540(L), 2SK1540(S)
Ordering Information
Part Name
Quantity
Shipping Container
2SK1540L-E
500 pcs
1000 pcs
Box (Sack)
Taping
2SK1540STL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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