2SK1541 [HITACHI]
Silicon N-Channel MOS FET; 硅N沟道MOS FET
| 型号： | 2SK1541 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N-Channel MOS FET |
| 文件： | 总6页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK1540(L)(S), 2SK1541(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
LDPAK
4
4
1
2
3
1
2
3
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2SK1540(L)(S), 2SK1541(L)(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1540
2SK1541
VDSS
450
V
500
Gate to source voltage
Drain current
VGSS
±30
V
ID
7
A
1
Drain peak current
ID(pulse)
*
28
A
Body to drain diode reverse drain current
Channel dissipation
IDR
7
A
Pch*2
Tch
60
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Note 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2
2SK1540(L)(S), 2SK1541(L)(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
2SK1540 V(BR)DSS 450
—
—
V
ID = 10 mA, VGS = 0
2SK1541
500
Gate to source breakdown
voltage
V(BR)GSS ±30
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
—
—
±10
µA
µA
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V *1
Zero gate voltage
drain current
2SK1540 IDSS
2SK1541
250
Gate to source cutoff voltage
Static Drain to source 2SK1540 RDS(on)
on state resistance 2SK1541
VGS(off)
2.0
—
—
4.0
—
—
—
—
—
—
—
—
—
3.0
0.8
0.9
—
—
—
—
—
—
—
—
—
V
0.6
0.7
6.5
1050
280
40
Ω
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
Ciss
Coss
Crss
td(on)
tr
S
ID = 4 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
pF
pF
pF
ns
ns
ns
ns
V
15
ID = 4 A, VGS = 10 V,
55
RL = 7.5 Ω
Turn-off delay time
Fall time
td(off)
tf
95
40
Body to drain diode forward
voltage
VDF
0.95
IF = 7 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
320
—
ns
IF = 7 A, VGS = 0,
diF/dt = 100 A/µs
Note 1. Pulse test
See characteristic curves of 2SK1157, 2SK1158.
3
2SK1540(L)(S), 2SK1541(L)(S)
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature TC (°C)
4
Unit: mm
4.44 ± 0.2
1.3 ± 0.2
10.2 ± 0.3
2.59 ± 0.2
1.2 ± 0.2
1.27 ± 0.2
+ 0.2
– 0.1
0.86
0.76 ± 0.1
2.54 ± 0.5
0.4 ± 0.1
2.54 ± 0.5
Hitachi Code
JEDEC
EIAJ
LDPAK (L)
—
—
Weight (reference value) 1.4 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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