2SK1314L-E [RENESAS]
Silicon N Channel MOS FET; 硅N沟道MOS FET![2SK1314L-E](http://pdffile.icpdf.com/pdf1/p00153/img/icpdf/2SK13_848291_icpdf.jpg)
型号: | 2SK1314L-E |
厂家: | ![]() |
描述: | Silicon N Channel MOS FET |
文件: | 总8页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2SK1313(L), 2SK1313(S)
2SK1314(L), 2SK1314(S)
Silicon N Channel MOS FET
REJ03G0927-0200
(Previous: ADE-208-1266)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
D
4
1. Gate
G
2. Drain
3. Source
4. Drain
1
2
3
1
2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1313
2SK1314
VDSS
450
V
500
Gate to source voltage
Drain current
VGSS
±30
V
A
ID
5
1
Drain peak current
ID(pulse)
*
20
A
Body to drain diode reverse drain current
Channel dissipation
IDR
5
50
A
Pch*2
Tch
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
450
500
±30
—
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
2SK1313
2SK1314
V(BR)DSS
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V(BR)GSS
IGSS
—
—
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2.5 A, VGS = 10 V *3
±10
250
µA
µA
Zero gate voltage drain
current
2SK1313
2SK1314
IDSS
—
Gate to source cutoff voltage
VGS(off)
RDS(on)
2.0
—
—
2.5
—
—
—
—
—
—
—
—
—
—
1.0
1.2
4.0
640
160
20
3.0
1.4
1.5
—
—
—
—
—
—
—
—
—
—
V
Static drain to source on 2SK1313
Ω
state resistance
2SK1314
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
td(on)
tr
S
ID = 2.5 A, VDS = 10 V *3
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
10
ID = 2.5 A, VGS = 10 V,
RL = 12 Ω
25
Turn-off delay time
Fall time
td(off)
tf
50
30
Body to drain diode forward voltage
VDF
trr
0.95
300
IF = 5 A, VGS = 0
Body to drain diode reverse recovery
time
ns
IF = 5 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 7
2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S)
Main Characteristics
Power vs. Temperature Derating
60
Maximum Safe Operation Area
50
20
10
40
20
5
2
1.0
0.5
0.2
0.1
Ta = 25°C
2SK1313
2SK1314
0.05
0
50
100
150
1
3
10
30
100 300 1,000
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
10
8
10
8
10 V
–25°C
Pulse Test
6 V
TC = 25°C
5.5 V
VDS = 20 V
Pulse Test
75°C
6
6
5.0 V
4
4
4.5 V
2
2
VGS = 4 V
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
10
5
10
8
Pulse Test
VGS = 10 V
Pulse Test
15 V
2
1.0
0.5
5 A
6
4
2 A
2
0.2
0.1
ID = 1 A
0
4
8
12
16
20
0.5 1.0
2
5
10
20
50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
5
10
5
–25°C
VGS = 10 V
Pulse Test
4
VDS = 20 V
TC = 25°C
Pulse Test
75°C
2
1.0
0.5
3
ID = 5 A
2
2 A
1 A
1
0.2
0.1
0
–40
0
40
80
120
160
0.05 0.1 0.2
0.5 1.0
2
5
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1,000
100
5,000
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
Ciss
VGS = 0
f = 1 MHz
2,000
1,000
500
Coss
10
1
200
100
50
Crss
30
0.1 0.2
0.5 1.0
2
5
10
0
10
20
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
500
400
300
200
100
500
200
20
•
VGS = 10 V VDD = 30 V
VDD = 100 V
250 V
•
PW = 2 µs, duty < 1%
16
12
8
VDS
400 V
100
50
td (off)
VGS
tf
ID = 5 A
20
10
5
tr
VDD = 400 V
250 V
100 V
td (on)
4
0
0.1 0.2
0.5 1.0
2
5
10
0
8
16
24
32
40
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S)
Reverse Drain Current vs.
Source to Drain Voltage
10
8
Pulse Test
6
4
5, 10 V
0.4
2
VGS = 0, –10 V
1.2 1.6
0
0.8
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D = 1
0.5
1.0
0.3
0.1
0.2
θch–c (t) = γS (t) • θch–c
θch–c = 2.50°C/W, TC = 25°C
0.1
0.05
PDM
0.02
PW
D =
0.03
0.01
T
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveforms
90 %
Vout Monitor
RL
Vin
10 %
10 %
D.U.T
10 %
Vout
50 Ω
90 %
d (off)
90 %
t
.
VDD = 30 V
t
t
t
f
d (on)
Vin = 10 V
r
.
Rev.2.00 Sep 07, 2005 page 5 of 7
2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S)
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004AE-A
Package Name
MASS[Typ.]
1.40g
Unit: mm
LDPAK(L) / LDPAK(L)V
4.44 0.2
1.3 0.15
10.2 0.3
1.3 0.2
1.37 0.2
2.49 0.2
+ 0.2
– 0.1
0.86
0.76 0.1
2.54 0.5
0.4 0.1
2.54 0.5
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Package Name
MASS[Typ.]
1.30g
Unit: mm
LDPAK(S)-(1) / LDPAK(S)-(1)V
4.44 0.2
7.8
6.6
10.2 0.3
1.3 0.15
2.49 0.2
+ 0.2
0.1
– 0.1
2.2
1.37 0.2
0.4 0.1
+ 0.2
– 0.1
1.3 0.2
2.54 0.5
0.86
2.54 0.5
Rev.2.00 Sep 07, 2005 page 6 of 7
2SK1313(L), 2SK1313(S), 2SK1314(L), 2SK1314(S)
Ordering Information
Part Name
2SK1313L-E
Quantity
Shipping Container
500 pcs
1000 pcs
500 pcs
1000 pcs
Box (Sack)
Taping
2SK1313STL-E
2SK1314L-E
Box (Sack)
Taping
2SK1314STL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Colophon .3.0
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