2SK1315 [RENESAS]

Silicon N-Channel MOS FET; 硅N沟道MOS FET


型号：	2SK1315
厂家：	RENESAS TECHNOLOGY CORP
描述：	Silicon N-Channel MOS FET 硅N沟道MOS FET
文件：	总10页 (文件大小：57K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

To all our customers

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

Cautions

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Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

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contained therein.

2SK1315(L)(S), 2SK1316(L)(S)

Silicon N-Channel MOS FET

ADE-208-1267 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

No secondary breakdown

Suitable for switching regulator, DC-DC converter and motor driver

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

2SK1315(L)(S), 2SK1316(L)(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

2SK1315

2SK1316

V_DSS

450

500

Gate to source voltage

Drain current

V_GSS

±30

I_D

Drain peak current

I_D(pulse)

Body to drain diode reverse drain current

Channel dissipation

I_DR

Pch*²

Tch

°C

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T_C= 25°C

2SK1315(L)(S), 2SK1316(L)(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source

breakdown voltage

2SK1315 V_(BR)DSS450

—

I_D= 10 mA, V_GS= 0

2SK1316

500

Gate to source breakdown

voltage

V_(BR)GSS±30

—

I_G= ±100 µA, V_DS= 0

Gate to source leak current

I_GSS

—

±10

µA

V_GS= ±25 V, V_DS= 0

V_DS= 360 V, V_GS= 0

V_DS= 400 V, V_GS= 0

I_D= 1 mA, V_DS= 10 V

I_D= 4 A, V_GS= 10 V *¹

Zero gate voltage

drain current

2SK1315 I_DSS

2SK1316

250

Gate to source cutoff voltage

Static Drain to source 2SK1315 R_DS(on)

on state resistance 2SK1316

V_GS(off)

2.0

—

4.5

—

3.0

0.7

0.8

—

0.55

0.60

7.5

1150

340

Ω

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

|yfs|

Ciss

Coss

Crss

t_d(on)

t_r

I_D= 4 A, V_DS= 10 V *¹

V_DS= 10 V, V_GS= 0,

f = 1 MHz

I_D= 4 A, V_GS= 10 V,

R_L= 7.5 Ω

Turn-off delay time

Fall time

t_d(off)

t_f

100

Body to drain diode forward

voltage

V_DF

0.9

I_F= 8 A, V_GS= 0

Body to drain diode reverse

recovery time

t_rr

—

350

—

I_F= 8 A, V_GS= 0,

di_F/dt = 100 A/µs

Note: 1. Pulse test

See characteristic curves of 2SK1159, 2SK1160.

2SK1315(L)(S), 2SK1316(L)(S)

Power vs. Temperature Derating

100

150

Case Temperature T_C(°C)

2SK1315(L)(S), 2SK1316(L)(S)

Package Dimensions

As of January, 2001

Unit: mm

4.44 ± 0.2

1.3 ± 0.15

10.2 ± 0.3

2.59 ± 0.2

1.2 ± 0.2

1.27 ± 0.2

+ 0.2

– 0.1

0.86

0.76 ± 0.1

2.54 ± 0.5

0.4 ± 0.1

2.54 ± 0.5

Hitachi Code

JEDEC

LDPAK (L)

—

EIAJ

—

Mass (reference value)

1.4 g

2SK1315(L)(S), 2SK1316(L)(S)

As of January, 2001

Unit: mm

4.44 ± 0.2

7.8

6.6

10.2 ± 0.3

1.3 ± 0.15

+ 0.2

– 0.1

0.1

2.2

1.27 ± 0.2

0.4 ± 0.1

+ 0.2

1.2 ± 0.2

2.54 ± 0.5

0.86

– 0.1

2.54 ± 0.5

Hitachi Code

JEDEC

LDPAK (S)-(1)

—

EIAJ

—

Mass (reference value)

1.3 g

2SK1315(L)(S), 2SK1316(L)(S)

As of January, 2001

Unit: mm

4.44 ± 0.2

7.8

6.6

10.2 ± 0.3

1.3 ± 0.2

+ 0.2

– 0.1

0.1

2.2

1.27 ± 0.2

0.4 ± 0.1

+ 0.2

1.2 ± 0.2

2.54 ± 0.5

0.86

– 0.1

2.54 ± 0.5

Hitachi Code

JEDEC

LDPAK (S)-(2)

—

EIAJ

—

Mass (reference value)

1.35 g

2SK1315(L)(S), 2SK1316(L)(S)

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

Asia

: http://semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

: http://sicapac.hitachi-asia.com

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive, Dornacher Straβe 3

Hitachi Europe GmbH

Electronic Components Group

Hitachi Asia Ltd.

Hitachi Tower

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Singapore 049318

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Group III (Electronic Components)

7/F., North Tower,

San Jose,CA 95134

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World Finance Centre,

Tel: <1> (408) 433-1990 Germany

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Fax: <49> (89) 9 29 30 00

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon,

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://www.hitachi.com.hk

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road,

Hung-Kuo Building,

Taipei (105), Taiwan

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

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Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Colophon 2.0

2SK1315 [RENESAS]

相关型号：

2SK1315(L)

2SK1315(S)

2SK1315(S)

2SK1315(S)TL

2SK1315(S)TL

2SK1315(S)TR

2SK1315(S)TR

2SK1315L

2SK1315L

2SK1315L-E

2SK1315S

2SK1315S