2SJ555 [RENESAS]
Silicon P Channel MOS FET; 硅P沟道MOS场效应晶体管
| 型号： | 2SJ555 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel MOS FET |
| 文件： | 总8页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ555
Silicon P Channel MOS FET
REJ03G0902-0300
(Previous: ADE-208-634A)
Rev.3.00
Sep 07, 2005
Description
High speed power switching
Features
•
Low on-resistance
RDS (on) = 0.017 Ω typ.
Low drive current.
4 V gate drive devices.
High speed switching.
•
•
•
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
2
3
S
Rev.3.00 Sep 07, 2005 page 1 of 7
2SJ555
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Value
–60
Unit
V
±20
V
–60
A
Note 1
Drain peak current
ID (pulse)
IDR
–240
–60
A
Body to drain diode reverse drain current
Avalanche current
A
Note 3
IAP
–60
A
Note 3
Avalanche energy
EAR
308
mJ
W
°C
°C
Channel dissipation
Pch Note 2
125
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V (BR) DSS
V (BR) GSS
IDSS
Min
–60
±20
—
Typ
—
Max
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
—
—
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = –1 mA, VDS = –10 V
ID = –30 A, VGS = –10 V Note 4
ID = –30 A, VGS = –4 V Note 4
ID = –30 A, VDS = –10 V Note 4
VDS = –10 V
—
V
—
–10
±10
–2.0
µA
µA
V
IGSS
—
—
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
RDS (on)
|yfs|
–1.0
—
—
0.017 0.022
0.024 0.036
Ω
—
Ω
Forward transfer admittance
Input capacitance
27
—
45
4100
2100
450
32
—
—
—
—
—
—
—
—
—
—
S
Ciss
pF
pF
pF
ns
ns
ns
ns
V
V
GS = 0
f = 1 MHz
GS = –10 V
Output capacitance
Coss
Crss
td (on)
tr
—
Reverse transfer capacitance
Turn-on delay time
—
—
V
ID = –30 A
Rise time
—
270
570
360
–1.1
115
RL = 1 Ω
Turn-off delay time
td (off)
tf
—
Fall time
—
Body to drain diode forward voltage
Body to drain diode reverse recovery time
VDF
—
IF = –60 A, VGS = 0
IF = –60 A, VGS = 0
diF/dt = 50 A/µs
trr
—
ns
Note: 4. Pulse test
Rev.3.00 Sep 07, 2005 page 2 of 7
2SJ555
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–1000
200
150
100
10 µs
–300
–100
–30
–10
–3
–1
Operation in
this area is
limited by RDS (on)
50
0
–0.3
–0.1
Ta = 25°C
0
50
100
150
200
–0.1 –0.3
–1
–3
–10 –30 –100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
–10 V
–100
–80
–60
–40
–20
0
–100
–80
–60
–40
–20
0
–8 V
Pulse Test
VDS = –10 V
Pulse Test
–5 V
–4.5 V
–4 V
–3.5 V
–3 V
25°C
Tc = 75°C
VGS = –2.5 V
–25°C
0
–4
–8
–12
–16
–20
0
–1
–2
–3
–4
–5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
–2.0
100
Pulse Test
Pulse Test
50
–1.6
–1.2
–0.8
–0.4
0
VGS = –4 V
20
10
–10 V
ID = –50 A
5
–5 A
–20 A
–10 A
2
1
0
–4
–8
–12
–16
–20
–1
–3
–10 –30 –100 –300 –1000
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Rev.3.00 Sep 07, 2005 page 3 of 7
2SJ555
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
100
50
Pulse Test
VGS = –4 V
Tc = –25°C
ID = –50 A
30
10
–20 A
40
30
20
10
0
25°C
–10 A
75°C
3
1
–50 A
–10 A, –20 A
–10 V
0.3
0.1
VDS = –10 V
Pulse Test
–40
0
40
80
120
160
–0.1 –0.3
–1
–3
–10 –30 –100
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
50000
VGS = 0
f = 1 MHz
20000
10000
5000
200
100
50
Ciss
2000
1000
500
Coss
Crss
20
10
di / dt = 50 A / µs
GS = 0, Ta = 25°C
200
100
V
–0.1 –0.3
–1
–3
–10 –30 –100
0
–10
–20
–30
–40
–50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
0
–20
1000
500
0
VDD = –10 V
–25 V
–50 V
t
d(off)
–4
t
f
200
100
50
VGS
–40
–8
t
r
VDS
VDD = –50 V
–25 V
–10 V
–60
–12
–16
–20
t
d(on)
–80
20
10
VGS = –10 V, VDD = –30 V
PW = 10 µs, duty ≤ 1 %
ID = –60 A
80
–100
0
160
240
320
400
–0.1 –0.3
–1
–3
–10 –30 –100
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 7
2SJ555
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
–100
–80
–60
–40
–20
0
500
400
300
200
100
0
IAP = –60 A
VDD = –25 V
duty < 0.1 %
Rg ≥ 50 Ω
–10 V
–5 V
VGS = 0
Pulse Test
–1.2 –1.6 –2.0
0
–0.4
–0.8
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 1.0°C/W, Tc = 25°C
PW
T
D =
PDM
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
VDSS
1
2
2
L
EAR
=
• L • IAP •
VDS
Monitor
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
VDD
D.U.T
VDS
ID
Vin
–15 V
50 Ω
VDD
0
Rev.3.00 Sep 07, 2005 page 5 of 7
2SJ555
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
90%
RL
90%
VDD
= –30 V
Vin
–10 V
50 Ω
10%
10%
Vout
t
t
t
t
f
d(on)
r
d(off)
Rev.3.00 Sep 07, 2005 page 6 of 7
2SJ555
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
Package Name
TO-3P / TO-3PV
MASS[Typ.]
5.0g
PRSS0004ZE-A
Unit: mm
4.8 0.2
15.6 0.3
3.2 0.2
φ
1.5
1.6
2.0
1.4 Max
2.8
1.0 0.2
0.6 0.2
0.9
1.0
3.6
5.45 0.5
5.45 0.5
Ordering Information
Part Name
Quantity
Shipping Container
2SJ555-E
360 pcs
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
相关型号：
2SJ557A
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