2SJ386 [RENESAS]
Silicon P Channel MOS FET; 硅P沟道MOS场效应晶体管
| 型号： | 2SJ386 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel MOS FET |
| 文件： | 总6页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ386
Silicon P Channel MOS FET
REJ03G0861-0200
(Previous: ADE-208-1195)
Rev.2.00
Sep 07, 2005
Description
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
1. Source
2. Drain
3. Gate
G
3
2
1
S
Rev.2.00 Sep 07, 2005 page 1 of 5
2SJ386
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Value
Unit
V
–30
±20
V
–3
A
Note 1
Drain peak current
ID (pulse)
–5
–3
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch
Tch
Tstg
A
0.9
W
°C
°C
Channel temperature
150
Storage temperature
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V (BR) DSS
V (BR) GSS
IGSS
Min
–30
±20
—
Typ
—
Max
—
Unit
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
V
V
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –24 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –2 A, VGS = –10 V Note 2
ID = –2 A, VGS = –4 V Note 2
ID = –1 A, VDS = –10 V Note 2
VDS = –10 V
—
—
—
±10
–10
–2.5
0.4
0.8
—
µA
µA
V
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
IDSS
—
—
VGS (off)
RDS (on)
RDS (on)
|yfs|
–1.0
—
—
0.3
0.55
1.7
177
120
59
Ω
—
Ω
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
1.0
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
VGS = 0
Coss
Crss
—
—
f = 1 MHz
—
—
td (on)
—
8
—
ID = –2 A
V
GS = –10 V
tr
—
28
—
RL = 15 Ω
Turn-off delay time
Fall time
td (off)
—
45
—
tf
—
60
—
Note: 2. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 5
2SJ386
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–10
1.6
1.2
0.8
0.4
0
100 µs
1 ms
–3
–1
–0.3
–0.1
Operation in
this area is
limited by RDS (on)
–0.03
–0.01
Ta = 25°C
1 shot pulse
0
50
100
150
200
–0.1 –0.3
–1
–3
–10 –30
–100
Ambient Temperature Ta (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
–5
–4
–3
–2
–1
0
–2.0
–1.6
–1.2
–0.8
–0.4
0
–5 V
–3 V
–4 V
VDS = –10 V
Pulse Test
Ta = 25°C
–3.5 V
Pulse Test
–2.5 V
25°C
Tc = –25°C
75°C
VGS = –2 V
0
–2
–4
–6
–8
–10
0
–1
–2
–3
–4
–5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
–5
10
Ta = 25°C
Pulse Test
Pulse Test
5
–4
–3
–2
–1
0
2
1
VGS = –4 V
0.5
ID = –5 A
–3 A
–1 A
–10 V
0.2
0.1
0
–4
–8
–12
–16
–20
–0.1 –0.2
–0.5 –1 –2
–5 –10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 5
2SJ386
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
10
5
1.0
VDS = –10 V
Pulse Test
Tc = –25°C
Pulse Test
VGS = –4 V
ID = –3 A
0.8
0.6
0.4
0.2
0
–1 A
2
1
25°C
75°C
ID = –5 A
0.5
–1 A
–3 A
–10 V
0.2
0.1
–40
0
40
80
120
160
–0.1 –0.2
–0.5 –1 –2
–5 –10
Ambient Temperature Ta (°C)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
ID = –3 A
0
–10
–20
–30
–40
–50
1000
500
0
VDD = –10 V
–20 V
–30 V
–4
200
100
50
Ciss
–8
VDS
Coss
–12
–16
–20
Crss
VDD = –30 V
–20 V
–10 V
VGS
20
10
VGS = 0
f = 1 MHz
0
–10
–20
–30
–40
–50
0
4
8
12
16
20
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Switching Characteristics
200
100
50
–5
–4
–3
–2
–1
0
Pulse Test
t
f
–
10 V
t
d(off)
–
5 V
20
10
t
r
t
d(on)
VGS = 0
5
VGS = –10 V, VDD = –30 V
PW = 2 µs, duty ≤ 1 %
2
–0.05 –0.1 –0.2 –0.5 –1
0
–0.4
–0.8
–1.2
–1.6
–2.0
–2
–5
Drain Current ID (A)
Source to Drain Voltage VSD (V)
Rev.2.00 Sep 07, 2005 page 4 of 5
2SJ386
Package Dimensions
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Package Name
MASS[Typ.]
0.35g
Unit: mm
TO-92 Mod / TO-92 ModV
4.8 0.4
3.8 0.4
0.65 0.1
0.75 Max
0.60 Max
0.55 Max
0.5 Max
1.27
2.54
Ordering Information
Part Name
Quantity
Shipping Container
2SJ386TZ-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
相关型号：
2SJ387(L)
Power Field-Effect Transistor, 10A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
HITACHI
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