2SD467TZ [RENESAS]
700 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92;
| 型号： | 2SD467TZ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 700 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 晶体 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD467
Silicon NPN Epitaxial
REJ03G0765-0200
(Previous ADE-208-1134)
Rev.2.00
Aug.10.2005
Application
•
•
Low frequency power amplifier
Complementary pair with 2SB561
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
25
20
V
5
0.7
V
A
Collector peak current
Collector power dissipation
Junction temperature
iC(peak)
PC
1.0
A
0.5
W
°C
°C
Tj
150
Storage temperature
Tstg
–55 to +150
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD467
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Min
25
20
5
Typ
—
Max
—
Unit
V
Test conditions
IC = 10 µA, IE = 0
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
—
—
V
ICBO
—
—
1.0
240
µA
1
DC current transfer ratio
hFE
*
85
—
VCE = 1 V, IC = 0.15 A
(Pulse test)
Collector to emitter saturation voltage
Base to emitter voltage
VCE(sat)
VBE
—
—
—
—
0.19
0.76
280
12
0.5
1.0
—
V
V
IC = 0.5 A, IB = 0.05 A
(Pulse test)
VCE = 1 V, IC = 0.15 A
(Pulse test)
Gain bandwidth product
fT
MHz VCE = 1 V, IC = 0.15 A
(Pulse test)
Collector output capacitance
Cob
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
Note: 1. The 2SD467 is grouped by hFE as follows.
B
C
85 to170
120 to 240
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD467
Main Characteristics
Maximum Collector Dissipation Curve
Typical Output Characteristics
500
400
300
200
100
0.6
0.4
0.2
2.5
2.0
1.5
1.0
0.5 mA
IB = 0
0
50
100
150
0
0.4
0.8
1.2
1.6
2.0
Ambient Temperature Ta (°C)
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
VCE = 1 V
5,000
1,000
VCE = 1 V
Pulse
2,000
1,000
500
300
100
Ta = 75°C
25°C
200
100
50
30
10
Ta = 75°C
25°C
20
10
5
3
1
1
3
10
30
100 300 1,000
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
Collector to Emitter Saturation
Voltage vs. Collector Current
Gain Bandwidth Product vs.
Collector Current
0.5
0.4
0.3
0.2
0.1
0
400
300
200
100
0
IC = 10 IB
VCE = 1 V
Ta = 75°C
25°C
1
3
10
30
100 300 1,000
10
20
50 100 200
500 1,000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD467
Collector Output Capacitance vs.
Collector to Base Voltage
500
f = 1 MHz
IE = 0
200
100
50
20
10
5
0.5 1.0
2
5
10
20
50
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD467
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DA-A
Package Name
MASS[Typ.]
0.25g
Unit: mm
TO-92(1) / TO-92(1)V
4.8 0.3
3.8 0.3
0.60 Max
0.55 Max
0.5 Max
1.27
2.54
Ordering Information
Part Name
Quantity
Shipping Container
Hold Box, Radial Taping
2SD467BTZ-E
2SD467CTZ-E
2500
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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