2SD468 [RENESAS]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SD468 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总6页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD468
Silicon NPN Epitaxial
REJ03G0766-0200
(Previous ADE-208-1135)
Rev.2.00
Aug.10.2005
Application
•
•
Low frequency power amplifier
Complementary pair with 2SB562
Outline
RENESAS Packaode: PRSS0003DC-A
(Package namMod)
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Symbo
VCBO
VCEO
VEBO
IC
Unit
V
V
V
A
Collector peak current
Collector power dissipation
Junction temperature
iC(peak)
PC
5
A
0.9
W
°C
°C
Tj
150
Storage temperature
Tstg
–55 to +150
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD468
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Min
25
20
5
Typ
—
Max
—
Unit
V
Test conditions
IC = 10 µA, IE = 0
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 2 V, IC = 0.5 A*2
IC = 0.8 A, IB = 0.08 A*2
VCE = 2 V, IC = 0.5 A*2
—
—
V
ICBO
—
85
—
—
—
—
—
1.0
240
0.5
1.0
—
µA
1
DC current transfer ratio
hFE
*
—
Collector to emitter saturation voltage
Base to emitter voltage
VCE(sat)
VBE
0.2
0.79
190
22
V
V
Gain bandwidth product
fT
MHz VCE = 2 V, IC = 0.5 A*2
Collector output capacitance
Cob
—
pF VCB = 10 V, IE = 0, f = 1 MHz
Notes: 1. The 2SD468 is grouped by hFE as follows.
2. Pulse test
B
C
85 to170
120 to 240
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD468
Main Characteristics
Typical Output Characteristics
Maximum Collector Dissipation Curve
1,000
800
1.2
0.8
0.4
7
6
5
600
400
200
4
3
2
1mA
IB = 0
0
0.4
0.8
1.2
1.4
1.6
0
50
100
150
Ambient TemTa (°C)
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typ
VCE = 2
5,000
1,000
300
100
30
VCE = 2 V
2,000
1,000
Ta =
500
Ta = 75°C
25°C
200
0
10
3
1
0
0.2
0.4
0.6
0.8
1.0
30
100 300 1,000
nt IC (mA)
Base to Emitter Voltage VBE (V)
Collector to Emitter Saturation
Voltage vs. Collector Current
Product vs.
r Current
300
200
100
0
0.25
0.20
0.15
0.10
0.05
0
VCE = 2 V
IC = 10 IB
Ta = 75°C
25°C
10
30
100
300
1,000
1
3
10
30
100 300 1,000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD468
Collector Output Capacitance vs.
Collector to Base Voltage
200
100
50
f = 1 MHz
IE = 0
20
10
5
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD468
Package Dimensions
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Package Name
MASS[Typ.]
0.35g
Unit: mm
TO-92 Mod / TO-92 ModV
4.8 0.4
3.8 0.4
0.65 0.1
0.75 Max
Max
x
0.5 Max
Ordering Information
Part Name
Quantity
pping Container
2SD468BTZ-E
2SD468CTZ-E
2500
Note: For some grades, production may be terminated. Pleafice to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
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Colophon .3.0
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