2SD2213RF [RENESAS]
1500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR;
| 型号： | 2SD2213RF |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 1500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件： | 总6页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2213
Silicon NPN Epitaxial, Darlington
REJ03G0807-0200
(Previous ADE-208-1165)
Rev.2.00
Aug.10.2005
Application
Low frequency power amplifier
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TOod)
2
1. Emitter
2. Collector
3. Base
3
ID
15 kΩ
(Typ)
0.5 Ω
(Typ)
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Symb
VCBO
VCEO
VEBO
IC
Unit
V
V
V
A
Collector peak current
Collector power dissipation
Junction temperature
ic (peak)
PC
A
0.9
150
W
°C
°C
A
Tj
Storage temperature
Tstg
ID
–55 to +150
1.5
E to C diode forward current
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD2213
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
150
80
Typ
—
—
—
—
—
—
—
—
—
—
—
Max
—
Unit
V
Test conditions
IC = 1 mA, IE = 0
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
—
V
IC = 10 mA, RBE = ∞
IE = 50 mA, IC = 0
VCB = 120 V, IE = 0
VCE = 65 V, IE = ∞
VCE = 2 V, IC = 0.15 A*1
VCE = 2 V, IC = 1 A*1
VCE = 2 V, IC = 1.5 A*1
IC = 1 A*1, IB = 1 mA
IC = 1 A*1, IB = 1 mA
ID = 1.5 A*1
8
—
V
—
5.0
5.0
—
µA
µA
ICEO
—
DC current transfer ratio
hFE
2000
5000
1000
—
hFE
30000
—
hFE
Collector to emitter saturation voltage
Base to emitter saturation voltage
E to C diode forward voltage
Note: 1. Pulse test
VCE(sat)
VBE(sat)
VD
1.5
2.0
3.0
V
V
V
—
—
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD2213
Main Characteristics
Maximum Collector Dissipation Curve
Area of Safe Operation
10
1.2
0.8
0.4
iC(peak)
3
1
1 ms
0.3
0.1
Ta = 25°C
1 Shot Pulse
0.03
0.01
0
50
100
150
1
3
10
30
100
Ambient Teme Ta (°C)
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Ty
2
1.6
1.2
0.8
0.4
100,000
30,000
10,000
VCE = 2 V
00
Ta = 25°C
IB = 0
0
1
2
3
4
5
0.3
1.0
3
10
Collector to Emitter Voltage VCE (V)
ent IC (A)
Collector to Emitter Saturation Voltage
vs. Collector Current
10
3
IC/IB = 100
Ta = –25°C
1.0
75°C
25°C
0.3
0.1
0.01 0.03 0.1 0.3
1.0
3
10
Collector Current IC (A)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD2213
Transient Thermal Resistance
300
100
30
10
Ta = 25°C
3
1.0
0.3
1 m
10 m
100 m
1
10
100
1,000
Time t (s)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD2213
Package Dimensions
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Package Name
MASS[Typ.]
0.35g
Unit: mm
TO-92 Mod / TO-92 ModV
4.8 0.4
3.8 0.4
0.65 0.1
0.75 Max
Max
x
0.5 Max
Ordering Information
Part Name
Quantity
pping Container
2SD2213TZ
2500
Note: For some grades, production may be terminated. Ploffice to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
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Colophon .3.0
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