2SD2215A [PANASONIC]

Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type); 硅NPN三重扩散平面型(硅NPN三重扩散平面型)
2SD2215A
型号: 2SD2215A
厂家: PANASONIC    PANASONIC
描述:

Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type)
硅NPN三重扩散平面型(硅NPN三重扩散平面型)

晶体 晶体管 功率双极晶体管 放大器
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中文:  中文翻译
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Power Transistors  
2SD2215, 2SD2215A  
Silicon NPN triple diffusion planar type  
For power amplification  
Unit: mm  
7.0±0.3  
3.0±0.2  
3.5±0.2  
Features  
High collector to base voltage VCBO  
1.1±0.1  
0.85±0.1  
0.4±0.1  
I type package enabling direct soldering of the radiating fin to  
0.75±0.1  
the printed circuit board, etc. of small electronic equipment.  
2.3±0.2  
Absolute Maximum Ratings (T =25˚C)  
C
4.6±0.4  
Parameter  
Symbol  
Ratings  
Unit  
1
2
3
1:Base  
2:Collector  
3:Emitter  
I Type Package  
Collector to  
2SD2215  
2SD2215A  
2SD2215  
350  
400  
VCBO  
V
base voltage  
Collector to  
Unit: mm  
250  
7.0±0.3  
3.5±0.2  
VCEO  
V
2.0±0.2  
3.0±0.2  
0 to 0.15  
emitter voltage 2SD2215A  
Emitter to base voltage  
Peak collector current  
Collector current  
300  
VEBO  
ICP  
5
V
A
A
1.5  
IC  
0.75  
15  
2.5  
Collector power TC=25°C  
PC  
W
0.75±0.1  
0.5 max.  
0.9±0.1  
dissipation  
Ta=25°C  
1.3  
1.1±0.1  
0 to 0.15  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
1
2
3
Tstg  
–55 to +150  
1:Base  
2:Collector  
2.3±0.2  
3:Emitter  
4.6±0.4  
I Type Package (Y)  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICES  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff  
2SD2215  
2SD2215A  
2SD2215  
2SD2215A  
VCE = 350V, VBE = 0  
1
1
1
1
1
mA  
current  
VCE = 400V, VBE = 0  
VCE = 150V, IB = 0  
VCE = 200V, IB = 0  
VEB = 5V, IC = 0  
Collector cutoff  
current  
ICEO  
IEBO  
VCEO  
mA  
mA  
V
Emitter cutoff current  
Collector to emitter 2SD2215  
voltage 2SD2215A  
250  
300  
70  
IC = 30mA, IB = 0  
*
hFE1  
VCE = 10V, IC = 0.3A  
250  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
V
CE = 10V, IC = 1A  
10  
VCE = 10V, IC = 1A  
IC = 1A, IB = 0.2A  
1.5  
1
V
V
Collector to emitter saturation voltage VCE(sat)  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
V
CE = 5V, IC = 0.5A, f = 10MHz  
30  
0.5  
2
MHz  
µs  
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,  
VCC = 50V  
µs  
0.5  
µs  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
70 to 150  
120 to 250  
1
Power Transistors  
2SD2215, 2SD2215A  
PC — Ta  
IC — VCE  
IC — VBE  
20  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
4.0  
TC=25˚C  
VCE=10V  
(1) TC=Ta  
(2) Without heat sink  
(PC=1.3W)  
3.2  
2.4  
1.6  
0.8  
0
(1)  
25˚C  
TC=100˚C  
15  
10  
5
–25˚C  
IB=14mA  
12mA  
10mA  
8mA  
6mA  
4mA  
2mA  
(2)  
0
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
12  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
(
)
( )  
V
( )  
Base to emitter voltage VBE V  
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
VCE(sat) — IC  
hFE — IC  
fT — IC  
10000  
1000  
VCE=10V  
VCE=10V  
IC/IB=10  
f=10MHz  
TC=25˚C  
10  
3000  
300  
100  
TC=100˚C  
3
1
1000  
300  
100  
30  
10  
TC=100˚C  
25˚C  
0.3  
0.1  
–25˚C  
25˚C  
30  
10  
3
1
–25˚C  
0.03  
0.01  
3
1
0.3  
0.1  
0.01  
0.03  
0.1  
0.3  
1
3
0.01 0.03  
0.1  
0.3  
1
3
10  
0.001 0.003 0.01 0.03  
0.1  
0.3  
1
( )  
A
( )  
A
( )  
Collector current IC A  
Collector current IC  
Collector current IC  
Area of safe operation (ASO)  
Rth(t) — t  
10  
1000  
100  
10  
Note: Rth was measured at Ta=25˚C and under natural convection.  
(1) Without heat sink  
Non repetitive pulse  
TC=25˚C  
3
1
(2) With a 50 × 50 × 2mm Al heat sink  
ICP  
IC  
(1)  
(2)  
t=1ms  
10ms  
DC  
0.3  
0.1  
0.03  
0.01  
1
0.003  
0.001  
0.1  
1
3
10  
30  
100 300 1000  
10–3  
10–2  
10–1  
1
10  
102  
103  
104  
( )  
V
( )  
s
Collector to emitter voltage VCE  
Time  
t
2

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