2SD2215Q [PANASONIC]

Power Bipolar Transistor, 0.75A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3;
2SD2215Q
型号: 2SD2215Q
厂家: PANASONIC    PANASONIC
描述:

Power Bipolar Transistor, 0.75A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

放大器 晶体管
文件: 总3页 (文件大小:168K)
中文:  中文翻译
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Power Transistors  
2SD2215, 2SD2215A  
Silicon NPN triple diffusion planar type  
For power amplification  
Unit: mm  
7.0±0.3  
3.0±0.2  
3.5±0.2  
Features  
High collector to base voltage VCBO  
1.1±0.1  
0.85±0.1  
0.4±0.1  
I type package enabling direct soldering of the radiating fin to  
0.75±0.1  
the printed circuit board, etc. of small electronic equipment.  
2.3±0.2  
Absolute Maximum Ratings (T =25˚C)  
C
4.6±0.4  
Parameter  
Symbol  
Ratings  
Unit  
1
2
3
:Base  
ollector  
:Emitter  
I Type Package  
Collector to  
2SD2215  
2SD2215A  
2SD2215  
350  
400  
VCBO  
V
base voltage  
Collector to  
Unit: mm  
250  
7
3.5±0.2  
VCEO  
V
2.2  
3.0±0.2  
0 to 0.15  
emitter voltage 2SD2215A  
Emitter to base voltage  
Peak collector current  
Collector current  
300  
VEBO  
ICP  
5
A
A
1.
IC  
75  
15  
2.5  
Collector power TC=25°C  
PC  
W
0.75±0.1  
0.5 max.  
0.9±0.1  
dissipation  
Ta=25°C  
1.3  
1.1±0.1  
0 to 0.15  
Junction temperature  
Storage temperature  
T
150  
˚C  
˚C  
1
2
Tstg  
–55 to +150  
1:Base  
2:Collector  
2.3±0.2  
3:Emitter  
4.6±0.4  
I Type Package (Y)  
Electrical Characteristics (T =25˚C)  
C
Paramete
Symbol  
CES  
Conditions  
min  
typ  
max  
Unit  
Collectocuoff  
2215  
2SD2215A  
2SD2215  
2215
CE = 350V, VBE 0  
1
1
1
1
1
mA  
current  
VCE = 400V, VBE = 0  
VCE = 15V, IB = 0  
VCE = 200V, IB = 0  
VEB = 5V, IC = 0  
ollector cuoff  
currt  
ICEO  
EBO  
VCEO  
mA  
mA  
V
Emitter cutoff
Collector to emit
voltage 15A  
250  
300  
70  
IC = 30mA, IB = 0  
*
hFE1  
VCE = 10V, IC = 0.3A  
250  
Forward current transfer ratio  
Base to emitter voltage  
hFE2  
VBE  
V
CE = 10V, IC = 1A  
10  
VCE = 10V, IC = 1A  
IC = 1A, IB = 0.2A  
1.5  
1
V
V
Collector to emitter saturation voltage VCE(sat)  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
V
CE = 5V, IC = 0.5A, f = 10MHz  
30  
0.5  
2
MHz  
µs  
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,  
VCC = 50V  
µs  
0.5  
µs  
*hFE1 Rank classification  
Rank  
hFE1  
Q
P
70 to 150  
120 to 250  
1
Power Transistors  
2SD2215, 2SD2215A  
PC — Ta  
IC — VCE  
IC — VBE  
20  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
4.0  
TC=25˚C  
VCE=10V  
(1) TC=Ta  
(2) Without heat sink  
(PC=1.3W)  
3.2  
2.
1.6  
0.8  
0
(1)  
25˚C  
TC=100˚C  
15  
10  
5
–25˚C  
IB=14mA  
12mA  
10mA  
8mA  
6mA  
4mA  
2mA  
(2)  
0
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
0  
0
0.4  
6  
2.0  
2.4  
(
)
( )  
V
(
V
)
Ambient temperature Ta ˚C  
Collector to emitter voltge VC
Base to emge VBE  
VCE(sat) — IC  
FE
fT — IC  
10000  
1000  
VCE=10V  
VCE=10V  
f=10MHz  
TC=25˚C  
IC/IB=10  
10  
3000  
30
100  
TC=100˚C  
3
1
0  
00  
30  
10  
C=100˚C  
25˚C  
0.3  
0.1  
–25˚C  
25˚C  
30  
10  
3
1
–25˚C  
0.03  
0.01  
3
1
0.3  
0.1  
0.01  
.03  
0.1  
1
3
0.00.03  
0.1  
0.3  
1
3
0  
0.001 0.003 0.01 0.03  
0.1  
0.3  
1
(
A
)
( )  
( )  
Collector current IC A  
Colctor cIC  
Collector current IC  
Area of safe operation ASO)  
Rth(t) — t  
10  
1000  
100  
10  
Note: Rth was measured at Ta=25˚C and under natural convection.  
(1) Without heat sink  
ve pul
3
1
(2) With a 50 × 50 × 2mm Al heat sink  
ICP  
IC  
(1)  
(2)  
=1ms  
10ms  
DC  
0.3  
0.1  
0.03  
0.01  
1
0.003  
0.001  
0.1  
1
3
10  
30  
100 300 1000  
10–3  
10–2  
10–1  
1
10  
102  
103  
104  
(
V
)
( )  
t s  
Collector to emitter voltage VCE  
Time  
2
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  

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