2SD1419 [RENESAS]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SD1419 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总6页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1419
Silicon NPN Epitaxial
REJ03G0788-0200
(Previous ADE-208-1150)
Rev.2.00
Aug.10.2005
Application
•
•
Low frequency power amplifier
Complementary pair with 2SB1026
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK R
)
1
2
1. Base
3
2. Collector
3. Emitter
4. Collector (Flange)
4
Note:
Marking is “DE”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Symbol
VCBO
VCEO
Ratings
Unit
120
100
5
1
2
1
V
V
V
A
VEBO
IC
1
iC(peak)
*
A
PC*2
Tj
W
°C
°C
150
–55 to +150
Storage temperature
Tstg
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD1419
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE1
hFE2
VCE(sat)
VBE
Min
120
100
5
Typ
—
—
—
—
—
—
—
—
Max
—
—
Unit
V
V
V
µA
Test conditions
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 100 V, IE = 0
—
—
10
200
—
1
1.5
—
DC current transfer ratio
100
30
—
—
—
VCE = 5 V, IC = 150 mA*1
VCE = 5 V, IC = 500 mA*1
IC = 500 mA, IB = 50 mA*1
VCE = 5 V, IC = 150 mA*1
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Notes: 1. Pulse test
V
V
fT
Cob
140
12
MHz VCE = 5 V, IC = 150 mA*1
—
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD1419
Main Characteristics
Typical Output Characteristics
Maximum Collector Dissipation Curve
1.0
0.8
0.6
0.4
0.2
1.2
0.8
0.4
35
30
25
20
15
10
5
2
1
0.5 mA
IB = 0
50
100
150
0
2
4
6
8
10
0
Ambient Temperature Ta (°C)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
VCE = 5 V
DC Current Transfer Ratio vs. Collector Current
300
500
VCE = 5 V
200
100
50
250
200
150
100
50
C
25
°
5
–25
20
10
5
Ta
= 7
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1
3
10
30
100
300 1,000
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
Saturation Voltage vs. Collector Current
Gain Bandwidth Product vs. Collector Current
240
1.2
0.6
VCE = 5 V
Pulse
200
IC = 10 IB
Pulse
1.0
0.8
0.6
0.4
0.2
0.5
0.4
0.3
0.2
0.1
160
120
80
40
VCE(sat)
0
10
0
0
100 300 1,000
1
3
10
30
30
100
300
1,000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD1419
Collector Output Capacitance vs.
Collector to Base Voltage
200
100
50
f = 1 MHz
IE = 0
20
10
5
2
1
2
5
10 20
50 100
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD1419
Package Dimensions
JEITA Package Code
SC-62
RENESAS Code
Package Name
UPAK / UPAKV
MASS[Typ.]
0.050g
Unit: mm
PLZZ0004CA-A
4.5 0.1
1.8 Max
1.5 0.1
0.44 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Ordering Information
Part Name
Quantity
Shipping Container
φ 178 mm Reel, 12 mm Emboss Taping
2SD1419DETL-E
1000
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
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