2SD1366ABUL [RENESAS]
1000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, UPAK-3;
| 型号： | 2SD1366ABUL |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 1000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, UPAK-3 晶体 小信号双极晶体管 放大器 |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for oporate trademark, logo and
corporate statement, no changes whatsoever have been made to of the document, and
these changes do not constitute any alteration to the contenelf.
Renesas Technology Home Pcom
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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2SD1366
Silicon NPN Epitaxial
ADE-208-1145 (Z)
1st. Edition
Mar. 2001
Application
Low frequency power amplifier
Outline
UPAK
1
2
3
llector
Emitter
4. Collector (Flange)
2SD1366
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
25
VCEO
20
V
VEBO
5
V
IC
1
A
1
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
iC(peak)
PC*2
Tj
*
1.5
A
1
W
°C
°C
150
Tstg
–5
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%.
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 m
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
t conditions
Collector to base breakdown
voltage
V(BR)CBO
25
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V
Collector cutoff current
Emitter cutoff current
DC current transfe
0.1
0.1
240
0.3
µA
µA
VCB = 20 V, IE = 0
VEB = 4 V, IC = 0
—
VCE = 2 V, IC = 0.5 A, Pulse
IC = 0.8 A, IB = 0.08 A, Pulse
Collector to em
voltage
0.15
V
V
Base to emitter satu
voltage
—
0.9
1.0
IC = 0.8 A, IB = 0.08 A, Pulse
Gain bandwidth product
T
—
—
240
22
—
—
MHz
pF
VCE = 2 V, IC = 0.5 A, Pulse
VCB = 10 V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
Note: 1. The 2SD1366 is grouped by hFE as follows.
Mark
AA
AB
hFE
85 to 170
120 to 240
2SD1366
Typical Output Characteristics
Maximum Collector Dissipation Curve
1,000
1.2
0.8
0.4
7
6
5
800
600
400
200
4
3
2
1 mA
= 0
0
0.8
1.2
1.4
1.6
0
50
100
150
tter Voltage VCE (V)
Ambient Temperature Ta (°C)
Ratio
rrent
Typical Transfer Characteristics
VCE = 2 V
1,000
VCE = 2 V
300
100
Ta = 75°C
25°C
Ta = 75°C
25°C
50
30
10
3
20
10
1
5
0
0
1
3
10
30
100 300 1,000
B
Collector Current IC (mA)
2SD1366
Gain Bandwidth Product
vs. Collector Current
Collector to Emitter Saturation
Voltage vs. Collector Current
300
0.25
0.20
0.15
0.10
0.05
VCE = 2 V
IC = 10 I
B
200
100
0
25
Ta = 75°C
0
1
10
300
1,000
3
10
30
100 300 1,000
(mA)
Collector Current IC (mA)
Collector Output
Collector t
200
100
50
5
10
20
50
llector to Base Voltage VCB (V)
2SD1366
Package Dimensions
As of January, 2001
Unit: mm
4.5 ± 0.1
1.5 ± 0.1
0.44 Max
1.8 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
UPAK
—
Conforms
0.050 g
eference value)
2SD1366
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combusntrol, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranitachi particularly
for maximum rating, operating supply voltage range, heat radlation
conditions and other characteristics. Hitachi bears no respwhen used
beyond the guaranteed ranges. Even within the guaranforeseeable
failure rates or failure modes in semiconductor devires such as fail-
safes, so that the equipment incorporating Hitachinjury, fire or other
consequential damage due to operation of the
5. This product is not designed to be radiatio
6. No one is permitted to reproduce or dor part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office fdocument or Hitachi semiconductor
products.
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URL
NorthAmer
Europe
Asia
nductor.hitachi.com/
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apac.hitachi-asia.com
Japan
www.hitachi.co.jp/Sicd/indx.htm
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