2SD1367-A [KEXIN]
NPN Transistors;
| 型号： | 2SD1367-A |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：894K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1367
1.70 0.1
■ Features
● Low frequency power amplifier
● Complementary to 2SB1001
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
20
16
6
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
I
C
2
A
I
CP
3
P
C
1
W
℃
T
J
150
Storage Temperature Range
T
stg
-55 to 150
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
20
16
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 uA， I
Ic= 1 mA，RBE= ∞
= 100 uA， I = 0
CB= 16 V , I = 0
EB= 5V , I =0
E= 0
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.3
1.2
500
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=1 A, I
B
=100mA
=100mA
0.15
0.9
V
C
=1 A, I
B
hFE
V
V
V
CE= 2V, I
CB= 10V, I
CE= 2V, I = 10 mA
C= 0.1 A
100
Collector output capacitance
Transition frequency
C
ob
T
E= 0,f=1MHz
20
pF
f
C
100
MHz
■ Classification of hfe
Type
Range
Marking
2SD1367-A
100-200
BA
2SD1367-B
160-320
BB
2SD1367-C
250-500
BC
1
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SMD Type
Transistors
NPN Transistors
2SD1367
■ Typical Characterisitics
Typical Output Characteristics
Maximum Collector Dissipation Curve
100
1.2
0.8
0.4
0.2
80
60
40
20
0.25
0.2
0.15
0.1
0.05 mA
IB
= 0
6
0
2
4
8
10
0
50
100
150
。
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta ( C)
Typical Transfer Characteristics
Typical Output Characteristics
1,000
2.0
VCE = 2 V
300
100
1.6
1.2
0.8
0.4
。
Ta = 75 C
30
10
25
–25
3
1
IB
0.8
= 0
1.6
0
0.4
1.2
2.0
0
0.2
0.4
0.6
0.8
1.0
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
Saturation Voltage vs. Collector Current
VBE (sat)
10,000
3.0
1.0
30,00
1,000
Pusle
。
V
CE = 2 V
Ta = 75 C 25
0.3
0.1
lC = 10 lB
300
100
–25
0.03
0.01
VCE (sat)
30
10
0.003
1
3
10
30
100 300 1,000
3
10
30
100 300 1,000 3,000
Collector Current IC (mA)
Collector Current IC (mA)
2
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SMD Type
Transistors
NPN Transistors
2SD1367
■ Typical Characterisitics
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
f = 1 MHz
IE = 0
300
100
30
10
0.1
0.3
1.0
3
10
Collector to Base Voltage VCB (V)
3
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相关型号：
2SD1367BATL
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
RENESAS
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