2SD1367-BB [HITACHI]
SMALL SIGNAL TRANSISTOR;
| 型号： | 2SD1367-BB |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | SMALL SIGNAL TRANSISTOR |
| 文件： | 总6页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1367
Silicon NPN Epitaxial
Application
•
•
Low frequency power amplifier
Complementary pair with 2SB1001
Outline
UPAK
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1367
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
20
VCEO
16
V
VEBO
6
V
IC
2
A
1
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
iC(peak)
PC*2
Tj
*
3
A
1
W
°C
°C
150
Tstg
–55 to +150
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%.
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
20
16
6
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
—
V
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
IEBO
hFE*1
—
0.1
0.1
500
0.3
µA
µA
VCB = 16 V, IE = 0
—
VEB = 5 V, IC = 0
100
—
—
VCE = 2 V, IC = 0.1 A, Pulse
IC = 1 A, IB = 0.1 A, Pulse
Collector to emitter saturation VCE(sat)
voltage
0.15
V
V
Base to emitter saturation
voltage
VBE(sat)
—
0.9
1.2
IC = 1 A, IB = 0.1 A, Pulse
Gain bandwidth product
fT
—
—
100
20
—
—
MHz
pF
VCE = 2 V, IC = 10 mA
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: 1. The 2SD1367 is grouped by hFE as follows.
Mark
BA
BB
BC
hFE
100 to 200 160 to 320
250 to 500
2
2SD1367
Typical Output Characteristics
Maximum Collector Dissipation Curve
100
80
60
40
20
1.2
0.8
0.4
0.2
0.25
0.2
0.15
0.1
0.05 mA
IB
= 0
6
0
2
4
8
10
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
VCE = 2 V
Typical Output Characteristics
1,000
2.0
300
100
1.6
1.2
0.8
0.4
Ta = 75°C
25
30
10
–25
3
1
IB
0.8
Collector to Emitter Voltage VCE (V)
= 0
0
0.4
1.2
1.6
2.0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
3
2SD1367
DC Current Transfer Ratio vs.
Collector Current
Saturation Voltage vs. Collector Current
VBE (sat)
10,000
3.0
1.0
30,00
1,000
Pusle
V
CE = 2 V
Ta = 75°C 25
0.3
0.1
lC = 10 lB
300
100
–25
0.03
0.01
VCE (sat)
30
10
1
0.003
3
10
30
100 300 1,000
3
10
30
100 300 1,000 3,000
Collector Current IC (mA)
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
f = 1 MHz
IE = 0
300
100
30
10
0.1
0.3
1.0
3
10
Collector to Base Voltage VCB (V)
4
Unit: mm
4.5 ± 0.1
1.5 ± 0.1
0.44 Max
1.8 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Hitachi Code
JEDEC
UPAK
—
EIAJ
Conforms
Weight (reference value) 0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
相关型号：
2SD1367BATL
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
RENESAS
2SD1367BAUR
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
RENESAS
2SD1367BBTL
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
HITACHI
©2020 ICPDF网 联系我们和版权申明