2SC5754-T2 [RENESAS]
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINIMOLD PACKAGE-4;
| 型号： | 2SC5754-T2 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, THIN, SUPER MINIMOLD PACKAGE-4 放大器 光电二极管 晶体管 |
| 文件： | 总15页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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Notice
1.
2.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
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3.
4.
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“Standard”:
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
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Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5754
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
•
•
•
•
•
•
Ideal for 460 MHz to 2.4 GHz medium output power amplification
PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
High collector efficiency: ηC = 60%
UHS0-HV technology (fT = 25 GHz) adopted
High reliability through use of gold electrodes
Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5754
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
2SC5754-T2
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10008EJ02V0DS (2nd edition)
Date Published March 2003 CP(K)
The mark • shows major revised points.
Printed in Japan
NEC Compound Semiconductor Devices 2001, 2003
2SC5754
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
13
Unit
V
5.0
V
1.5
V
500
mA
mW
°C
°C
P
tot Note
735
Total Power Dissipation
Junction Temperature
Storage Temperature
Tj
150
Tstg
−65 to +150
Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB
THERMAL RESISTANCE
Parameter
Symbol
Rth j-a1
Test Conditions
Ratings
170
Unit
Junction to Ambient Resistance
Mounted on 38 × 38 mm, t = 0.4 mm
°C/W
polyimide PCB
Rth j-a2
Stand alone device in free air
570
°C/W
2
Data Sheet PU10008EJ02V0DS
2SC5754
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
h
VCB = 5 V, IE = 0 mA
VBE = 1 V, IC = 0 mA
= 3 V, I = 100 mA
−
−
−
−
1 000
1 000
100
nA
nA
−
FE Note 1
CE
C
V
40
60
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Available Power Gain
Linear Gain
fT
VCE = 3 V, IC = 100 mA, f = 0.5 GHz
16
5.0
−
20
6.5
−
−
GHz
dB
2
S
21e
V
V
CE
= 3 V, I = 100 mA, f = 2 GHz
C
C
re Note 2
CB
= 3 V, I = 0 mA, f = 1 MHz
E
1.0
1.5
−
pF
MAGNote 3 VCE = 3 V, IC = 100 mA, f = 2 GHz
−
12.0
12.0
dB
VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz,
Pin = 0 dBm, 1/2 Duty
GL
PO (1 dB)
ηC
−
−
dB
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
Gain 1 dB Compression Output Power
Collector Efficiency
−
−
26.0
60
−
−
dBm
%
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
S21
S12
3. MAG =
(K – √ (K2 – 1) )
hFE CLASSIFICATION
Rank
FB
Marking
hFE Value
R57
40 to 100
3
Data Sheet PU10008EJ02V0DS
2SC5754
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2.0
1 000
f = 1 MHz
Mounted on Polyimide PCB
(38 × 38 mm, t = 0.4 mm)
800
735
1.5
1.0
0.5
600
400
Stand alone device
in free air
205
200
0
25
50
75
100
125
(˚C)
150
0
1
2
3
4
5
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1 000
100
10
450
400
350
300
250
200
150
100
50
V
CE = 3 V
I
B
: 0.5 mA step
7 mA
6 mA
5 mA
4 mA
1
3 mA
0.1
0.01
2 mA
1 mA
I
B
= 0.5 mA
5 6
0.001
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
V
CE = 3 V
1
10
100
(mA)
1 000
Collector Current I
C
4
Data Sheet PU10008EJ02V0DS
2SC5754
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
25
20
15
10
5
35
30
25
20
15
10
5
V
CE = 3 V
V
CE = 3 V
IC = 100 mA
f = 0.5 GHz
MSG
MAG
2
|S21e
|
0
0.1
0
1
10
100
(mA)
1 000
1
10
Collector Current I
C
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
15
10
20
15
10
V
CE = 3 V
VCE = 3 V
MSG
MAG
f = 1 GHz
f = 2 GHz
MSG
MAG
2
|S21e
|
2
5
0
5
0
|S21e|
1
10
Collector Current I
100
(mA)
1 000
1
10
100
(mA)
1 000
C
Collector Current I
C
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
15
10
V
CE = 3 V
f = 2.5 GHz
MSG
MAG
5
0
2
|S21e
|
1
10
Collector Current I
100
(mA)
1 000
C
5
Data Sheet PU10008EJ02V0DS
2SC5754
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
η
η
η
η
η
η
30
25
20
15
300
250
200
150
100
50
30
25
20
15
300
250
200
150
100
50
V
CE = 3.2 V, f = 0.9 GHz
V
CE = 3.2 V, f = 2.4 GHz
ICq = 20 mA, 1/2 Duty
ICq = 20 mA, 1/2 Duty
P
out
P
out
I
C
G
P
I
C
G
P
10
5
10
5
η
C
η
C
0
–15
0
15
0
–5
0
25
–10
–5
0
5
10
0
5
10
15
20
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
25
20
15
300
250
200
150
100
50
30
25
20
15
300
250
200
150
100
50
V
CE = 3.2 V, f = 1.8 GHz
V
CE = 3.2 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
ICq = 20 mA, 1/2 Duty
P
out
P
out
I
C
I
C
G
P
G
P
10
5
10
5
η
C
η
C
0
–10
0
20
0
–10
0
20
–5
0
5
10
15
–5
0
5
10
15
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
30
25
20
15
300
250
200
150
100
50
30
25
20
15
300
250
200
150
100
50
V
CE = 3.6 V, f = 1.8 GHz
V
CE = 3.6 V, f = 1.8 GHz
ICq = 4 mA, 1/2 Duty
ICq = 20 mA, 1/2 Duty
P
out
P
out
I
C
I
C
G
P
G
P
10
5
10
5
η
C
η
C
0
–10
0
20
0
–10
0
20
–5
0
5
10
15
–5
0
5
10
15
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10008EJ02V0DS
2SC5754
POWER SUPPLY IMPEDANCE, LOAD IMPEDANCE (Recommended value)
Frequency
f (GHz)
Collector to Emitter Voltage
VCE (V)
Supply Impedance
Load Impedance
ZS (Ω)
ZL (Ω)
0.9
1.8
2.4
2.8 to 3.6
2.8 to 3.6
2.8 to 3.6
8.4 − 5.2 j
6.3 − 16.4 j
5.9 − 22.1 j
15.1 − 4.3 j
15.8 − 6.9 j
15.2 − 17.9 j
Z
L
Z
S
RF input line
GND
B
E
E
C
Z
S
RF output line
GND
Tr.
Z
L
f = 0.9 GHz
f = 1.8 GHz
Z
L
Z
L
Z
S
Z
S
f = 2.4 GHz
Z
L
Z
S
7
Data Sheet PU10008EJ02V0DS
2SC5754
APPLICATION EXAMPLE (Low-cost PA solution)
Bluetooth Power Class 1
f = 2.4 GHz
T80
R57
0 dBm
13 dBm
22 dBm
2SC5509
2SC5754
SS Cordless Phone
f = 2.4 GHz
R57
20 dBm
26 dBm
2SC5754
DCS1800 (GSM1800) Cellular Phone
f = 1.8 GHz
R55
R57
5 dBm
16 dBm
25 dBm
35 dBm
2SC5753
2SC5754
NE5520379A
(MOS FET)
Cordless Phone
f = 0.9 GHz
T H
R57
–3 dBm
9 dBm
25 dBm
2SC5434
2SC5754
(3-pin TUSMM)
8
Data Sheet PU10008EJ02V0DS
2SC5754
EVALUATION CIRCUIT EXAMPLE : 1.8 GHz PA EVALUATION BOARD
PCB Pattern and Element Layout
V
B
V
C
C2
C4
SL1
SL4
C1
C6
RF in
RF out
SL2
SL3 SL5
Remarks 1. 38 × 38 mm, t = 0.4 mm,
= 4.55 double-sided
Tr. (2SC5754)
ε
r
copper-clad polyimide board
2. Back side : GND pattern
3. Solder plating on pattern
4.
: Through holes
Equivalent Circuit
V
B
V
C
C2
C4
SL4
SL5
SL3
C6
RF out
SL1
C1
SL2
C5
RF in
Tr.
C3
Parts List
Parts
C1, C6
C2
Value
Size
Classification
18 pF
Multiplayer ceramic chip capacitor
Multiplayer ceramic chip capacitor
Multiplayer ceramic chip capacitor
Multiplayer ceramic chip capacitor
Multiplayer ceramic chip capacitor
Strip line
3 300 pF
3 pF
C3
C4
15 pF
C5
1.5 pF
SL1, SL4
SL2
w = 0.20 mm
w = 0.76 mm, l = 2.5 mm
w = 0.76 mm, l = 5 mm
w = 0.76 mm, l = 1.5 mm
Strip line
SL3
Strip line
SL5
Strip line
9
Data Sheet PU10008EJ02V0DS
2SC5754
EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
η
η
30
25
20
15
300
250
200
150
100
50
30
25
20
15
300
250
200
150
100
50
V
CE = 3.2 V, f = 1.8 GHz
V
CE = 3.2 V, f = 1.8 GHz
I
Cq = 4 mA, 1/2 Duty
ICq = 20 mA, 1/2 Duty
P
out
P
out
I
C
I
C
G
P
10
5
G
P
10
5
η
C
η
C
0
–10
0
20
0
–10
0
20
–5
0
5
10
15
–5
0
5
10
15
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
η
η
30
25
20
15
300
250
200
150
100
50
30
25
20
15
300
250
200
150
100
50
V
CE = 3.6 V, f = 1.8 GHz
V
CE = 3.6 V, f = 1.8 GHz
I
Cq = 4 mA, 1/2 Duty
ICq = 20 mA, 1/2 Duty
P
out
P
out
I
C
I
C
G
P
G
P
10
5
10
5
η
C
η
C
0
–10
0
20
0
–10
0
20
–5
0
5
10
15
–5
0
5
10
15
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
10
Data Sheet PU10008EJ02V0DS
2SC5754
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
2.05 ± 0.1
1.25 ± 0.1
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
11
Data Sheet PU10008EJ02V0DS
2SC5754
•
The information in this document is current as of March, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
12
Data Sheet PU10008EJ02V0DS
2SC5754
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
NEC Compound Semiconductor Devices Hong Kong Limited
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http://www.ee.nec.de/
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California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302-1
相关型号：
2SC5754-T2FB
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, S Band, Silicon, NPN, THIN, SUPER MINIMOLD PACKAGE-4
NEC
2SC5754-T2FB-A
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, S Band, Silicon, NPN, PLASTIC, THIN, SUPER MINI MOLD PACKAGE-4
NEC
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