2SC5754-T2FB_技术文档

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5754

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

FEATURES

•

Ideal for 460 MHz to 2.4 GHz medium output power amplification

P^{O (1 dB)}= 26.0 dBm TYP. @ V^CE= 3.6 V, f = 1.8 GHz, Pⁱⁿ= 15 dBm

High collector efficiency: η^C= 60%

UHS0-HV technology (f^T= 25 GHz) adopted

High reliability through use of gold electrodes

Flat-lead 4-pin thin-type super minimold (M04) package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5754

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

2SC5754-T2

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10008EJ02V0DS (2nd edition)

Date Published March 2003 CP(K)

The mark • shows major revised points.

Printed in Japan

NEC Compound Semiconductor Devices 2001, 2003

2SC5754

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

13

Unit

V

5.0

V

1.5

V

500

mA

mW

°C

P

tot ^Note

735

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB

THERMAL RESISTANCE

Parameter

Symbol

R^{th j-a}1

Test Conditions

Ratings

170

Unit

Junction to Ambient Resistance

Mounted on 38 × 38 mm, t = 0.4 mm

°C/W

polyimide PCB

R^{th j-a}2

Stand alone device in free air

570

°C/W

2

Data Sheet PU10008EJ02V0DS

2SC5754

ELECTRICAL CHARACTERISTICS (T^A= +25°C)

Parameter

DC Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

I^CBO

I^EBO

h

V^CB= 5 V, I^E= 0 mA

V^BE= 1 V, I^C= 0 mA

= 3 V, I = 100 mA

−

1 000

100

nA

−

FE ^{Note 1}

CE

C

V

40

60

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Reverse Transfer Capacitance

Maximum Available Power Gain

Linear Gain

f^T

V^CE= 3 V, I^C= 100 mA, f = 0.5 GHz

16

5.0

−

20

6.5

−

GHz

dB

2

S

21e

V

CE

= 3 V, I = 100 mA, f = 2 GHz

C

re ^{Note 2}

CB

= 3 V, I = 0 mA, f = 1 MHz

E

1.0

1.5

−

pF

MAG^{Note 3}V^CE= 3 V, I^C= 100 mA, f = 2 GHz

−

12.0

dB

V^CE= 3.6 V, I^Cq= 20 mA, f = 1.8 GHz,

Pⁱⁿ= 0 dBm, 1/2 Duty

G^L

P^{O (1 dB)}

η^C

−

dB

V^CE= 3.6 V, I^Cq= 4 mA, f = 1.8 GHz,

Pⁱⁿ= 15 dBm, 1/2 Duty

Gain 1 dB Compression Output Power

Collector Efficiency

−

26.0

60

−

dBm

%

V^CE= 3.6 V, I^Cq= 4 mA, f = 1.8 GHz,

Pⁱⁿ= 15 dBm, 1/2 Duty

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

S²¹

S¹²

3. MAG =

(K – √ (K²– 1) )

h^FECLASSIFICATION

Rank

FB

Marking

h^FEValue

R57

40 to 100

3

Data Sheet PU10008EJ02V0DS

2SC5754

TYPICAL CHARACTERISTICS (Unless otherwise specified, T^A= +25°C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

2.0

1 000

f = 1 MHz

Mounted on Polyimide PCB

(38 × 38 mm, t = 0.4 mm)

800

735

1.5

1.0

0.5

600

400

Stand alone device

in free air

205

200

0

25

50

75

100

125

(˚C)

150

0

1

2

3

4

5

Ambient Temperature T

A

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

1 000

100

10

450

400

350

300

250

200

150

100

50

V

CE = 3 V

I

B

: 0.5 mA step

7 mA

6 mA

5 mA

4 mA

1

3 mA

0.1

0.01

2 mA

1 mA

I

B

= 0.5 mA

5 6

0.001

0.5

0.6

0.7

0.8

0.9

1.0

0

1

2

3

4

Base to Emitter Voltage VBE (V)

Collector to Emitter Voltage VCE (V)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000

100

10

V

CE = 3 V

1

10

100

(mA)

1 000

Collector Current I

C

4

Data Sheet PU10008EJ02V0DS

2SC5754

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

25

20

15

10

5

35

30

25

20

15

10

5

V

CE = 3 V

V

CE = 3 V

IC = 100 mA

f = 0.5 GHz

MSG

MAG

2

|S21e

|

0

0.1

0

1

10

100

(mA)

1 000

1

10

Collector Current I

C

Frequency f (GHz)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

20

15

10

20

15

10

V

CE = 3 V

VCE = 3 V

MSG

MAG

f = 1 GHz

f = 2 GHz

MSG

MAG

2

|S21e

|

2

5

0

5

0

|S21e|

1

10

Collector Current I

100

(mA)

1 000

1

10

100

(mA)

1 000

C

Collector Current I

C

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

20

15

10

V

CE = 3 V

f = 2.5 GHz

MSG

MAG

5

0

2

|S21e

|

1

10

Collector Current I

100

(mA)

1 000

C

5

Data Sheet PU10008EJ02V0DS

2SC5754

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

η

30

25

20

15

300

250

200

150

100

50

30

25

20

15

300

250

200

150

100

50

V

CE = 3.2 V, f = 0.9 GHz

V

CE = 3.2 V, f = 2.4 GHz

ICq = 20 mA, 1/2 Duty

I^Cq= 20 mA, 1/2 Duty

P

out

P

out

I

C

G

P

I

C

G

P

10

5

10

5

η

C

η

C

0

–15

0

15

0

–5

0

25

–10

–5

0

5

10

0

5

10

15

20

Input Power Pⁱⁿ(dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

30

25

20

15

300

250

200

150

100

50

30

25

20

15

300

250

200

150

100

50

V

CE = 3.2 V, f = 1.8 GHz

V

CE = 3.2 V, f = 1.8 GHz

ICq = 4 mA, 1/2 Duty

I^Cq= 20 mA, 1/2 Duty

P

out

P

out

I

C

I

C

G

P

G

P

10

5

10

5

η

C

η

C

0

–10

0

20

0

–10

0

20

–5

0

5

10

15

–5

0

5

10

15

Input Power Pⁱⁿ(dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

30

25

20

15

300

250

200

150

100

50

30

25

20

15

300

250

200

150

100

50

V

CE = 3.6 V, f = 1.8 GHz

V

CE = 3.6 V, f = 1.8 GHz

ICq = 4 mA, 1/2 Duty

I^Cq= 20 mA, 1/2 Duty

P

out

P

out

I

C

I

C

G

P

G

P

10

5

10

5

η

C

η

C

0

–10

0

20

0

–10

0

20

–5

0

5

10

15

–5

0

5

10

15

Input Power Pⁱⁿ(dBm)

Remark The graphs indicate nominal characteristics.

6

Data Sheet PU10008EJ02V0DS

2SC5754

POWER SUPPLY IMPEDANCE, LOAD IMPEDANCE (Recommended value)

Frequency

f (GHz)

Collector to Emitter Voltage

V^CE(V)

Supply Impedance

Load Impedance

Z^S(Ω)

Z^L(Ω)

0.9

1.8

2.4

2.8 to 3.6

8.4 − 5.2 j

6.3 − 16.4 j

5.9 − 22.1 j

15.1 − 4.3 j

15.8 − 6.9 j

15.2 − 17.9 j

Z

L

Z

S

RF input line

GND

B

E

C

Z

S

RF output line

GND

Tr.

Z

L

f = 0.9 GHz

f = 1.8 GHz

Z

L

Z

L

Z

S

Z

S

f = 2.4 GHz

Z

L

Z

S

7

Data Sheet PU10008EJ02V0DS

2SC5754

APPLICATION EXAMPLE (Low-cost PA solution)

Bluetooth Power Class 1

f = 2.4 GHz

T80

R57

0 dBm

13 dBm

22 dBm

2SC5509

2SC5754

SS Cordless Phone

f = 2.4 GHz

R57

20 dBm

26 dBm

2SC5754

DCS1800 (GSM1800) Cellular Phone

f = 1.8 GHz

R55

R57

5 dBm

16 dBm

25 dBm

35 dBm

2SC5753

2SC5754

NE5520379A

(MOS FET)

Cordless Phone

f = 0.9 GHz

T H

R57

–3 dBm

9 dBm

25 dBm

2SC5434

2SC5754

(3-pin TUSMM)

8

Data Sheet PU10008EJ02V0DS

2SC5754

EVALUATION CIRCUIT EXAMPLE : 1.8 GHz PA EVALUATION BOARD

PCB Pattern and Element Layout

V

B

V

C

C2

C4

SL1

SL4

C1

C6

RF in

RF out

SL2

SL3 SL5

Remarks 1. 38 × 38 mm, t = 0.4 mm,

= 4.55 double-sided

Tr. (2SC5754)

ε

r

copper-clad polyimide board

2. Back side : GND pattern

3. Solder plating on pattern

4.

: Through holes

Equivalent Circuit

V

B

V

C

C2

C4

SL4

SL5

SL3

C6

RF out

SL1

C1

SL2

C5

RF in

Tr.

C3

Parts List

Parts

C1, C6

C2

Value

Size

Classification

18 pF

Multiplayer ceramic chip capacitor

Strip line

3 300 pF

3 pF

C3

C4

15 pF

C5

1.5 pF

SL1, SL4

SL2

w = 0.20 mm

w = 0.76 mm, l = 2.5 mm

w = 0.76 mm, l = 5 mm

w = 0.76 mm, l = 1.5 mm

Strip line

SL3

Strip line

SL5

Strip line

9

Data Sheet PU10008EJ02V0DS

2SC5754

EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

η

30

25

20

15

300

250

200

150

100

50

30

25

20

15

300

250

200

150

100

50

V

CE = 3.2 V, f = 1.8 GHz

V

CE = 3.2 V, f = 1.8 GHz

I

Cq = 4 mA, 1/2 Duty

I^Cq= 20 mA, 1/2 Duty

P

out

P

out

I

C

I

C

G

P

10

5

G

P

10

5

η

C

η

C

0

–10

0

20

0

–10

0

20

–5

0

5

10

15

–5

0

5

10

15

Input Power Pⁱⁿ(dBm)

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

OUTPUT POWER, POWER GAIN,

COLLECTOR CURRENT, COLLECTOR

EFFICIENCY vs. INPUT POWER

η

30

25

20

15

300

250

200

150

100

50

30

25

20

15

300

250

200

150

100

50

V

CE = 3.6 V, f = 1.8 GHz

V

CE = 3.6 V, f = 1.8 GHz

I

Cq = 4 mA, 1/2 Duty

I^Cq= 20 mA, 1/2 Duty

P

out

P

out

I

C

I

C

G

P

G

P

10

5

10

5

η

C

η

C

0

–10

0

20

0

–10

0

20

–5

0

5

10

15

–5

0

5

10

15

Input Power Pⁱⁿ(dBm)

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.csd-nec.com/

10

Data Sheet PU10008EJ02V0DS

2SC5754

PACKAGE DIMENSIONS

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)

2.05 ± 0.1

1.25 ± 0.1

PIN CONNECTIONS

1. Emitter

2. Collector

3. Emitter

4. Base

11

Data Sheet PU10008EJ02V0DS

2SC5754

•

The information in this document is current as of March, 2003. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data

books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products

and/or types are available in every country. Please check with an NEC sales representative for

availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers

agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

risks of damage to property or injury (including death) to persons arising from defects in NEC

semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

NEC semiconductor products are classified into the following three quality grades:

"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

developed based on a customer-designated "quality assurance program" for a specific application. The

recommended applications of a semiconductor product depend on its quality grade, as indicated below.

Customers must check the quality grade of each semiconductor product before using it in a particular

application.

"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not

intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness

to support a given application.

(Note)

(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4-0110

12

Data Sheet PU10008EJ02V0DS

2SC5754

For further information, please contact

NEC Compound Semiconductor Devices, Ltd.

5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com

NEC Compound Semiconductor Devices Hong Kong Limited

Hong Kong Head Office

Taipei Branch Office

Korea Branch Office

TEL: +852-3107-7303

TEL: +886-2-8712-0478 FAX: +886-2-2545-3859

TEL: +82-2-558-2120

FAX: +82-2-558-5209

http://www.ee.nec.de/

TEL: +49-211-6503-01 FAX: +49-211-6503-487

FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk

NEC Electronics (Europe) GmbH

California Eastern Laboratories, Inc.

http://www.cel.com/

TEL: +1-408-988-3500 FAX: +1-408-988-0279

0302-1


型号：	2SC5754-T2FB
厂家：	NEC
描述：	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, S Band, Silicon, NPN, THIN, SUPER MINIMOLD PACKAGE-4 晶体晶体管射频光电二极管输出元件放大器
文件：	总13页 (文件大小：89K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SC5754-T2FB [NEC]

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