2SC2396-E [RENESAS]

SMALL SIGNAL TRANSISTOR, TO-92;
2SC2396-E
型号: 2SC2396-E
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

SMALL SIGNAL TRANSISTOR, TO-92

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To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for oporate trademark, logo and  
corporate statement, no changes whatsoever have been made to of the document, and  
these changes do not constitute any alteration to the contenelf.  
Renesas Technology Home Pcom  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
Cautions  
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2SC2396, 2SC2543, 2SC2544  
Silicon NPN Epitaxial  
ADE-208-1062A (Z)  
2nd. Edition  
Mar. 2001  
Application  
Low frequency amplifier  
Outline  
TO-92 (1)  
tter  
ollector  
. Base  
2SC2396, 2SC2543, 2SC2544  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
2SC2396  
2SC2543  
2SC2544  
120  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
60  
90  
60  
90  
120  
V
5
5
5
V
100  
100  
100  
mA  
mA  
mW  
°C  
°C  
Emitter current  
IE  
–100  
–100  
–100  
400  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
400  
Tj  
150  
150  
150  
Tstg  
–55 to +150  
–55 to +
–55 to +150  
Electrical Characteristics (Ta = 25°C)  
2SC2396  
2SC2543  
Item  
Symbol Min Typ Max Min Unit Test conditions  
Collector to base  
V(BR)CBO 60  
V
V
V
IC = 10 µA, IE = 0  
breakdown voltage  
Collector to emitter  
breakdown voltage  
V(BR)CEO 60  
IC = 1 mA,  
RBE  
=
Emitter to base  
V(BR)EBO  
5
IE = 10 µA, IC = 0  
breakdown voltage  
Collector cutoff current ICBO  
Emitter cutoff current IE
DC current transfer ratio 
.1  
0.1  
0.1  
0.1  
800  
µA  
µA  
VCB = 50 V, IE = 0  
VEB = 2 V, IC = 0  
1200 250  
VCE = 12 V,  
IC = 2 mA  
Collector to emit
saturation voltage  
0.2  
0.2  
V
V
IC = 10 mA,  
IB = 1 mA  
Base to emitter voltage 
90  
3.0  
0.6  
90  
3.0  
0.6  
90  
3.0  
VCE = 12 V,  
IC = 2 mA  
Gain bandwidth product fT  
MHz VCE = 12 V,  
IC = 2 mA  
Collector output  
capacitance  
Cob  
pF  
VCB = 10 V, IE = 0,  
f = 1 MHz  
Note: 1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by hFE1 as follows.  
D
E
F
2SC2396, 2SC2543  
2SC2544  
250 to 500 400 to 800 600 to 1200  
250 to 500 400 to 800  
See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.  
2
2SC2396, 2SC2543, 2SC2544  
Maximum Collector Dissipation Curve  
600  
400  
200  
50  
100  
1
0
Ambient Temperature Ta (°C)  
3
2SC2396, 2SC2543, 2SC2544  
Package Dimensions  
As of January, 2001  
Unit: mm  
4.8 ± 0.4  
3.8 ± 0.4  
0.60 Max  
0.55Max  
Hitachi Code  
JEDEC  
EIAJ  
TO-92 (1)  
Conforms  
Conforms  
0.25 g  
Mass (reference value)  
4
2SC2396, 2SC2543, 2SC2544  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combusntrol, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranitachi particularly  
for maximum rating, operating supply voltage range, heat radlation  
conditions and other characteristics. Hitachi bears no respwhen used  
beyond the guaranteed ranges. Even within the guaranforeseeable  
failure rates or failure modes in semiconductor devires such as fail-  
safes, so that the equipment incorporating Hitachinjury, fire or other  
consequential damage due to operation of the
5. This product is not designed to be radiatio
6. No one is permitted to reproduce or dor part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office fdocument or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor &
Nippon Bldg., 2-6-0004, Japan  
Tel: Tokyo (03) 3270
URL  
NorthAmer
Europe  
Asia  
nductor.hitachi.com/  
.hitachi-eu.com/hel/ecg  
apac.hitachi-asia.com  
Japan  
www.hitachi.co.jp/Sicd/indx.htm  
For further information write
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
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Singapore 049318  
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Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
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Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
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URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
5

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