2SC1921RF [RENESAS]

50mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR;
2SC1921RF
型号: 2SC1921RF
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

50mA, 200V, NPN, Si, SMALL SIGNAL TRANSISTOR

文件: 总6页 (文件大小:161K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC1921  
Silicon NPN Triple Diffused  
REJ03G0695-0200  
(Previous ADE-208-1060)  
Rev.2.00  
Aug.10.2005  
Application  
High frequency high voltage amplifier  
Video output  
Outline  
RENESAS Package code: PRSS0003DC-A  
(Package name: TO-92 Mod)  
Emitter  
llector  
Absolute Maximum Ra
(Ta = 25°C)  
Collector to base vol
Collector to emitter volta
Emitter to base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
250  
200  
V
5
50  
V
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
PC  
600  
Tj  
150  
Storage temperature  
Tstg  
–55 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 5  
2SC1921  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEO  
Min  
250  
200  
5
Typ  
Max  
Unit  
V
Test conditions  
IC = 10 µA, IE = 0  
Collector to base breakdown voltage  
Collector to emitter breakdown voltage  
Emitter to base breakdown voltage  
Collector cutoff current  
V
IC = 1 mA, RBE = ∞  
IE = 10 µA, IC = 0  
V
1.0  
300  
1.0  
µA  
VCE = 120 V, RBE = ∞  
VCE = 6 V, IC = 10 mA  
IC = 10 mA, IB = 1 mA  
DC current transfer ratio  
hFE  
30  
Collector to emitter saturation voltage  
Gain bandwidth product  
VCE(sat)  
fT  
V
60  
130  
3
MHz VCE = 6 V, IC = 10 mA  
pF VCB = 6 V, IE = 0, f = 1 MHz  
Collector output capacitance  
Cob  
4
Rev.2.00 Aug 10, 2005 page 2 of 5  
2SC1921  
Main Characteristics  
Maximum Collector Dissipation Curve  
Typical Output Characteristics  
20  
16  
12  
8
600  
400  
200  
200  
180  
160  
140  
120  
100  
80  
60  
40  
4
20 µA  
IB = 0  
0
50  
100  
150  
0
4
8
12  
16  
20  
Collecmitter Voltage VCE (V)  
Ambient Temperature Ta (°C)  
uration Voltage vs.  
ent  
Typical Transfer Characteristics  
50  
Ta = 75°C  
25  
–25  
20  
10  
5
Ta =  
75  
°
C
0.1  
0
2
1
0.4  
0.5  
0.
1
2
5
10  
20  
50  
Collector Current IC (mA)  
Base to
Gain
Co
DC Current Transfer Ratio vs.  
Collector Current  
200  
100  
50  
120  
100  
80  
Ta = 75°C  
25  
–25  
60  
VCE = 6 V  
20  
10  
40  
VCE = 6 V  
20  
1
2
5
10  
20  
1
2
5
10  
20  
50  
Collector Current IC (mA)  
Collector Current IC (mA)  
Rev.2.00 Aug 10, 2005 page 3 of 5  
2SC1921  
Collector Output Capacitance vs.  
Collector to Base Voltage  
20  
10  
5
f = 1 MHz  
IE = 0  
2
1.0  
0.5  
0.2  
2
5
10  
20  
50 100 200  
Collector to Base Voltage VCB (V)  
Rev.2.00 Aug 10, 2005 page 4 of 5  
2SC1921  
Package Dimensions  
JEITA Package Code  
SC-51  
RENESAS Code  
PRSS0003DC-A  
Package Name  
MASS[Typ.]  
0.35g  
Unit: mm  
TO-92 Mod / TO-92 ModV  
4.8 0.4  
3.8 0.4  
0.65 0.1  
0.75 Max  
0.60 Max  
0.55 Max  
0.5 Max  
1.27  
2.54  
Ordering Information  
Part Name  
Shipping Container  
ox, Radial Taping  
2SC1921TZ-E  
2500  
Note: For some grades, prode contact the Renesas sales office to check the state of  
production before or
Rev.2.00 Aug 10, 2005 page 5 of 5  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technouct best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belochnology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-parthe use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and on on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without nr other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Rutor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other l
Please also pay attention to information published by Renesas Technology Corp. by vagy Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including progorithms, please be sure to  
evaluate all information as a total system before making a final decision on the aenesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the inform
5. Renesas Technology Corp. semiconductors are not designed or manufacturnder circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an auistributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus ol, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessarese materials.  
7. If these products or technologies are subject to the Japanese expunder a license from the Japanese government and  
cannot be imported into a country other than the approved dest
Any diversion or reexport contrary to the export control laws adestination is prohibited.  
8. Please contact Renesas Technology Corp. for further detaied therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/ormation.  
Renesas Technology America
450 Holger Way, San Jose, C
Tel: <1> (408) 382-7500, F
Renesas Technology
Dukes Meadow, Millboare, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100
Renesas Technology Hong K
7th Floor, North Tower, World Finur City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852>
Renesas Technology Taiwan Co., Ltd
10th Floor, No.99, Fushing North Road, Tei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  

相关型号:

2SC1921RR

Small Signal Bipolar Transistor, 0.05A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
HITACHI

2SC1921TZ

Small Signal Bipolar Transistor, 0.05A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92MOD, 3 PIN
HITACHI

2SC1921TZ-E

Silicon NPN Triple Diffused
RENESAS

2SC1922

Silicon NPN Power Transistors
ISC

2SC1922

Silicon NPN Power Transistors
SAVANTIC

2SC1922

Silicon NPN Power Transistors
JMNIC

2SC1922

Power Bipolar Transistor, 2.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
CDIL

2SC1922_15

Silicon NPN Power Transistors
JMNIC

2SC1922_2014

Silicon NPN Power Transistors
JMNIC

2SC1923

TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS)
TOSHIBA

2SC1923

NPN Plastic Encapsulated Transistor
SECOS

2SC1923

TRANSISTOR TRANSISTOR,BJT,NPN,30V V(BR)CEO,20MA I(C),TO-92, BIP General Purpose Small Signal
ONSEMI