2SC1922 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC1922 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1922
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High speed switching
APPLICATIONS
·For TV horizontal output applications
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
800
UNIT
V
Open emitter
Open base
V
Open collector
6
V
2.5
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
Tstg
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-C
Thermal resistance from junction to case
2.5
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1922
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
800
6
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ; IB=0
Emitter-base breakdown voltage
IE=1mA ; IC=0
V
Collector-emitter saturation voltage IC=2A; IB=0.6A
5.0
1.5
10
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=2A; IB=0.6A
VCB=600V; IE=0
VEB=5V; IC=0
V
μA
μA
IEBO
10
hFE
IC=0.5A ; VCE=5V
8
40
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1922
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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