2SA1648M-Z-T1 [RENESAS]
2SA1648M-Z-T1;
| 型号： | 2SA1648M-Z-T1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 2SA1648M-Z-T1 |
| 文件： | 总7页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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DATA SHEET
SILICON POWER TRANSISTOR
2SA1648,1648-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DESCRIPTION
PACKAGE DRAWINGS (Unit: mm)
The 2SA1648 is a mold power transistor developed for high-speed
switching and features a very low collector-to-emitter saturation
voltage.
2.3 ±0.2
0.5 ±0.1
6.5 ±0.2
5.0 ±0.2
4
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
1
2
3
FEATURES
1.1 ±0.2
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
0.5 +−00..12
0.5 +−00..21
• Mold package that does not require an insulating board or
insulation bushing.
2.3 2.3
• Low collector saturation voltage:
VCE(sat)1 = −0.3 V MAX. (IC = −3.0 A)
• Fast switching speed:
TO-251 (MP-3)
tf = 0.3 μs MAX. (IC = −3.0 A)
<R>
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
• High DC current gain and excellent linearity
2.3 ±0.2
0.5 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Note
Note
4
Parameter
Collector to base voltage
Collector to emitter voltage
Base to emitter voltage
Collector current (DC)
Symbol
VCBO
Ratings
Unit
V
−100
1
2 3
VCEO
−60
V
VEBO
−7.0
V
0.5 ±0.1
2.3 ±0.3
0.5 ±0.1
IC(DC)
−5.0
−10
A
2.3 ±0.3
0.15 ±0.15
Note 1
Collector current (pulse)
Base current (DC)
IC(pulse)
IB(DC)
A
ELECTRODE CONNECTION
−2.5
A
Total power dissipation (Tc = 25°C)
Total power dissipation (TA = 25°C)
Junction temperature
PT
PT
Tj
18
W
W
°C
°C
1. Base
2. Collector
3. Emitter
1.0Note 2, 2.0Note 3
TO-252 (MP-3Z)
150
4. Collector Fin
Storage temperature
Tstg
−55 to +150
Note The depth of notch at the top of the fin is
Notes 1. PW ≤ 300 μs, Duty Cycle ≤ 10%
2. Printing board mounted
from 0 to 0.2 mm.
3. 7.5 cm2 × 0.7 mm ceramic board mounted
<R>
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16121EJ4V0DS00 (4th edition)
Date Published June 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SA1648,1648-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
VCEO(SUS)
VCEX(SUS)
Conditions
MIN.
−60
−60
TYP.
MAX.
Unit
V
Collector to emitter voltage
Collector to emitter voltage
IC = −3.0 A, IB = −0.3 A, L = 1 mH
IC = −3.0 A, IB2 = −IB1 = −0.3 A,
V
VBE(OFF) = 1.5 V, L = 180 μH, clamped
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
ICBO
ICER
VCE = −60 V, IE = 0 A
−10
−1.0
−10
μA
mA
μA
VCE = −60 V, RBE = 50 Ω, TA = 125°C
VCE = −60 V, VBE(OFF) = 1.5 V
ICEX1
ICEX2
VCE = −60 V, VBE(OFF) = 1.5 V,
TA = 125°C
−1.0
mA
Emitter cutoff current
DC current gain
IEBO
VEB = −5.0 V, IC = 0 A
−10
μA
Note
hFE1
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −3.0 A
IC = −3.0 A, IB = −0.15 A
IC = −4.0 A, IB = −0.2 A
IC = −3.0 A, IB = −0.15 A
IC = −4.0 A, IB = −0.2 A
VCB = −10 V, IE = 0 A, f = 1.0 MHz
VCE = −10 V, IC = 0.5 A
100
100
60
Note
hFE2
DC current gain
200
400
Note
hFE3
DC current gain
Note
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
VCE(sat)1
−0.3
−0.5
−1.2
−1.5
V
V
Note
VCE(sat)2
Note
VBE(sat)1
V
Note
VBE(sat)2
V
Cob
fT
80
90
pF
MHz
μs
μs
μs
ton
tstg
tf
IC = −3.0 A, RL = 17 Ω,
IB1 = −IB2 = −0.15 A, VCC ≅ −50 V
Refer to SWITCHING TIME TEST
CIRCUIT.
0.3
1.5
0.3
Storage time
Fall time
Note Pulse test PW ≤ 350 μs, Duty Cycle ≤ 2%/Pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
RL = 17 Ω
Base current
waveform
I
B2
B1
I
C
V
IN
I
I
I
B1
B2
V
CC ≅ −50 V
TUT
Collector current
waveform
10%
90%
IC
PW
PW ≅ 50
μs
VBB ≅ 5 V
Duty Cycle ≤ 2%
ton
tstg
tf
2
Data Sheet D16121EJ4V0DS
2SA1648,1648-Z
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING CURVE OF
SAFE OPERATING AREA
18
15
12
9
100
80
60
40
20
6
3
0
25
50
75
100 125 150 175
0
25
50
75
100
125
150
Case Temperature TC (°C)
Case Temperature TC (°C)
FORWARD BIAS SAFE OPERATING AREA
TRANSIENT THERMAL RESISTANCE
= 25°C
1000
100
10
TC
TC = 25°C
Single pulse
Single pulse
I
C(pulse)
C(DC)
−10
−1.0
−0.1
Rth(j−A) = 125 °C/W
I
Rth(j−C) = 6.94 °C/W
1.0
0.1
1 m 10 m 100 m
1
10
100 1000 10000
−1.0
−10
−100
Collector to Emitter Voltage VCE (V)
Pulse Width PW (s)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
10000
1000
100
10
−5
−4
−3
−2
−1
−20 mA
VCE = −2.0 V
Pulse test
−16 mA
−12 mA
−8 mA
−4 mA
I
B
= −2 mA
1
−0.01
−0.1
−1
−10
−100
0
−1
−2
−3
−4
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
3
Data Sheet D16121EJ4V0DS
2SA1648,1648-Z
BASE AND COLLECTOR SATURATION VOLTAGE
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
1000
100
10
−10
I
C
= 20 A
•
I
B
VCE = −10 V
TC = 25°C
Pulse test
−1
V
BE (sat)
−0.1
V
CE (sat)
−0.01
−0.001
1
−0.01
−0.1
−1
−10
−0.01
−0.1
−1
−10
−100
Collector Current IC (A)
Collector Current IC (A)
OUTPUT CAPACITANCE vs.
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR TO BASE VOLTAGE
1000
100
10
IE = 0 A
f = 1.0 MHz
−3
−2
−1
0
−20
−40
−60
−80
−100
−0.1
−1
−10
−100
Collector to Base Voltage VCB (V)
Collector to Emitter Voltage VCE (V)
STORAGE TIME AND FALL TIME
vs. COLLECTOR CURRENT
I
C
= 20 A • IB1 = −20 A • IB2
tstg
μ
1
μ
0.1
tf
0.01
−0.5
−1
−2
−5
−10
−20
4
Data Sheet D16121EJ4V0DS
2SA1648,1648-Z
•
The information in this document is current as of June, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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