2SA1649-Z-AZ [NEC]
Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MP-3Z, 3 PIN;
| 型号： | 2SA1649-Z-AZ |
| 厂家： | 
NEC |
| 描述： | Small Signal Bipolar Transistor, 0.01A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MP-3Z, 3 PIN |
| 文件： | 总6页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON POWER TRANSISTOR
2SA1649, 2SA1649-Z
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
PACKAGE DRAWING (UNIT: mm)
The 2SA1649 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
VCE(sat) = −0.3 V MAX. (@IC = −3 A)
• Fast switching speed:
tf = 0.3 µs MAX. (@IC = −3 A)
• High DC current amplifiers and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
−40
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
VCBO
−30
VCEO
V
−7.0
VEBO
IC(DC)
V
−10
A
−20
IC(pulse)*
A
ꢀꢁꢂꢃꢄꢅꢆꢇꢂꢈꢉꢆꢊꢊꢂꢃꢄꢋꢆꢊ
ꢌꢍꢈꢎꢏꢐꢂ
ꢑꢍꢈꢉꢆꢁꢁꢂꢃꢄꢆꢅ
ꢒꢍꢈꢀꢓꢋꢄꢄꢂꢅ
ꢔꢍꢈꢕꢋꢊꢈꢖꢃꢆꢁꢁꢂꢃꢄꢆꢅꢗ
−3.5
IB(DC)
A
PT (Tc = 25 °C)
PT (Ta = 25 °C)
Tj
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
15
W
W
°C
°C
1.0**, 2.0***
150
−55 to +150
Tstg
*: PW ≤ 300 µs, duty cycle ≤ 10%
**: Printing board mounted
***: 7.5 mm2 × 0.7 mm ceramic board mounted
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15588EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SA1649, 2SA1649-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
VCEO(SUS)
VCEX(SUS)
Conditions
MIN.
−30
−40
TYP.
MAX.
Unit
V
IC = −4.0 A, IB = −0.4 A, L = 1 mH
Collector to emitter voltage
Collector to emitter voltage
IC = −4.0 A, IB2 = −IB1 = −0.4 A,
V
VBE(OFF) = 1.5 V, L = 180 µH, clamped
VCE = −30 V, IE = 0
−10
−1.0
−10
µA
mA
µA
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
ICBO
ICER
ICEX1
ICEX2
VCE = −30 V, RBE = 50 Ω, Ta = 125°C
VCE = −30 V, VBE(OFF) = 1.5 V
VCE = −30 V, VBE(OFF) = 1.5 V,
Ta = 125°C
−1.0
mA
VEB = −5.0 V, IC = 0
−10
µA
−
Emitter cutoff current
DC current gain
IEBO
hFE1*
hFE2*
hFE3*
VCE(sat)1*
VCE(sat)2*
VBE(sat)1*
VBE(sat)2*
Cob
VCE = −2.0 V, IC = −0.5 A
VCE = −2.0 V, IC = −2.0 A
VCE = −2.0 V, IC = −4.0 A
IC = −3.0 A, IB = −0.2 A
IC = −4.0 A, IB = −0.3 A
IC = −3.0 A, IB = −0.2 A
IC = −4.0 A, IB = −0.3 A
VCB = −10 V, IE = 0, f = 1.0 MHz
VCE = −10 V, IC = −0.5 A
100
100
60
−
DC current gain
200
400
−
DC current gain
−0.3
−0.5
−1.2
−1.5
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
V
V
V
V
250
120
pF
MHz
µs
µs
µs
fT
IC = −4.0 A, RL = 5 Ω,
IB1 = −IB2 = −0.15 A, VCC ≅ −20 V
Refer to the test circuit.
ton
0.3
1.5
0.3
Storage time
tstg
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pulsed
hꢀꢁ CLASSIFICATION
Marking
hFE2
M
L
K
100 to 200
150 to 300
200 to 400
SWITCHING TIME (tꢂꢃ, tꢄꢅꢆ, tꢇ) TEST CIRCUIT
ꢀꢁꢂꢃꢄꢅꢆꢇꢇꢃꢈꢉ
ꢊꢁꢋꢃꢌꢍꢇꢎ
ꢏꢍꢐꢐꢃꢅꢉꢍꢇꢄꢅꢆꢇꢇꢃꢈꢉ
ꢊꢁꢋꢃꢌꢍꢇꢎ
2
Data Sheet D15588EJ2V0DS
2SA1649, 2SA1649-Z
TYPICAL CHARACTERISTICS (Ta = 25°C)
3
Data Sheet D15588EJ2V0DS
2SA1649, 2SA1649-Z
4
Data Sheet D15588EJ2V0DS
2SA1649, 2SA1649-Z
[MEMO]
5
Data Sheet D15588EJ2V0DS
2SA1649, 2SA1649-Z
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
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•
•
•
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M8E 00. 4
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