Toggle navigation
首页
加载中...
马上查询
×
马上查询
关闭背景特效
首页
|
元器件品牌
2N6796TXV
[RENESAS]
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF;
元器件型号：
2N6796TXV
生产厂家：
RENESAS TECHNOLOGY CORP
描述和应用：
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
开关 脉冲 晶体管
PDF文件：
总5页 (文件大小：142K)
下载文档：
下载PDF数据表文档文件
型号参数：2N6796TXV参数
查看货源
2N6796U
N-Channel
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
46
ETC
2N6796U
N-CHANNEL MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
19
MICROSEMI
2N6796U
N-CHANNEL MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
32
MICROSEMI
2N6797
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-39
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
19
ETC
2N6798
100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
72
ETC
2N6798
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
182
SEME-LAB
2N6798
N-CHANNEL MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
32
MICROSEMI
2N6798
N-CHANNEL MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
45
MICROSEMI
2N6798
100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
70
ETC
2N6798_10
N-CHANNEL MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
15
MICROSEMI
2N6798E
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
2
IRF
2N6798EA
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
1
IRF
2N6798EB
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
2
IRF
2N6798EBPBF
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
2N6798ED
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
©2020 ICPDF网
联系我们和版权申明
RENESAS TECHNOLOGY CORP 
