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元器件品牌
2N6796U
[ETC]
N-Channel ; N沟道\n
元器件型号：
2N6796U
生产厂家：
ETC
描述和应用：
N-Channel
N沟道\n
PDF文件：
总2页 (文件大小：21K)
下载文档：
下载PDF数据表文档文件
型号参数：2N6796U参数
查看货源
2N6797
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-39
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19
ETC
2N6798
100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor
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72
ETC
2N6798
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
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182
SEME-LAB
2N6798
N-CHANNEL MOSFET
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32
MICROSEMI
2N6798
N-CHANNEL MOSFET
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45
MICROSEMI
2N6798
100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor
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70
ETC
2N6798_10
N-CHANNEL MOSFET
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15
MICROSEMI
2N6798E
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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2
IRF
2N6798EA
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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156
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1
IRF
2N6798EB
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
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2
IRF
2N6798EBPBF
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Warning
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156
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0
IRF
2N6798ED
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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0
IRF
2N6798SCC5205/019
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
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156
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1
IRF
2N6798TX
5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
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0
RENESAS
2N6798TXV
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Warning
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156
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1
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