EDB107 [RECTRON]
Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, PLASTIC, DB-1, 4 PIN;
| 型号： | EDB107 |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, PLASTIC, DB-1, 4 PIN 光电二极管 |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDB101
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EDB107
GLASS PASSIVATED SUPER FAST
SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
FEATURES
* Good for automatic insertion
* Surge overloading rating - 30 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
DB-1
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
(
)
)
.255 6.5
MECHANICAL DATA
(
.245 6.2
* UL listed the recognized component directory, file #94233
* Epoxy: Device has UL flammability classification 94V-O
(
)
)
.350 8.9
(
.300 7.6
(8.51)
(8.12)
.335
.320
(
)
.135 3.4
(
)
.115 2.9
(
)
)
.165 4.2
.020
(
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.155 3.9
(
)
0.5
.060
(
)
)
.205 5.2
(
)
1.5
(
.195 5.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA
= 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
SYMBOL
UNITS
EDB102 EDB103 EDB104 EDB105 EDB106 EDB107
EDB101
Volts
Volts
Volts
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
V
V
RRM
RMS
Maximum DC Blocking Voltage
Maximum Average Forward Current
100
V
DC
1.0
30
Amps
I
O
at TA
= 55oC
Peak Forward Surge Current IFM (surge):8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Amps
pF
I
FSM
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
CJ
15
10
R θ J A
R θ J L
38
12
0C/W
0 C
(Note 3)
Operating and Storage Temperature Range
-55 to + 150
TJ, TSTG
CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (At T
A
= 25oC unless otherwise noted)
SYMBOL
UNITS
Volts
EDB103 EDB104 EDB105 EDB106 EDB107
1.05 1.35 1.70
EDB101 EDB102
Maximum Forward Voltage at 1.0A DC
V
F
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
@T
A
A
= 25oC
=100oC
5.0
100
50
I
R
uAmps
nSec
Maximum Reverse Recovery Time (Note 1)
NOTES : 1.Test Conditions: I =0.5A, I =-1.0A, IRR=-0.25A.
2.Measured at 1 MH and applied reverse voltage of 4.0 volts.
3.Mounted on P.C.B.with 0.5x0.5” (13x13mm) copper pads.
trr
F
R
2004-12
REV.A
Z
(
)
RATING AND CHARACTERISTIC CURVES EDB101 THRU EDB107
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
trr
NONINDUCTIVE
2.0
1.0
0
+0.5A
Single Phase
Half Wave 60Hz
Resistive or
( - )
PULSE
GENERATOR
(NOTE 2)
D.U.T
Inductive Load
( + )
0
25 Vdc
(approx)
( - )
-0.25A
1
OSCILLOSCOPE
(NOTE 1)
( + )
NON-
INDUCTIVE
-1.0A
0
25 50 75 100 125150175
1cm
1
Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
NOTES:
SET TIME BASE FOR
10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
100
10
T
= 150
= 100
J
1.0
EDB107
EDB105~EDB106
T
J
EDB101~EDB104
.1
1.0
.1
T = 25
J
T
= 25
J
.01
Pulse Width = 300uS
1% Duty Cycle
.001
.01
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
0
20
40
60
80
100
120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
30
8.3ms Single Half Sine-Wave
60
40
(JEDEC Method)
25
20
15
10
20
EDB101~EDB104
10
6
T
= 25
EDB105~EDB107
J
4
5
0
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
1
2
5
10
20
50
100
REVERSE VOLTAGE, ( V )
NUMBER OF CYCLES AT 60Hz
RECTRON
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