EDB107-C [RECTRON]

Bridge Rectifier Diode,;
EDB107-C
型号: EDB107-C
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

Bridge Rectifier Diode,

光电二极管
文件: 总6页 (文件大小:61K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EDB101  
THRU  
EDB107  
GLASS PASSIVATED SUPER FAST  
SILICON SURFACE MOUNT BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere  
FEATURES  
* Good for automatic insertion  
* Surge overload rating - 30 amperes peak  
* Ideal for printed circuit board  
* Reliable low cost construction utilizing molded  
* Glass passivated device  
* Polarity symbols molded on body  
* Mounting position: Any  
DB-1  
* Weight: 1.0 gram  
.255 ( 6.5 )  
.245 ( 6.2 )  
MECHANICAL DATA  
.350 ( 8.9 )  
.300 ( 7.6 )  
* UL listed the recongnized component directory,file #94233  
* Epoxy: Device has UL flammability classification 94V-O  
.346 ( 8.8 )  
.307 ( 7.8 )  
.135 ( 3.4 )  
.115 ( 2.9 )  
.165 ( 4.2 )  
.155 ( 3.9 )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
.020  
( 0.5 )  
.060  
( 1.5 )  
resistive or inductive load.  
.205 ( 5.2 )  
.195 ( 5.0 )  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T = 25oC unless otherwise noted)  
A
RATINGS  
SYMBOL  
VRRM  
EDB101  
50  
EDB102  
100  
EDB103  
150  
EDB104  
200  
EDB105  
300  
EDB106 EDB107 UNITS  
400  
280  
400  
600  
420  
600  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
VRMS  
35  
50  
70  
105  
150  
140  
200  
210  
300  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
VDC  
IO  
100  
Volts  
Maximum Average Forward Output Current at T = 55oC  
A
1.0  
30  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
Amps  
Typical Current Squarad Time  
I2  
t
3.7  
38  
A2/Sec  
0C/W  
R
Q
J A  
Typical Thermal Resistance (Note 3)  
R
12  
Q
J L  
pF  
0 C  
Typical Junction Capacitance (Note 2)  
C
15  
10  
J
Operating and Storage Temperature Range  
T
J,  
T
STG  
-55 to + 150  
ELECTRICAL CHARACTERISTICS (At T = 25oC unless otherwise noted)  
A
CHARACTERISTICS  
SYMBOL  
VF  
UNITS  
Volts  
EDB101  
EDB102  
EDB103  
EDB104  
EDB105  
EDB106 EDB107  
1.70  
1.05  
1.35  
Maximum Forward Voltage at 1.0A DC  
@TA = 25oC  
@TA = 100oC  
uAmps  
Maximum Reverse Current at Rated  
5.0  
100  
50  
IR  
DC Blocking Voltage per element  
uAmps  
nSec  
Maximum Reverse Recovery Time (Note 1)  
trr  
Note: 1.Test Conditions: I =0.5A,I =-1.0A,I =-0.25A.  
RR  
2016-04  
REV:D  
F
R
2.Measured at 1MHz and applied reverse voltage of 4.0 volts.  
3.Thermal Resistance : Mounted on PCB.  
RATING AND CHARACTERISTICS CURVES ( EDB101 THRU EDB107 )  
trr  
+0.5A  
50 7  
NONINDUCTIVE  
10 7  
NONINDUCTIVE  
( - )  
PULSE  
GENERATOR  
(NOTE 2)  
D.U.T  
0
( + )  
25 Vdc  
(approx)  
( - )  
-0.25A  
1
( + )  
OSCILLOSCOPE  
(NOTE 1)  
NON-  
INDUCTIVE  
NOTES: 1 Rise Time = 7ns max. Input Impedance =  
1 megohm. 22pF.  
-1.0A  
2. Rise Time = 10ns max. Source Impedance =  
50 ohms.  
1cm  
SET TIME BASE FOR 10 ns/cm  
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACCTERRISTIC  
2.0  
1000  
100  
T
= 100 OC  
A
T
= 75 OC  
A
1.0  
10  
T
= 25 OC  
A
1.0  
Single Phase  
Half Wave 60Hz  
Resistive or  
Inductive Load  
0
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0
20  
40  
60  
80  
100  
120  
140  
LEAD TEMPERATURE, (OC)  
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)  
FIG.2 TYPICAL FORWARRD CURRENT  
DERATING CURVE  
FIG.3 TYPICAL REVERRSE  
CHARRACTERISTICS  
RATING AND CHARACTERISTICS CURVES ( EDB101 THRU EDB107 )  
35  
30  
25  
20  
100  
10  
8.3ms Single Half Sine-Wave  
(JEDED Method)  
T
= 25 OC  
J
1.0  
15  
10  
0.1  
5
0
Pulse Width=300MS  
1% Duty Cycle  
0.01  
1
2
5
10  
20  
50  
100  
1.6  
INSTANTANEOUS FORWARD VOLTAGE, (V)  
0
0.4  
0.8  
1.2  
2.0  
2.4  
2.8  
3.2  
3.6  
NUMBER OF CYCLES AT 60Hz  
FIG.4 TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG.5 MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
200  
100  
60  
40  
20  
10  
6
4
= 25 OC  
0.4  
2
T
J
1
0.1  
2.0  
4
10  
20  
40  
100  
0.2  
REVERSE VOLTAGE, (V)  
FIG.6 TYPICAL JUNCTION CAPACITANCE  
Marking Description  
-
+
Rectron Logo  
Voltage-code  
Part No.  
E D B 1 0 X  
V Y W W  
1-------50V  
5-------300V  
6-------400V  
7-------600V  
~
~
2-------100V  
3-------150V  
4-------200V  
Year - code:  
(Y:Last digit of year)  
Week – code:  
(WW:01~52)  
PACKAGING OF DIODE AND BRIDGE RECTIFIERS  
TUBE PACK  
INNER BOX SIZE  
(mm)  
CARTON SIZE  
(mm)  
EA PER CARTON  
15,000  
PACKAGE  
EA PER BOX  
2,500  
WEIGHT(Kg)  
14.30  
PACKING CODE  
-C  
DB-1  
450*140*84  
464*305*283  
DISCLAIMER NOTICE  
Rectron Inc reserves the right to make changes without notice to any product  
specification herein, to make corrections, modifications, enhancements or other  
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-  
lity for any errors or inaccuracies. Data sheet specifications and its information  
contained are intended to provide a product description only. "Typical" paramet-  
ers which may be included on RECTRON data sheets and/ or specifications ca-  
n and do vary in different applications and actual performance may vary over ti-  
me. Rectron Inc does not assume any liability arising out of the application or  
use of any product or circuit.  
Rectron products are not designed, intended or authorized for use in medical,  
life-saving implant or other applications intended for life-sustaining or other rela-  
ted applications where a failure or malfunction of component or circuitry may di-  
rectly or indirectly cause injury or threaten a life without expressed written appr-  
oval of Rectron Inc. Customers using or selling Rectron components for use in  
such applications do so at their own risk and shall agree to fully indemnify Rect-  
ron Inc and its subsidiaries harmless against all claims, damages and expendit-  
ures.  

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