2SA1179-T [RECTRON]

Transistor;
2SA1179-T
型号: 2SA1179-T
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

Transistor

文件: 总2页 (文件大小:290K)
中文:  中文翻译
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RECTRON  
TECHNICAL SPECIFICATION  
2SA1179  
SEMICONDUCTOR  
SOT-23 BIPOLAR TRANSISTORS  
TRANSISTOR(PNP)  
FEATURES  
High breakdown voltage  
*
SOT-23  
COLLECTOR  
3
MECHANICAL DATA  
* Case: Molded plastic  
1
BASE  
0.055(1.40)  
2
0.047(1.20)  
* Epoxy: UL 94V-O rate flame retardant  
EMITTER  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
* Weight: 0.008 gram  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
0.020(0.50)  
0.012(0.30)  
0.004(0.10)  
0.000(0.00)  
* Marking: M  
0.100(2.55)  
0.089(2.25)  
0.020(0.50)  
0.012(0.30)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1
2
0.019(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
3
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Collector-Base Voltage  
SYMBOL  
VALUE  
-55  
UNITS  
VCBO  
V
V
Collector-Emitter Voltage  
VCEO  
-50  
Emitter-Base Voltage  
VCEO  
IC  
-5  
V
mA  
Collector Current-Continuous  
-150  
mw  
Total Device Dissipation  
PD  
200  
o
Junction and Storage Temperature  
TJ,Tstg  
-55-125  
C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
SYMBOL  
MIN.  
-55  
TYP.  
-
MAX.  
UNITS  
V(BR)CBO  
-
-
Collector-base breakdowm voltage (IC= -10µA, IE= 0)  
V
V
V
-
-
-50  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-emitter breakdowm voltage (IC= -1mA, IB= 0)  
-
Emitter-base breakdowm voltage (IE= -10µA, IC= 0)  
-5  
-
Collector cut-off current (VCB= -35V, IE= 0)  
Emitter cut-off current (VEB= -4V, IC= 0)  
-
-
-0.1  
-0.1  
u
u
A
A
IEBO  
hFE  
-
-
-
DC current gain (VCE= -6V, IC= -1mA)  
200  
-
400  
-0.5  
-
VCE(sat)  
VBE(sat)  
fT  
V
V
Collector-emitter saturation voltage (IC= -50mA, IB= -5mA)  
-
-
-
-1.0  
-
Base-emitter saturation voltage (IC= -50mA, IB= -5mA)  
Transition frequency (VCE= -6V, IC= -10mA)  
180  
4
MHZ  
-
-
Collector output capacitance (VCB= -6V, IE= 0, f=1MHZ)  
Cob  
p
F
2006-3  
DISCLAIMER NOTICE  
Rectron Inc reserves the right to make changes without notice to any product  
specification herein, to make corrections, modifications, enhancements or other  
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-  
lity for any errors or inaccuracies. Data sheet specifications and its information  
contained are intended to provide a product description only. "Typical" paramet-  
ers which may be included on RECTRON data sheets and/ or specifications ca-  
n and do vary in different applications and actual performance may vary over ti-  
me. Rectron Inc does not assume any liability arising out of the application or  
use of any product or circuit.  
Rectron products are not designed, intended or authorized for use in medical,  
life-saving implant or other applications intended for life-sustaining or other rela-  
ted applications where a failure or malfunction of component or circuitry may di-  
rectly or indirectly cause injury or threaten a life without expressed written appr-  
oval of Rectron Inc. Customers using or selling Rectron components for use in  
such applications do so at their own risk and shall agree to fully indemnify Rect-  
ron Inc and its subsidiaries harmless against all claims, damages and expendit-  
ures.  
RECTRON  

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