2SA1179-T [RECTRON]
Transistor;型号: | 2SA1179-T |
厂家: | RECTRON SEMICONDUCTOR |
描述: | Transistor |
文件: | 总2页 (文件大小:290K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RECTRON
TECHNICAL SPECIFICATION
2SA1179
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
High breakdown voltage
*
SOT-23
COLLECTOR
3
MECHANICAL DATA
* Case: Molded plastic
1
BASE
0.055(1.40)
2
0.047(1.20)
* Epoxy: UL 94V-O rate flame retardant
EMITTER
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
* Marking: M
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1
2
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
3
Dimensions in inches and (millimeters)
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Collector-Base Voltage
SYMBOL
VALUE
-55
UNITS
VCBO
V
V
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
VCEO
IC
-5
V
mA
Collector Current-Continuous
-150
mw
Total Device Dissipation
PD
200
o
Junction and Storage Temperature
TJ,Tstg
-55-125
C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
MIN.
-55
TYP.
-
MAX.
UNITS
V(BR)CBO
-
-
Collector-base breakdowm voltage (IC= -10µA, IE= 0)
V
V
V
-
-
-50
V(BR)CEO
V(BR)EBO
ICBO
Collector-emitter breakdowm voltage (IC= -1mA, IB= 0)
-
Emitter-base breakdowm voltage (IE= -10µA, IC= 0)
-5
-
Collector cut-off current (VCB= -35V, IE= 0)
Emitter cut-off current (VEB= -4V, IC= 0)
-
-
-0.1
-0.1
u
u
A
A
IEBO
hFE
-
-
-
DC current gain (VCE= -6V, IC= -1mA)
200
-
400
-0.5
-
VCE(sat)
VBE(sat)
fT
V
V
Collector-emitter saturation voltage (IC= -50mA, IB= -5mA)
-
-
-
-1.0
-
Base-emitter saturation voltage (IC= -50mA, IB= -5mA)
Transition frequency (VCE= -6V, IC= -10mA)
180
4
MHZ
-
-
Collector output capacitance (VCB= -6V, IE= 0, f=1MHZ)
Cob
p
F
2006-3
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other rela-
ted applications where a failure or malfunction of component or circuitry may di-
rectly or indirectly cause injury or threaten a life without expressed written appr-
oval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rect-
ron Inc and its subsidiaries harmless against all claims, damages and expendit-
ures.
RECTRON
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