TBKC621202DH [POWEREX]
Silicon Controlled Rectifier, 1963A I(T)RMS, 6200V V(DRM), 6200V V(RRM), 1 Element, HERMETIC SEALED, CERAMIC, 4 PIN;
| 型号： | TBKC621202DH |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Silicon Controlled Rectifier, 1963A I(T)RMS, 6200V V(DRM), 6200V V(RRM), 1 Element, HERMETIC SEALED, CERAMIC, 4 PIN 栅 栅极 |
| 文件： | 总4页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TBKC__1203
Phase Control Thyristor
1250 Amperes 6500 Volts
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 http://www.pwrx.com
(724)925-7272
The TBKC is a high voltage, high current
disc pack SCR employing a high di/dt
gate structure. This gate design allows
the SCR to be reliably operated at high
di/dt and dv/dt conditions in various
phase control applications.
FEATURES:
Low On-State Voltage
High di/dt Capability
High dv/dt Capability
Hermetic Ceramic Package
Excellent Surge and I2t Ratings
APPLICATIONS:
DC Power Supplies
Motor Controls
ORDERING INFORMATION
AC Soft-Starters
Select the complete 12 digit Part Number using the table below.
EXAMPLE: TBKC651202DH is a 6500V-1200A SCR with 300ma
IGT and 12 inch gate and cathode potential leads.
Voltage Voltage Current Current
PART
Rating
VDRM-VRRM
Code
Rating
Itavg
Code
Turn-Off
Tq
Gate
IGT
Leads
TBKC
6500
6200
6000
65
62
60
1250
12
0
2
800us
300ma
12"
(typ.)
(max)
Revised:
12/1/2006
Page 1
TBKC__1203
Phase Control Thyristor
1250 Amperes 6500 Volts
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 http://www.pwrx.com
(724)925-7272
Absolute Maximum Ratings
Characteristic
Symbol
VDRM-VRRM
Rating
Units
Repetitive Peak Voltage
6500
1250
Volts
A
Average On-State Current, TC=70°C
IT(Avg.)
IT(RMS)
IT(Avg.)
IT(RMS)
ITSM
RMS On-State Current, TC=70°C
1963
A
Average On-State Current, TC=50°C
RMS On-State Current, TC=50°C
1500
A
2356
A
Peak One Cycle Surge Current, 60Hz, VR=0V
Peak One Cycle Surge Current, 50Hz, VR=0V
22,000
20,742
A
ITSM
A
Fuse Coordination I2t, 60Hz
Fuse Coordination I2t, 50Hz
I2t
I2t
A2s
A2s
2.02E+06
2.15E+06
100
Critical Rate-of-Rise of On-State Current
Repetitive .67•VDRM
di/dt
A/us
Critical Rate-of-Rise of On-State Current
di/dt
200
A/us
Non-Repetitive .67•VDRM
PGM
Peak Gate Power, 100us
16
5
Watts
Watts
PG(avg)
Average Gate Power
Operating Temperature
Storage Temperature
Tj
-40 to+125
-50 to+150
°C
°C
TStg.
Approximate Weight
3.5
1.59
lb
Kg
Mounting Force
9000-10000
40 - 44.5
lbs
KNewtons
Information presented is based upon manufacturers preliminary testing and
projected capabilities. This information is subject to change without notice. The
manufacturer makes no claim as to suitability for use, reliability, capability or
future availability of this product.
Page 2
TBKC__1203
Phase Control Thyristor
1250 Amperes 6500 Volts
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 http://www.pwrx.com
(724)925-7272
Electrical Characteristics, Tj=25°C unless otherwise specified
Rating
Characteristic
Repetitive Peak Forward
Symbol
Test Conditions
min
typ
max
Units
Leakage Current
IDRM
Tj=125°C, VDRM=Rated
400
ma
Repetitive Peak Reverse
Leakage Current
IRRM
VTM
Tj=125°C, VRRM=Rated
Tj=125°C, ITM=2000A
400
ma
V
Peak On-State Voltage
2.75
V
TM Model, Low Level
V0
r
Tj=125°C
1.153
V
VTM = VO + r•ITM
15% ITM - π•ITM
7.44E-04
Ω
VTM Model, High Level
VTM = VO + r•ITM
V0
r
Tj=125°C
1.79
V
π•ITM - ITSM
5.60E-04
0.000150
Ω
VTM Model,
4-Term
A
B
C
Tj=125°C
0.184
VTM= A + B•Ln(ITM) +
C•(ITM) + D•(ITM)
15%ITM - ITSM
½
0.000509
0.00634
D
td
VD = 0.5•VDRM
Turn-On Delay Time
2.5
us
us
Gate Drive: 40V - 20Ω
Tj=125°C
Turn-Off Time
tq
800
dv/dt = 20V/us to 80% VDRM
IR(Rec)
QRR
Reverse Recovery Current
Tj=125°C 2000A -10A/us
200
A
Reverse Recovery Charge
dv/dt(Crit)
2800
uCoul
V/us
dv/dt
Tj=125°C Exp. Waveform
VD =80% Rated
1000
IGT
Tj=25°C VD = 12V
Gate Trigger Current
40
175
2.0
300
5.0
5
ma
V
VGT
Gate Trigger Voltage
0.8
VGRM
Peak Reverse Gate Voltage
V
Thermal Characteristics
Rating
typ
Characteristic
Symbol
Test Conditions
min
max
Units
Thermal Resistance
RΘjc
RΘcs
Junction to Case
Case to Sink
Double side cooled
Double side cooled
Double side cooled
0.0115 0.013
0.0015 0.002
°C/Watt
°C/Watt
ZΘjc
Thermal Impedance Model
Σ(A(N)•(1-exp(-t/Tau(N))))
ZΘjc(t) =
where:
N =
1
2
3
4
A(N) = 1.10E-04 8.86E-04 4.54E-03 7.50E-03
Tau(N) = 5.05E-04 1.33E-02 1.95E-01 1.30E+00
Page 3
TBKC__1203
Phase Control Thyristor
1250 Amperes 6500 Volts
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 http://www.pwrx.com
(724)925-7272
MAXIMUM TRANSIENT THERMAL
IMPEDANCE
Maximum On-State Voltage Drop
1.40E-02
1.20E-02
1.00E-02
8.00E-03
6.00E-03
4.00E-03
2.00E-03
0.00E+00
10.0
Tj = 125°C
8.0
6.0
4.0
2.0
0.0
100
1000
10000
100000
0.001
0.01
0.1
1
10
ITM (A)
Time (sec)
Maximum Allowable Case Temperature
Maximum On-State Power Dissipation
Sinusoidal Waveform
Sinusoidal Waveform
130
120
110
100
90
6000
5000
4000
3000
2000
1000
0
120°
180°
90°
CONDUCTION ANGLE
60°
0°
180°
360°
CONDUCTION ANGLE
80
70
60°
0°
180°
360°
90°
120°
180°
60
0
500
1000
1500
2000
0
500
1000
Iavg (A)
1500
2000
Iavg (A)
Maximum On-State Power Dissipation
Maximum Allowable Case Temperature
Square Waveform
Square Waveform
8000
7000
6000
5000
4000
3000
2000
1000
0
130
360°
CONDUCTION ANGLE
120
110
100
90
180°
120°
90°
60°
0°
180°
360°
CONDUCTION ANGLE
80
0°
180°
360°
70
360°
180°
120°
90°
60°
60
0
500
1000
1500
2000
2500
0
500
1000
Iavg (A)
1500
2000
Iavg (A)
Page 4
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