TBKD45190HDH [POWEREX]
Silicon Controlled Rectifier, 3314A I(T)RMS, 4500V V(DRM), 4500V V(RRM), 1 Element, HERMETIC SEALED, CERAMIC PACKAGE-3;
| 型号： | TBKD45190HDH |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Silicon Controlled Rectifier, 3314A I(T)RMS, 4500V V(DRM), 4500V V(RRM), 1 Element, HERMETIC SEALED, CERAMIC PACKAGE-3 栅 栅极 |
| 文件： | 总4页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TBKD__190H
Phase Control Thyristor
1890 Amperes 4500 Volts
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 (724)925-7272 www.pwrx.com
The TBKD is a high voltage, high current disc pack
SCR employing a high di/dt gate structure. This
gate design allows the SCR to be reliably operated
at high di/dt and dv/dt conditions in various phase
control applications.
FEATURES:
Low On-State Voltage
High di/dt Capability
High dv/dt Capability
Hermetic Ceramic Package
Excellent Surge and I2t Ratings
APPLICATIONS:
DC Power Supplies
Motor Controls
ORDERING INFORMATION
AC Soft-Starters
Select the complete 12 digit Part Number using the table below.
EXAMPLE: TBKD45190HDH is a 4500V - 1890A SCR with 250ma
IGT and 12 inch gate and cathode potential leads.
Voltage Voltage Current Current
PART
Rating
VDRM-VRRM
Code
Rating
Itavg
Code
Turn-Off
Tq
Gate
IGT
Leads
TBKD
4500
4200
4000
45
42
40
1890
19
0
H
600us
250ma
12"
(typ.)
(max)
Revised:
10/17/2007
Page 1
TBKD__190H
Phase Control Thyristor
1890 Amperes 4500 Volts
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 (724)925-7272 www.pwrx.com
Absolute Maximum Ratings
Characteristic
Symbol
Rating
Units
VDRM-VRRM
Repetitive Peak Voltage
4000 - 4500
1890
Volts
A
Average On-State Current, TC=70°C
IT(Avg.)
RMS On-State Current, TC=70°C
IT(RMS)
2969
A
Average On-State Current, TC=60°C
RMS On-State Current, TC=60°C
IT(Avg.)
2110
A
IT(RMS)
3314
A
Peak One Cycle Surge Current, 60Hz, VR=0V
Peak One Cycle Surge Current, 50Hz, VR=0V
ITSM
ITSM
33,600
31,678
A
A
Fuse Coordination I2t, 60Hz
Fuse Coordination I2t, 50Hz
I2t
I2t
A2s
A2s
4.70E+06
5.02E+06
100
Critical Rate-of-Rise of On-State Current
Repetitive .67•VDRM
di/dt
A/us
Critical Rate-of-Rise of On-State Current
di/dt
200
A/us
Non-Repetitive .67•VDRM
PGM
Peak Gate Power, 100us
16
5
Watts
Watts
PG(avg)
Average Gate Power
Operating Temperature
Storage Temperature
Tj
-40 to+125
-50 to+150
°C
°C
TStg.
Approximate Weight
2.5
1.13
lb
Kg
Mounting Force
9000-10000
40 - 44.5
lbs
KNewtons
Information presented is based upon manufacturers testing and projected
capabilities. This information is subject to change without notice. The
manufacturer makes no claim as to suitability for use, reliability, capability or
future availability of this product.
Page 2
TBKD__190H
Phase Control Thyristor
1890 Amperes 4500 Volts
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 (724)925-7272 www.pwrx.com
Electrical Characteristics, Tj=25°C unless otherwise specified
Rating
Characteristic
Repetitive Peak Forward
Symbol
Test Conditions
min
typ
max
Units
Leakage Current
IDRM
Tj=125°C, VDRM=Rated
250
ma
Repetitive Peak Reverse
Leakage Current
IRRM
VTM
Tj=125°C, VRRM=Rated
Tj=125°C, ITM=2000A
250
ma
V
Peak On-State Voltage
1.70
V
TM Model, Low Level
V0
r
Tj=125°C
1.130
V
VTM = VO + r•ITM
15% ITM - π•ITM
2.75E-04
Ω
VTM Model, High Level
VTM = VO + r•ITM
V0
r
Tj=125°C
1.274
V
π•ITM - ITSM
2.46E-04
0.468
Ω
VTM Model,
4-Term
A
B
C
Tj=125°C
0.112
VTM= A + B•Ln(ITM) +
C•(ITM) + D•(ITM)
15%ITM - ITSM
½
0.000249
-0.00253
D
td
VD = 0.5•VDRM
Turn-On Delay Time
3.5
us
us
Gate Drive: 40V - 20Ω
Tj=125°C
Turn-Off Time
tq
600
dv/dt = 20V/us to 80% VDRM
IR(Rec)
QRR
Reverse Recovery Current
Tj=125°C 1500A -10A/us
A
Reverse Recovery Charge
dv/dt(Crit)
uCoul
V/us
dv/dt
Tj=125°C Exp. Waveform
VD =80% Rated
1000
IGT
Tj=25°C VD = 12V
Gate Trigger Current
30
150
2.0
250
4.0
5
ma
V
VGT
Gate Trigger Voltage
0.8
VGRM
Peak Reverse Gate Voltage
V
Thermal Characteristics
Rating
typ
Characteristic
Symbol
Test Conditions
min
max
Units
Thermal Resistance
RΘjc
RΘcs
Junction to Case
Case to Sink
Double side cooled
Double side cooled
Double side cooled
0.01
0.012
°C/Watt
°C/Watt
0.0015 0.002
ZΘjc
Thermal Impedance Model
Σ(A(
N
)•(1-exp(-t/Tau( ))))
N
ZΘjc(t) =
where:
N =
1
2
3
4
A(N) = 1.10E-04 8.86E-04 4.54E-03 6.47E-03
au(N) = 5.05E-04 1.33E-02 1.95E-01 1.25E+00
T
Page 3
TBKD__190H
Phase Control Thyristor
1890 Amperes 4500 Volts
Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 (724)925-7272 www.pwrx.com
MAXIMUM TRANSIENT THERMAL
IMPEDANCE
Maximum On-State Voltage Drop
1.4E-02
1.2E-02
1.0E-02
8.0E-03
6.0E-03
4.0E-03
2.0E-03
0.0E+00
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Tj = 125 C
100
1000
10000
ITM (A)
100000
0.001
0.01
0.1
1
10
Time (sec)
Maximum Allowable Case Temperature
Maximum On-State Power Dissipation
Sinusoidal Waveform
Sinusoidal Waveform
130
8000
180
120
110
100
90
7000
6000
5000
4000
3000
2000
1000
0
120
CONDUCTION ANGLE
90
60
0°
180°
360°
80
CONDUCTION ANGLE
70
60
0°
180°
360°
60
180
120
90
50
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Iavg (A)
Iavg (A)
Maximum Allowable Case Temperature
Maximum On-State Power Dissipation
Square Waveform
Square Waveform
8000
130
120
110
100
90
360
180
120
CONDUCTION ANGLE
7000
6000
5000
4000
3000
2000
1000
0
90
60
0°
180°
360°
CONDUCTION ANGLE
80
70
0°
180°
360°
60
60
180
90 120
2000
360
50
0
1000
2000
3000
4000
0
1000
3000
4000
Iavg (A)
Iavg (A)
Page 4
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