FX70SMJ-03 [POWEREX]
Pch POWER MOSFET HIGH-SPEED SWITCHING USE; P沟道功率MOSFET的高速开关使用型号: | FX70SMJ-03 |
厂家: | POWEREX POWER SEMICONDUCTORS |
描述: | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
文件: | 总4页 (文件大小:65K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
FX70SMJ-03
OUTLINE DRAWING
Dimensions in mm
4.5
15.9 max
1.5
4
φ 3.2
2
4.4
G
1.0
5.45
1
2
3
5.45
0.6
2.8
4
3
4V DRIVE
•
1
2
3
4
GATE
DRAIN
SOURCE
DRAIN
1
VDSS ............................................................... –30V
rDS (ON) (MAX) ............................................. 12.3mΩ
•
•
ID .................................................................... –70A
Integrated Fast Recovery Diode (TYP.) ...........70ns
•
2
4
•
TO-3P
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
–30
±20
–70
V
A
IDM
IDA
Drain current (Pulsed)
–280
–70
A
Avalanche drain current (Pulsed) L = 10µH
Source current
A
IS
–70
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
–280
A
PD
150
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
4.8
Tstg
—
Storage temperature
Weight
Typical value
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–30
—
Typ.
—
Max.
—
ID = –1mA, VDS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –35A, VGS = –10V
ID = –26A, VGS = –4V
ID = –35A, VGS = –10V
ID = –35A, VDS = –10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.3
12.3
25
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.3
—
–1.8
10.0
19
mΩ
mΩ
V
—
—
–0.35
55.8
11140
2300
1000
85
–0.43
—
—
S
Ciss
—
—
pF
pF
pF
ns
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
228
751
360
–1.0
—
—
ns
VDD = –15V, ID = –35A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
—
ns
Fall time
—
—
ns
IS = –35A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
–1.5
0.83
—
V
Rth (ch-c)
trr
—
°C/W
ns
IS = –35A, dis/dt = 50A/µs
Reverse recovery time
—
70
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
250
200
150
100
50
–3
–2
tw = 100µs
–102
–7
–5
1ms
–3
–2
10ms
–101
–7
–5
DC
TC = 25°C
Single Pulse
–3
–2
–100
–7
–5
0
0
1
2
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
50
100
150
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–100
–80
–60
–40
–20
0
–50
–40
–30
–20
–10
0
–6V
–5V
–8V
–6V
VGS = –10V
–8V
VGS = –10V
PD = 150W
–4V
–5V
–4V
–3V
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
–3V
0
–0.4
–0.8
–1.2
–1.6
–2.0
0
–0.2
–0.4
–0.6
–0.8
–1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–2.0
–1.6
–1.2
–0.8
–0.4
0
40
32
24
16
8
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
I
D
= –100A
V
GS = –4V
–70A
–35A
–10V
0
1
2
3
–100
–10
–2 –3 –5 –7
–10
–2 –3 –5–7
–2 –3 –5–7
–10
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT
ID
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–100
–80
–60
–40
–20
0
102
7
Tc = 25°C
V
DS = –10V
VDS = –10V
Pulse Test
5
4
3
Pulse Test
2
TC = 125°C
75°C
25°C
101
7
5
4
3
2
100
1
2
–100
–10
–2 –3 –5 –7
–2 –3 –5 –7
–10
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
2
t
d(off)
Tch = 25°C
105
7
5
f = 1MH
Z
5
4
3
t
t
f
V
GS = 0V
3
2
r
2
Ciss
104
7
5
t
d(on)
102
7
Coss
Crss
3
2
5
4
3
103
7
5
Tch = 25°C
GS = –10V
DD = –15V
V
V
R
2
3
2
GEN = RGS = 50Ω
101
0
1
0
1
2
–2 –3 –5
–3 –5 –7
–2 –3 –5 –7
–2 –3
DS (V)
–5–7
–2 –3 –5–7
–2 –3 –5–7
–10
–10
–10
–10
–10
DRAIN-SOURCE VOLTAGE
V
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX70SMJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–100
–80
–60
–40
–20
0
Tch = 25°C
V
GS = 0V
I
D
= –70A
Pulse Test
VDS = –10V
–20V
–25V
TC = 25°C
75°C
125°C
0
40
80
120
160
(nC)
200
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Q
g
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
GS = –10V
V
DS = –10V
= –1mA
I
D
= 1/2I
D
I
D
5
4
3
Pulse Test
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
V
GS = 0V
5
I
D = –1mA
3
2
100
7
5
D = 1.0
0.5
3
2
0.2
0.1
P
DM
10–1
tw
7
5
T
0.05
0.02
0.01
Single Pulse
tw
D
=
3
2
T
10–2
–3
–2
–1
0
1
2 3 57
10 10
2
10–4
10
10
10
10
2 3 57
2 3 57
2 3 57
2 3 57
2 3 57
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Jan.1999
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