FX70SMJ-03-A8 [RENESAS]
High-Speed Switching Use Pch Power MOS FET; 高速开关使用P沟道功率MOS FET
| 型号： | FX70SMJ-03-A8 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High-Speed Switching Use Pch Power MOS FET |
| 文件： | 总7页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FX70SMJ-03
High-Speed Switching Use
Pch Power MOS FET
REJ03G1456-0200
(Previous: MEJ02G0271-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
Drive voltage : 4 V
DSS : –30 V
DS(ON) (max) : 12.3 mΩ
V
r
ID : –70 A
Integrated Fast Recovery Diode (TYP.) : 70 ns
Outline
RENESAS Package code: PRSS0004ZB-A
(Package name: TO-3P)
4
1. Gate
2. Drain
3. Source
4. Drain
1
2
2, 4
Applications
Motor control, Lamp con-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
–30
Unit
Conditions
VGS = 0 V
V
V
±20
VDS = 0 V
–70
A
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
IDM
–280
A
IDA
–70
A
L = 10 µH
IS
–70
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
ISM
–280
A
PD
150
W
°C
°C
g
Tch
Tstg
—
– 55 to +150
– 55 to +150
4.8
Typical value
Rev.2.00 Aug 07, 2006 page 1 of 6
FX70SMJ-03
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
IGSS
Min
–30
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –30 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –35 A, VGS = –10 V
ID = –26 A, VGS = –4 V
ID = –35 A, VGS = –10 V
ID = –35 A, VDS = –10 V
—
±0.1
0.1
–2.3
12.3
25
µA
mA
V
IDSS
—
—
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
–1.3
—
–1.8
10.0
19
mΩ
mΩ
V
—
—
–0.35
55.8
11140
2300
1000
85
–0.43
—
—
S
—
—
pF
pF
pF
ns
VDS = –10 V, VGS = 0 V,
f = 1MHz
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
—
—
VDD = –15 V, ID = –35 A,
V
GS = –10 V,
Rise time
tr
—
228
751
360
–1.0
—
—
ns
RGEN = RGS = 50 Ω
Turn-off delay time
td(off)
—
—
ns
Fall time
tf
—
—
Source-drain voltage
VSD
—
–1
IS = –35 A, VGS = 0 V
hannel to case
Thermal resistance
Rth(ch-c)
trr
—
Reverse recovery time
—
70
–35 A, dis/dt = 50 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6
FX70SMJ-03
Performance Curves
Power Dissipation Derating Curve
Maximum Safe Operating Area
250
200
150
100
50
–3
–2
tw = 100µs
–102
–7
–5
1ms
–3
–2
–
–
101
–7
–5
DC
Tc = 25°C
Single Pulse
–3
–2
100
–7
–5
0
0
1
2
–2 –3 –5–7 –2
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
50
100
150
200
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
cteristics (Typical)
Output Characteristics (Typical)
–100
–80
–60
–40
–20
0
–10
0
–6V
–5V
–8V
–6V
V
GS = –10V
PD = 150W
–4V
–5V
–4
–3V
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
0
–0.4
–0.8
0
–0.2
–0.4
–0.6
–0.8 –1.0
Drain-So
Drain-Source Voltage VDS (V)
On-State Resistance vs.
Drain Current (Typical)
On-S
Gate-Source cal)
–2.0
–1.6
–1.2
–0.8
–0.4
0
40
32
24
16
8
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
I
D
= –100A
V
GS = –4V
–70A
–35A
–10V
0
1
2
3
–100
–2 –3 –5 –7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
–2
–4
–6
–8
–10
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Aug 07, 2006 page 3 of 6
FX70SMJ-03
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
–100
–80
–60
–40
–20
0
102
7
Tc = 25°C
V
V
= –10V
DS
Pulse Test
= –10V
DS
Pulse Test
5
4
3
2
T
C
=
1
25°C
75°C
101
7
25°C
5
4
3
2
100
1
2
–100
–10
–2 –3 –5 –7
–2 –3 –5 –7
–10
0
–2
–4
–6
–8
–10
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Capacitance vs.
Drain-Source Voltage (Typical)
haracteristics (Typical)
2
t
d(off)
Tch = 25°C
f = 1MHz
105
7
5
t
V
GS
= 0V
3
2
r
Ciss
104
7
5
td(on)
Coss
C
3
2
103
7
5
3
Tch = 25°C
V
V
R
= –10V
= –15V
= R
GS
DD
2
= 50Ω
GS
3
2
GEN
101
0
0
1
2
–3 –5 –7
–2 –3
–5–7
–2 –3 –5–7
–2 –3 –5–7
–2 –3 –5
–10
–10
–10
–10
Drain-Sourc
Drain Current ID (A)
Gat
Gate
Source-Drain Diode Forward
Characteristics (Typical)
–10
–8
–6
–4
–2
0
–100
–80
–60
–40
–20
0
V
= 0V
Tch = 25°C
= –70A
GS
Pulse Test
I
D
V
DS = –10V
–20V
–25V
TC = 25°C
75°C
25°C
1
0
40
80
120
160
200
0
–0.4
–0.8
–1.2
–1.6
–2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6
FX70SMJ-03
Threshold Voltage vs.
Channel Temperature (Typical)
On-State Resistance vs.
Channel Temperature (Typical)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
= –10V
GS
= –35A
Pulse Test
V
= –10V
DS
= –1mA
I
D
5
4
I
D
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transiepedance Characteristics
1.4
101
7
5
V
= 0V
GS
= –1mA
I
D
3
1.2
1.0
0.8
0.6
0.4
PDM
tw
T
0.05
0.02
tw
T
D
=
0.01
Single Pulse
–3
–2
–1
0
1
2 3 57
10 10
2
10–4
10
10
10
10
2 3 57
2 3 57
2 3 57
2 3 57
2 3 57
–50
0
50
Pulse Width tw (s)
Switching Waveform
Channel Tempe
Switching Time
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
R
GEN
R
L
90%
90%
V
DD
R
GS
10%
10%
Vout
t
t
t
d(off)
t
f
d(on)
r
Rev.2.00 Aug 07, 2006 page 5 of 6
FX70SMJ-03
Package Dimensions
Package Name
TO-3P*
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZB-A
Previous Code
MASS[Typ.]
4.8g
Unit: mm
4.5
15.9Max
1.5
2
4.4
2.8
1.0
0.6
5.45 5.45
4
Order Code
Standard order
code example
Lead form
Standard pa
Standard order code
Straight type
Lead form
Static electricit
Plastic Mag
0 Type name
30 Type name – Lead forming code
FX70SMJ-03
FX70SMJ-03-A8
Note : Please confirm the ping in detail.
Rev.2.00 Aug 07, 2006 page 6 of 6
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