FS16KM-6 [POWEREX]
Nch POWER MOSFET HIGH-SPEED SWITCHING USE; N沟道功率MOSFET的高速开关使用
| 型号： | FS16KM-6 |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS16KM-6
HIGH-SPEED SWITCHING USE
FS16KM-6
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
1 2 3
w
q GATE
w DRAIN
e SOURCE
q
¡VDSS ................................................................................ 300V
¡rDS (ON) (MAX) .............................................................. 0.33Ω
¡ID ..........................................................................................16A
¡Viso ................................................................................ 2000V
e
TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
300
Unit
V
VGS = 0V
VDS = 0V
±30
V
16
A
IDM
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
48
A
PD
35
W
Tch
–55 ~ +150
–55 ~ +150
2000
°C
°C
Vrms
g
Tstg
Viso
—
AC for 1minute, Terminal to case
Typical value
Weight
2.0
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16KM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
300
±30
—
Typ.
—
Max.
—
V
V
(BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V
(BR) GSS Gate-source breakdown voltage IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
Drain-source leakage current VDS = 300V, VGS = 0V
Gate-source threshold voltage ID = 1mA, VDS = 10V
V
V
—
—
IGSS
IDSS
Gate-source leakage current
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
Drain-source on-state resistance ID = 8A, VGS = 10V
Drain-source on-state voltage ID = 8A, VGS = 10V
—
0.25
2.0
10.0
1050
220
45
0.33
2.64
—
Ω
—
V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 8A, VDS = 10V
6.5
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
Coss
Crss
VDS = 25V, VGS = 0V, f = 1MHz
—
—
—
—
td (on)
tr
—
20
—
—
40
—
VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
—
110
50
—
—
—
VSD
Source-drain voltage
Thermal resistance
IS = 8A, VGS = 0V
Channel to case
—
1.5
—
2.0
3.57
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
102
7
50
40
30
20
10
0
5
tw=10µs
100µs
1ms
3
2
101
7
5
3
2
10ms
100
7
5
3
T
C
= 25°C
2
Single Pulse
10–1
7
DC
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
2
0
50
100
150
200
CASE TEMPERATURE
T
C
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
PD=
35W
V
GS=20V
10V
50
40
30
20
10
0
20
16
12
8
6V
C = 25°C
PD =
35W
TC = 25°C
Pulse Test
7V
V
GS = 20V
10V
T
8V
Pulse Test
7V
5.5V
6V
5V
5V
4.5V
4
4V
12
0
0
10
20
30
40
50
0
4
8
16
20
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN-SOURCE VOLTAGE
V
DS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16KM-6
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
0.4
0.3
0.2
20
16
12
8
T
C
= 25°C
T
C
= 25°C
VGS = 10V
Pulse Test
Pulse Test
20V
ID
= 30A
16A
8A
4
0.1
0
0
0
4
8
12
16
20
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
24
16
8
101
7
5
TC
= 25°C
DS = 50V
Pulse Test
TC = 25°C
75°C
V
125°C
3
2
100
7
5
3
2
V
DS = 10V
Pulse Test
0
10–1
0
4
8
12
16
20
100
2
3
5 7 101
2
3
5 7 102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
103
7
5
Tch = 25°C
3
2
V
DD = 150V
GS = 10V
V
Ciss
R
GEN = RGS = 50Ω
103
7
3
2
5
t
d(off)
3
2
102
7
5
Coss
Crss
102
7
t
f
r
t
5
3
2
3
2
Tch = 25°C
f = 1MHz
td(on)
V
GS = 0V
101
101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
100
2
3
5 7 101
2
3
5 7 102
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT
ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS16KM-6
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
40
32
24
16
8
V
GS = 0V
Tch = 25°C
= 16A
Pulse Test
ID
TC = 125°C
VDS = 50V
25°C
75°C
100V
200V
4
0
0
0
20
40
60
80
(nC)
100
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Qg
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
V
DS = 10V
= 1mA
V
GS = 10V
I
D
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
1.4
1.2
1.0
0.8
0.6
0.4
V
I
GS = 0V
D = 1mA
5
D=1
0.5
3
2
100
7
0.2
0.1
5
3
P
DM
2
10–1
7
0.05
0.02
0.01
tw
T
tw
T
5
D=
3
Single Pulse
2
10–2
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
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