FS16KMA-5A [POWEREX]
Nch POWER MOSFET HIGH-SPEED SWITCHING USE; N沟道功率MOSFET的高速开关使用
| 型号： | FS16KMA-5A |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS16KMA-5A
HIGH-SPEED SWITCHING USE
FS16KMA-5A
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
➀ ➁ ➂
➁
➀
➁
➂
GATE
DRAIN
SOURCE
➀
● 10V DRIVE
● VDSS ............................................................................... 250V
● rDS (ON) (MAX) ............................................................. 0.25Ω
● ID .........................................................................................16A
➂
TO-220FN
APPLICATION
CS Switch for CRT Display monitor
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
250
±20
16
V
A
IDM
Drain current (Pulsed)
48
A
IDA
Avalanche drain current (Pulsed) L = 200µH
Maximum power dissipation
Channel temperature
16
A
PD
35
W
Tch
–55 ~ +150
–55 ~ +150
2000
°C
°C
V
Tstg
Viso
—
Storage temperature
Isolation voltage
Weight
AC for 1minute, Terminal to case
Typical value
2.0
g
Sep.1998
MITSUBISHI Nch POWER MOSFET
FS16KMA-5A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
250
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10V
ID = 8A, VGS = 10V
ID = 8A, VDS = 10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±10
1
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2.0
—
3.0
0.19
1.52
16.0
1850
180
50
4.0
0.25
2.00
—
Ω
—
V
—
S
Ciss
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 25V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
30
—
Rise time
—
50
—
VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
320
70
—
Fall time
—
—
IS = 8A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
0.95
—
—
Rth (ch-c)
—
3.57
°C/W
Sep.1998
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