CM1200DB-34N [POWEREX]
Dual IGBTMOD HVIGBT Module 1200 Amperes/1700 Volts; 双IGBTMOD HVIGBT模块1200安培/ 1700伏
| 型号： | CM1200DB-34N |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Dual IGBTMOD HVIGBT Module 1200 Amperes/1700 Volts |
| 文件： | 总6页 (文件大小：536K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CM1200DB-34N
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual IGBTMOD™
HVIGBT Module
1200 Amperes/1700 Volts
A
D
D
U
K (4 TYP)
4
2
Q
F
B
E
C
Y
V
3
1
Description:
Z
E1
E2
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each
transistor having a reverse-
AA
G1
G2
M (3 TYP)
W
C1
C2
L
J
H
X
(6 PLACES)
G
AB
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
N
4(E1)
2(C2)
T
E1
C2
G2
R
S
P
G1
Features:
C1
E2
Q
£ Low Drive Power
3(C1)
1(E2)
£ Low V
CE(sat)
£ Super-Fast Recovery
Outline Drawing and Circuit Diagram
Free-Wheel Diode
Dimensions
Inches
Millimeters
130.0 0.5
140.0 0.5
124.0 0.25
57.0 0.25
30.0 0.2
20.0 0.1
53.0 0.2
40.0 0.2
44.0 0.2
M8
Dimensions
Inches
Millimeters
£ Isolated Baseplate for Easy
Heat Sinking
A
B
C
D
E
F
5.12 0.02
5.51 0.02
4.88 0.01
2.24 0.01
1.18 0.008
0.79 0.004
2.09 0.008
1.57 0.008
1.73 0.008
M8 Metric
0.28 Dia.
P
Q
R
1.50+0.04/-0.0 38.0+1.0/-0.0
0.2 0.008
0.65 Min.
5.0 0.2
16.5 Min.
7.7 Min.
Applications:
£ Traction
S
0.30 Min.
£ Medium Voltage Drives
£ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
T
0.47 0.008
1.16 0.02
0.45 0.008
0.55 0.008
11.85 0.2
29.5 0.5
11.5 0.2
14.0 0.2
U
G
H
J
V
W
X
1.10+0.04/-0.0 28.0+1.0/-0.0
K
L
Y
1.38 0.008
0.63 0.008
0.71 0.008
2.24 0.008
35.0 0.2
16.0 0.2
18.0 0.2
57.0 0.2
CM1200DB-34N is a 1700V
(V
), 1200 Ampere Dual
7.0 Dia.
Z
CES
IGBTMOD™ Power Module.
M
N
M4 Metric
2.17 0.01
M4
AA
AB
Type
Current Rating
Amperes
V
CES
55.2 0.3
Volts (x 50)
CM
1200
34
12/12 Rev. 1
1
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Absolute Maximum Ratings, T = 25 °C unless otherwise specified
j
Ratings
Symbol
CM1200DB-34N
-40 to 150
-40 to 125
-40 to 125
1700
Units
°C
Junction Temperature
Storage Temperature
Operating Temperature
T
j
T
stg
°C
T
opr
°C
Collector-Emitter Voltage (V
GE
= 0V)
V
CES
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
Gate-Emitter Voltage (V = 0V)
CE
V
GES
20
Collector Current (DC, T = 80°C)
c
I
C
1200
1
Peak Collector Current (Pulse)
I *
CM
2400
Emitter Current (T = 25°C)*2
I
1200
c
E
1
Emitter Surge Current (Pulse)*2
I *
EM
2400
Maximum Power Dissipation (T = 25°C, IGBT Part)*3
c
P
C
6900
Max. Mounting Torque M8 Main Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Max. Mounting Torque M4 Auxiliary Terminal Screws
Module Weight (Typical)
–
–
–
–
177
53
in-lb
27
in-lb
1.3
kg
Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.)
Maximum Short Circuit Pulse Width
V
4000
Volts
µs
iso
t
10
psc
(V
CC
= 1200V, V
CES
≤ 1700V, V = 15V, T = 125°C)
GE j
*1 Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T
j
rating (125°C).
opr(max)
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Junction temperature (T ) should not exceed T
j(max)
rating (150°C).
j
2
12/12 Rev. 1
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Static Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
= V , V = 0V
Min.
–
Typ.
–
Max.
4
Units
mA
Collector-Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
I
V
CE
CES
CES GE
V
GE(th)
I
= 120mA, V = 10V
6.0
–
7.0
8.0
0.5
2.80
–
Volts
µA
C
CE
I
V
= V
, V = 0V
–
GES
GE GES CE
Collector-Emitter Saturation Voltage
V
I
= 1200A, V
= 15V, T = 25°C*4
GE j
–
2.15
2.40
176
9.6
Volts
Volts
nF
CE(sat)
C
I
= 1200A, V
= 15V, T = 125°C*4
–
C
GE j
Input Capacitance
C
ies
–
–
Output Capacitance
C
oes
V
= 10V, f = 100kHz, V
CE GE
= 0V
–
–
nF
Reverse Transfer Capacitance
Total Gate Charge
C
–
2.8
–
nF
res
Q
V
CC
= 850V, I = 1200A, V
GE
= 15V
–
6.8
–
µC
G
C
2
Emitter-Collector Voltage
V
*
I
= 1200A, V
= 0V, T = 25°C*4
–
2.60
2.30
1.00
0.40
380
1.20
0.30
360
1.00
560
300
220
3.30
–
Volts
Volts
µs
EC
E
GE
GE
j
I
= 1200A, V
= 0V, T = 125°C*4
j
–
E
Turn-On Delay Time
t
V
CC
= 850V, I = 1200A,
–
–
d(on)
C
Turn-On Rise Time
t
V
GE
= 15V, R
= 1.3Ω,
–
–
µs
r
G(on)
Turn-On Switching Energy
Turn-Off Delay Time
E
T = 125°C, L = 150nH, Inductive Load
–
–
mJ/P
µs
on
j
s
t
V
= 850V, I = 1200A,
–
–
d(off)
CC
= 15V, R = 3.3Ω,
G(off)
C
Turn-Off Fall Time
t
f
V
GE
–
–
µs
Turn-Off Switching Energy
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
E
T = 125°C, L = 150nH, Inductive Load
–
–
mJ/P
µs
off
j
s
t *2
V
CC
= 850V, I = 1200A,
C
–
–
rr
I *2
rr
V
GE
= 15V, R
G(on)
= 1.3Ω,
–
–
Amperes
µC
Q *2
T = 125°C, L = 150nH,
j
–
–
rr
s
2
E
*
Inductive Load
–
–
mJ/P
rec
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
12/12 Rev. 1
3
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Thermal Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
0.018
0.040
–
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Case to Fin
R
Q
IGBT Part, 1/2 Module
FWDi Part, 1/2 Module
th(j-c)
th(j-c)
R
D
–
–
R
λ
= 1W/m•K, 1/2 Module
grease
–
0.016
th(c-f)
Mechanical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
600
9.5
15.0
–
Typ.
–
Max.
Units
–
Comparative Tracking Index
Clearance Distance in Air
Creepage Distance Along Surface
Internal Inductance
CTI
–
–
–
–
–
–
d
a
–
–
–
mm
mm
nH
d
–
s
L
IGBT Part
30
0.28
C-E(int)
Internal Lead Resistance
R
T
C
= 25°C
–
mΩ
C-E(int)
4
12/12 Rev. 1
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
2400
2000
1600
1200
800
2400
2000
1600
1200
800
5
4
3
2
1
15V
T = 125°C
V
= 20V
T = 25°C
j
T = 125°C
j
j
T = 25°C
j
T = 125°C
j
CE
12V
V
= 20V
GE
10V
8V
400
400
0
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
12
104
10
0
400 800 1200 1600 2000 2400
EMITTER CURRENT, I , (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
, (VOLTS)
GATE-EMITTER VOLTAGE, V , (VOLTS)
E
CE(sat)
GE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
103
102
101
100
101
100
5
4
3
2
1
V
= 15V
GE
T = 25°C
j
T = 125°C
j
C
ies
t
d(off)
t
t
t
d(on)
r
f
10-1
V
V
= 850V
C
CC
oes
=
15V
GE
V
= 15V
GE
R
= 1.3Ω
G(on)
f = 100kHz
T = 25°C
C
res
T = 125°C
j
j
Inductive Load
0
10-2
103
10-1
100
101
102
0
400 800 1200 1600 2000 2400
102
COLLECTOR CURRENT, I , (AMPERES)
COLLECTOR CURRENT, I , (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V , (VOLTS)
C
CE
C
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
GATE CHARGE, V
GE
500
400
3000
2500
2000
1500
1000
500
20
I
= 1200A
= 850V
V
V
= 850V
C
CC
V
=
15V
CC
GE
16
12
8
T = 25°C
j
R
= 1.3Ω
G(on)
T = 125°C
j
300
200
100
0
V
V
≤ 1200V
CC
=
15V
GE
R
≥ 3.3Ω
G(off)
T = 125°C
j
4
Module
Chip
0
0
0
2
4
6
8
0
400 800 1200 1600 2000 2400
0
500
1000
1500
CE
2000
EMITTER CURRENT, I , (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V , (VOLTS)
GATE CHARGE, Q , (μC)
E
G
12/12 Rev. 1
5
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
1200
1000
800
2000
1600
1200
800
1.2
1.0
0.8
0.6
V
V
R
R
= 850V
V
I
V
= 850V
CC
CC
=
15V
= 1200A
GE
C
= 1.3Ω
= 3.3Ω
= 15V
G(on)
GE
T = 125°C
G(off)
j
T = 125°C
Inductive Load
j
E
Single Pulse
Inductive Load
on
E
E
T
= 25°C
on
off
C
600
E
E
Per Unit Base =
off
rec
E
R
=
th(j-c)
rec
0.018°C/W
(IGBT)
400
200
0
0.4
0.2
R
=
400
0
th(j-c)
0.040°C/W
(FWDi)
0
10-3
10-2
10-1
100
101
0
400 800 1200 1600 2000 2400
0
2
4
6
8
10
12
COLLECTOR CURRENT, I , (AMPERES)
GATE RESISTANCE, R , (Ω)
C
G
TIME, (s)
6
12/12 Rev. 1
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