CM1200DC-34S [MITSUBISHI]
HIGH POWER SWITCHING USE NSULATED TYPE; 大功率开关使用NSULATED TYPE
| 型号： | CM1200DC-34S |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH POWER SWITCHING USE NSULATED TYPE |
| 文件： | 总11页 (文件大小：518K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200DC-34S
IC ································································ 1200A
VCES ·························································· 1700V
2-element in a Pack
Insulated Type
CSTBT™(III) / Soft Recovery Diode
AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Feb 2013 (HVM-1068)
1
< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
VCES
Item
Collector-emitter voltage
Gate-emitter voltage
Conditions
Ratings
1700
Unit
V
VGE = 0V
VGES
IC
VCE = 0V, Tj = 25 °C
DC, Tc = 110 °C
Pulse (Note 1)
DC
± 20
1200
V
A
Collector current
Emitter current
ICRM
IE
2400
A
1200
A
(Note 2)
IERM
Ptot
Viso
Ve
Pulse (Note 1)
2400
A
Maximum power dissipation (Note 3) Tc = 25°C, IGBT part
6750
W
V
Isolation voltage
RMS, sinusoidal, f = 60Hz, t = 1 min.
4000
Partial discharge extinction voltage
Operating junction temperature
Storage temperature
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
1320
V
Tjop
Tstg
tpsc
−50 ~ +150
−50 ~ +150
10
°C
°C
s
Short circuit pulse width
VCC = 1200V, VCE ≤ VCES, VGE =15V, Tj =150°C
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Item
Conditions
Unit
mA
Min
—
—
—
5.4
−0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
Tj = 25°C
4.0
—
—
6.6
0.5
—
—
—
—
—
2.70
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Tj = 125°C
Tj = 150°C
1.5
7.0
VGE(th)
IGES
Cies
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
VCE = 10 V, IC = 120 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
6.0
V
—
µA
nF
nF
nF
µC
216
8.0
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
Coes
Cres
QG
Output capacitance
Reverse transfer capacitance
Total gate charge
1.6
VCC = 850V, IC = 1200A, VGE
IC = 1200 A (Note 4)
=
±
15V
12.0
1.95
2.25
2.30
0.60
0.60
0.60
0.16
0.17
0.18
260
340
370
300
390
420
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
VCEsat
td(on)
tr
Collector-emitter saturation voltage
Turn-on delay time
V
V
GE = 15 V
µs
µs
mJ
mJ
V
CC = 850 V
Turn-on rise time
IC = 1200 A
GE = ±15 V
G(on) = 1.3 Ω
V
R
(Note 5)
Ls = 70 nH
Eon(10%)
Turn-on switching energy
Inductive load
(Note 6)
Eon
Turn-on switching energy
Feb 2013 (HVM-1068)
2
< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol Item
Limits
Typ
Conditions
Unit
µs
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
3.00
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
1.20
1.30
1.32
0.12
0.15
0.17
200
280
310
260
360
400
2.60
2.30
2.20
0.22
0.32
0.38
750
850
840
150
340
400
70
td(off)
Turn-off delay time
V
CC = 850 V
IC = 1200 A
GE = ±15 V
G(off) = 3.3 Ω
tf
Turn-off fall time
µs
mJ
mJ
V
V
R
(Note 5)
(Note 6)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Ls = 70 nH
Eoff(10%)
Turn-off switching energy
Turn-off switching energy
Emitter-collector voltage
Reverse recovery time
Reverse recovery current
Inductive load
Eoff
IE = 1200 A (Note 4)
VGE = 0 V
VEC
trr
µs
A
Irr
VCC = 850 V
IC = 1200 A
V
GE = ±15 V
G(on) = 1.3 Ω
Qrr
Reverse recovery charge
Reverse recovery energy
µC
mJ
mJ
R
Ls = 70 nH
Inductive load
(Note 2)
(Note 5)
Erec(10%)
170
210
80
(Note 2)
(Note 6)
Reverse recovery energy
Erec
180
230
THERMAL CHARACTERISTICS
Limits
Typ
—
Symbol
Item
Conditions
Unit
Min
—
Max
18.5
42.0
Rth(j-c)Q
Rth(j-c)D
Junction to Case, IGBT part (per 1/2 module)
Junction to Case, FWDi part (per 1/2 module)
Case to heat sink, 1/2 module
grease = 1W/m·k, D(c-s) = 100m
K/kW
K/kW
Thermal resistance
—
—
Rth(c-s)
Contact thermal resistance
—
16.0
—
K/kW
Feb 2013 (HVM-1068)
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< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MECHANICAL CHARACTERISTICS
Limits
Typ
—
Symbol
Item
Conditions
M8 : Main terminals screw
Unit
Min
7.0
3.0
1.0
—
Max
22.0
6.0
3.0
—
Mt
N·m
N·m
N·m
kg
Mounting torque
Ms
M6 : Mounting screw
—
Mt
M4 : Auxiliary terminals screw
—
m
Mass
0.8
—
CTI
da
Comparative tracking index
Clearance
600
9.5
15.0
—
—
—
—
—
mm
mm
nH
ds
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
—
—
LP CE
RCC’+EE’
rg
22
—
TC = 25°C, 1/2 module
TC = 25°C, 1/2 module
—
0.16
0.28
—
mꢀ
ꢀ
—
—
Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Tjopmax rating.
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjopmax rating .
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
Feb 2013 (HVM-1068)
4
< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
TRANSFER CHARACTERISTICS
(TYPICAL)
(TYPICAL)
2500
2500
Tj = 125°C
VCE = 10V
VGE = 17V
2000
2000
1500
1000
500
0
VGE = 11V
VGE = 15V
VGE = 13V
1500
Tj = 125°C / 150°C
VGE = 9V
1000
500
0
Tj = 25°C
0
1
2
3
4
5
6
0
5
10
15
Collector - Emitter Voltage [V]
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
2500
2500
2000
1500
1000
500
VGE = 15V
Tj = 125°C
Tj = 125°C
2000
Tj = 25°C
Tj = 150°C
1500
1000
500
0
Tj = 25°C
Tj = 150°C
0
0
1
2
3
4
0
1
2
3
4
Emitter-Collector Voltage [V]
Collector-Emitter Saturation Voltage [V]
Feb 2013 (HVM-1068)
5
< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
1000
VCE = 850V, I
C
= 1200A
Tj = 25°C
15
10
5
Cies
100
10
0
Coes
-5
1
Cres
-10
-15
VGE = 0V, Tj = 25°C
f = 100kHz
0.1
0
5
10
15
0.1
1
10
100
Gate Charge [µC]
Collector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
1200
1200
V
R
CC = 850V, VGE = ±15V
G(on) = 1.3ꢀ, RG(off) = 3.3ꢀ
Tj = 125°C, Inductive load
V
R
CC = 850V, VGE = ±15V
G(on) = 1.3ꢀ, RG(off) = 3.3ꢀ
Tj = 150°C, Inductive load
1000
800
600
400
200
0
1000
800
600
400
200
0
Eon
Eon
Eoff
Eoff
Erec
Erec
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Collector Current [A]
Collector Current [A]
Feb 2013 (HVM-1068)
6
< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
2000
1500
1000
500
0
1000
V
CC = 850V, I
C
= 1200A
V
CC = 850V, I
C = 1200A
VGE = ±15V, Tj = 125°C
VGE = ±15V, Tj = 125°C
Inductive load
Inductive load
800
600
400
200
0
Eon
Eoff
Erec
0
2
4
6
8
0
5
10
15
20
Gate Resistance [ꢀ]
Gate Resistance [ꢀ]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
2000
1000
VCC = 850V, I
C
= 1200A
VCC = 850V, I
C = 1200A
VGE = ±15V, Tj = 150°C
VGE = ±15V, Tj = 150°C
Inductive load
Inductive load
800
600
400
200
0
1500
1000
500
0
Eon
Eoff
Erec
0
2
4
6
8
0
5
10
15
20
Gate Resistance [ꢀ]
Gate Resistance [ꢀ]
Feb 2013 (HVM-1068)
7
< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
10
10
VCC = 850V, VGE = ±15V
VCC = 850V, VGE = ±15V
RG(on) = 1.3ꢀ, RG(off) = 3.3ꢀ
RG(on) = 1.3ꢀ, RG(off) = 3.3ꢀ
Tj = 125°C, Inductive load
Tj = 150°C, Inductive load
td(off)
td(off)
1
1
td(on)
td(on)
tf
tf
0.1
0.1
tr
tr
0.01
0.01
100
1000
10000
100
1000
10000
Collector Current [A]
Collector Current [A]
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
10
1
10000
1000
100
100
10
1
10000
1000
100
VCC = 850V, VGE = ±15V
RG(on) = 1.3ꢀ, LS = 70nH
Tj = 125°C, Inductive load
VCC = 850V, VGE = ±15V
RG(on) = 1.3ꢀ, LS = 70nH
Tj = 150°C, Inductive load
Irr
Irr
trr
trr
0.1
10
0.1
10
100
1000
Emitter Current [A]
10000
100
1000
Emitter Current [A]
10000
Feb 2013 (HVM-1068)
8
< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
t
n
Rth(j-c)Q = 18.5K/kW
Rth(j-c)D = 42.0K/kW
i
(t)
1exp
Zth( jc)
R
i
i1
1
0.8
0.6
0.4
0.2
0
1
2
3
4
Ri [K/kW] :
0.0096
0.0001
0.1893
0.0058
0.4044
0.0602
0.3967
0.3512
i [sec.] :
0.001
0.01
0.1
1
10
Time [s]
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
3000
10000
VCC 1200V, VGE = ±15V
RG(on)1.3ꢀ, RG(off)3.3ꢀ
Tj = 150°C, tpsc 10µs
V
CC 1200V, VGE = ±15V
Tj = 150°C, RG(off) 3.3ꢀ
2500
2000
1500
1000
500
8000
6000
4000
2000
0
0
0
500
1000
1500
2000
0
500
1000
1500
2000
Collector-Emitter Voltage [V]
Collector-Emitter Voltage [V]
Feb 2013 (HVM-1068)
9
< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
3000
VCC 1200 V, di/dt 7200A/µs
T = 150°C
j
2500
2000
1500
1000
500
0
0
500
1000
1500
2000
Collector-Emitter Voltage [V]
Feb 2013 (HVM-1068)
10
< HVIGBT MODULES >
CM1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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Feb 2013 (HVM-1068)
11
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