ATF585S08B [POSEICO]
FAST SWITCHING THYRISTOR;
| 型号： | ATF585S08B |
| 厂家： | 
POWER SEMICONDUCTORS |
| 描述： | FAST SWITCHING THYRISTOR 开关 |
| 文件： | 总3页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST SWITCHING THYRISTOR
ATF585
Repetitive voltage up to
Mean on-state current
Surge current
800 V
445 A
6 kA
FINAL SPECIFICATION
Turn-off time
15 µs
mag 06 - ISSUE : 04
Tj
Symbol
Characteristic
Conditions
Value
Unit
[°C]
BLOCKING
V RRM
V RSM
V DRM
I RRM
I DRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
125
125
125
125
125
800
900
800
40
V
V
V
V=VRRM
V=VDRM
mA
mA
40
CONDUCTING
I T (AV)
I T (AV)
I TSM
I² t
Mean on-state current
Mean on-state current
Surge on-state current, non repetitive
I² t
180°sin, 50 Hz, Th=55°C, double side cooled
180°sin, 1 kHz, Th=55°C, double side cooled
sine wave, 10 ms
445
400
A
A
125
6
kA
without reverse voltage
180 x1E3
1,7
A²s
V
V T
On-state voltage
On-state current =
800 A
25
V
T(TO)
Threshold voltage
125
1,30
V
r T
On-state slope resistance
125 0,325
mohm
SWITCHING
di/dt
dv/dt
td
Critical rate of rise of on-state current, min
Critical rate of rise of off-state voltage, min
Gate controlled delay time, typical
From 75% VDRM up to 1200 A, gate 20V 10 ohm
Linear ramp up to 70% of VDRM
125
125
25
200
500
0,6
15
A/µs
V/µs
µs
VD=100V, gate source 20V, 10 ohm , tr=1 µs
tq
Circuit commutated turn-off time
di/dt = 20
dV/dt = 200 V/µs , up to 75% VDRM
di/dt = 60 A/µs, I I = 1000
VR = 50
A/µs, I I = 250
A
125
µs
Q rr
I rr
I H
Reverse recovery charge
Peak reverse recovery current
Holding current, typical
A
125
140
104
75
µC
A
V
VD=5V, gate open circuit
VD=12V, tp=30µs
25
25
mA
mA
I L
Latching current, typical
150
GATE
V GT
I GT
Gate trigger voltage
VD=5V
25
25
125
25
25
25
25
25
3,5
350
0,25
25
V
mA
V
Gate trigger current
VD=5V
V GD
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
VD=VDRM
V
FGM
FGM
RGM
GM
V
I
8
A
V
P
P
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
5
V
Pulse width 100 µs
100
1
W
W
G(AV)
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
95
°C/kW
°C
T
F
j
Operating junction temperature
Mounting force
-30 / 125
4.5 / 5.0
55
kN
Mass
g
tq code
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
tq code
ORDERING INFORMATION : ATF585 S 08 B
VDRM&VRRM/100
standard specification
POSEICO
ATF585 FAST SWITCHING THYRISTOR
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION mag 06 - ISSUE : 04
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
400
350
300
250
200
150
100
50
1000 A
250 A
100 A
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
500
400
300
200
100
0
1000 A
100 A
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
di/dt
ta = Irr / (di/dt)
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb = trr - ta
IF
ta
tb
Irr
Vr
POSEICO
ATF585 FAST SWITCHING THYRISTOR
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION mag 06 - ISSUE : 04
ON-STATE CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
1600
1400
1200
1000
800
600
400
200
0
7
6
5
4
3
2
1
0
0,6
1,1
1,6
2,1
2,6
1
10
100
On-state Voltage [V]
n°cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
100
90
80
70
60
50
40
30
20
10
0
0,001
0,01
0,1
1
10
100
t[s]
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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