ATF743 [POSEICO]
FAST SWITCHING THYRISTOR;
| 型号： | ATF743 |
| 厂家： | 
POWER SEMICONDUCTORS |
| 描述： | FAST SWITCHING THYRISTOR 开关 |
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST SWITCHING THYRISTOR
ATF743
Repetitive voltage up to
Mean on-state current
Surge current
2000 V
2595 A
36 kA
FINAL SPECIFICATION
Turn-off time
70 µs
mag 06 - ISSUE : 02
Tj
Symbol
Characteristic
Conditions
Value
Unit
[°C]
BLOCKING
V RRM
V RSM
V DRM
I RRM
I DRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
125
125
125
125
125
2000
2100
2000
300
V
V
V
V=VRRM
V=VDRM
mA
mA
300
CONDUCTING
I T (AV)
I T (AV)
I TSM
I² t
Mean on-state current
Mean on-state current
Surge on-state current, non repetitive
I² t
180°sin, 50 Hz, Th=55°C, double side cooled
180°sin, 1 kHz, Th=55°C, double side cooled
sine wave, 10 ms
2595
2390
36
A
A
125
kA
without reverse voltage
6480 x1E3
2,02
A²s
V
V T
On-state voltage
On-state current =
4000 A
125
125
V T(TO)
r T
Threshold voltage
1,30
V
On-state slope resistance
125 0,180
mohm
SWITCHING
di/dt
dv/dt
td
Critical rate of rise of on-state current, min
Critical rate of rise of off-state voltage, min
Gate controlled delay time, typical
From 75% VDRM up to 1200 A, gate 10V 5 ohm
Linear ramp up to 75% of VDRM
125
125
25
500
600
0,8
70
A/µs
V/µs
µs
VD=200V, gate source 20V, 10 ohm , tr=.5 µs
tq
Circuit commutated turn-off time
di/dt = 60
dV/dt = 200 V/µs , up to 80% VDRM
di/dt = 60 A/µs, I I = 4000
VR = 50
A/µs, I I = 2000
A
125
µs
Q rr
I rr
I H
Reverse recovery charge
Peak reverse recovery current
Holding current, typical
A
125
800
350
µC
A
V
VD=5V, gate open circuit
VD=12V, tp=30µs
25
25
mA
mA
I L
Latching current, typical
GATE
V GT
I GT
Gate trigger voltage
VD=5V
25
25
125
25
25
25
25
25
3,5
350
0,25
30
V
mA
V
Gate trigger current
VD=5V
V GD
V FGM
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
VD=VDRM
V
I
FGM
10
A
V RGM
P GM
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
5
V
Pulse width 100 µs
150
2
W
W
P G(AV)
MOUNTING
R th(j-h)
T j
Thermal impedance, DC
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
11
°C/kW
°C
-30 / 125
35.0 / 40.0
1700
F
kN
Mass
g
tq code
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
tq code
ORDERING INFORMATION : ATF743 S 20 U
VDRM&VRRM/100
standard specification
POSEICO
ATF743 FAST SWITCHING THYRISTOR
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION mag 06 - ISSUE : 02
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
2500
2000
1500
1000
500
4000 A
2000 A
1000 A
0
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
1400
1200
1000
800
600
400
200
0
4000 A
2000 A
1000 A
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
di/dt
ta = Irr / (di/dt)
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb = trr - ta
IF
ta
tb
Irr
Vr
POSEICO
ATF743 FAST SWITCHING THYRISTOR
POSEICO SPA
POwer SEmiconductors Italian COrporation
FINAL SPECIFICATION mag 06 - ISSUE : 02
ON-STATE CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
40
35
30
25
20
15
10
5
0
1
10
100
0,6
1,1
1,6 2,1
On-state Voltage [V]
2,6
n°cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
14
12
10
8
6
4
2
0
0,001
0,01
0,1
1
10
100
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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