F1001C [POLYFET]
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR; PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管型号: | F1001C |
厂家: | POLYFET RF DEVICES |
描述: | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
文件: | 总2页 (文件大小:37K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
polyfet rf devices
F1001C
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier
Base Stations, Broadcast FM/AM,
MRI, Laser Driver and others.
20Watts Single Ended
Package Style AC
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
and high F enhance broadband
t
performance
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Junction to
Maximum
Junction
Temperature
Storage
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
Device
Dissipation
Case Thermal
Resistance
Temperature
o
o
o
o
50Watts
3.13
2 A
70 V
70V
C/W
200 C
-65 C to 150 C
30V
RF CHARACTERISTICS (
20WATTS OUTPUT )
SYMBOL
Gps
PARAMETER
MIN
16
TYP
MAX
UNITS
dB
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Idq = 0.2 A, Vds = 28.0V, F = 175MHz
Idq = 0.2 A, Vds = 28.0V, F = 175MHz
60
%
h
VSWR
Load Mismatch Tolerance
20:1
Relative Idq = 0.2 A, Vds = 28.0V, F = 175MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
Bvdss
Idss
PARAMETER
MIN
65
TYP
MAX
UNITS
V
TEST CONDITIONS
Ids = 0.05A,
Vds = 28.0 V, Vgs = 0V
Drain Breakdown Voltage
Zero Bias Drain Current
Vgs = 0V
1
1
7
mA
uA
Igss
Gate Leakage Current
Vds = 0 V,
Vgs = 30V
Vgs = Vds
Vgs
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
1
Ids = 0.1 A,
V
Mho
Ohm
Amp
pF
gM
0.8
1
Vds = 10V, Vgs = 5V
Rdson
Idsat
Ciss
Vgs = 20V, Ids = 4A
Saturation Current
5.5
33
4
Vgs = 20V, Vds = 10V
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
Vds = 28.0V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0V, Vgs = 0V, F = 1 MHz
Crss
pF
Coss
20
pF
REVISION 8/1/97
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1001C
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1001C POUT vs PIN IDQ=0.1A; F=175 MHZ VDS=28V
F1B 1 DIE Capacitance vs Vds
35
30
25
20
15
10
5
20
100
10
1
19
18
17
16
15
14
13
12
11
10
Coss
Ciss
Crss
Efficiency = 75%
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
PIN IN WATTS
0
5
10
15
20
25
30
VDS IN VOLTS
POUT
GAIN
IV CURVE
ID AND GM VS VGS
F1B 1DIE IV CURVE
F1B 1 DIE GM & ID vs VG
6
5
4
3
2
1
0
10
Id
1
Gm
0.1
0
2
4
6
8
10
12
14
16
18
20
0.01
Vds in Volts
0
2
4
6
8
10
12
14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION 8/1/97
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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