F1002 [POLYFET]
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR; PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管
| 型号： | F1002 |
| 厂家： | 
POLYFET RF DEVICES |
| 描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
polyfet rf devices
F1002
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
40Watts Single Ended
Package Style AA
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
and high F enhance broadband
t
performance
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Junction to
Maximum
Junction
Temperature
Storage
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
Device
Dissipation
Case Thermal
Resistance
Temperature
o
o
o
o
80 Watts
1.95
4 A
70 V
70V
C/W
200 C
-65 C to 150 C
30V
RF CHARACTERISTICS (
40WATTS OUTPUT )
SYMBOL
Gps
PARAMETER
MIN
15
TYP
MAX
UNITS
dB
TEST CONDITIONS
Common Source Power Gai
Drain Efficiency
Idq = 0.4 A, Vds = 28.0V, F = 175 MHz
Idq = 0.4 A, Vds = 28.0V, F = 175 MHz
60
%
h
VSWR
Load Mismatch Toleranc
20:1
Relative Idq = 0.4 A, Vds = 28.0V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
Bvdss
Idss
PARAMETER
MIN
65
TYP
MAX
UNITS
V
TEST CONDITIONS
Ids = 0.1 A,
Vds = 28.0 V, Vgs = 0V
Drain Breakdown Voltag
Zero Bias Drain Curren
Vgs = 0V
2
1
7
mA
uA
Igss
Gate Leakage Curren
Vds = 0 V,
Vgs = 30V
Vgs = Vds
Vgs
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
1
Ids = 0.2 A,
V
Mho
Ohm
Amp
pF
gM
1.6
0.7
11
66
8
Vds = 10V, Vgs = 5V
Rdson
Idsat
Ciss
Vgs = 20V, Ids = 8A
Saturation Curren
Vgs = 20V, Vds = 10V
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
pF
Coss
40
pF
REVISION 8/1/97
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1002
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1002 POUT vs PIN Idq= 0.4A F=175 Mhz VDS = 28V
F1B 2 DICE CAPACITANCE
60
50
40
30
20
10
0
18
17
16
15
14
13
12
11
10
1000
100
10
1
Coss
Ciss
Crss
EFFICIENCY = 75%
0
0.5
1
1.5
2
2.5
3
3.5
PIN IN WATTS
0
5
10
15
20
25
30
POUT
GAIN
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F1B 2 DICE IV CURVE
F1B 2 DIE GM & ID vs VGS
12
10
8
100
10
1
Id
6
4
2
Gm
0
0
2
4
6
8
10
12
14
16
18
20
0.1
Vds in Volts
0
2
4
6
8
10
12
14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION 8/1/97
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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