BYC8X-600P,127 [NXP]
BYC8X-600P;
| 型号： | BYC8X-600P,127 |
| 厂家： | 
NXP |
| 描述： | BYC8X-600P |
| 文件： | 总9页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
F
0
2
2
-
O
T
BYC8X-600P
Hyperfast power diode
3 January 2014
Product data sheet
1. General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
Fast switching
Isolated plastic package
Low leakage current
Low reverse recovery current
Low thermal resistance
•
•
•
•
•
•
Reduces switching losses in associated MOSFET
3. Applications
Continuous Current Mode (CCM) Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode power supplies
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VRRM
repetitive peak reverse
voltage
-
-
600
V
IF(AV)
average forward
current
δ = 0.5 ; Th ≤ 75 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
-
-
8
A
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 125 °C; Fig. 6
-
-
1.5
12
1.9
18
V
Dynamic characteristics
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
ns
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
K
A
1
K
cathode
001aaa020
2
A
anode
mb
n.c.
mounting base; isolated
1
2
TO-220F (SOD113)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOD113
BYC8X-600P
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
7. Marking
Table 4.
Marking codes
Type number
Marking code
BYC8X-600P
BYC8X-600P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VRRM
VRWM
VR
Parameter
Conditions
Min
Max
600
600
600
8
Unit
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
-
-
-
-
V
V
V
A
DC
IF(AV)
average forward current
δ = 0.5 ; Th ≤ 75 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
IFRM
repetitive peak forward current δ = 0.5 ; tp = 25 µs; Th ≤ 75 °C; square-
wave pulse
-
16
A
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
2 / 9
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
Symbol
Parameter
Conditions
Min
Max
Unit
IFSM
non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
-
91
A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
-
100
A
Tstg
Tj
storage temperature
junction temperature
-65
-
175
175
°C
°C
003aaj898
= 1
003aaj899
24
20
δ
P
tot
(W)
16
a = 1.57
P
tot
(W)
0.5
1.9
2.2
16
2.8
0.2
12
8
4.0
0.1
8
0
4
0
0
4
8
12
0
2
4
6
8
I
(A)
I
(A)
F(AV)
F(AV)
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
003aaj901
003aaj902
4
12
10
P
I
I
FSM
F(AV)
(A)
(A)
75 °C
3
t
8
4
0
10
10
t
p
2
10
-5
10
-4
-3
-2
10
-50
0
50
100
150
200
(°C)
10
10
T
t (s)
p
h
Fig. 3. Average forward current as a function of
heatsink temperature; maximum values
Fig. 4. Non-repetitive peak forward current as a
function of pulse width; square waveform;
maximum values
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
3 / 9
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
7.2
Unit
K/W
K/W
Rth(j-h)
thermal resistance
from junction to
heatsink
without heatsink compound
with heatsink compound ; Fig. 5
-
-
-
-
5.5
Rth(j-a)
thermal resistance
from junction to
ambient free air
-
60
-
K/W
001aaf257
10
th(j-h)
(K/W)
Z
1
- 1
- 2
- 3
10
10
10
t
p
P
δ =
T
t
t
p
T
- 6
- 5
- 4
- 3
- 2
- 1
10
10
10
10
10
10
1
10
t
(s)
p
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse width
10. Isolation characteristics
Table 7.
Symbol
Isolation characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
-
-
2500
V
waveform; clean and dust free
Cisol
isolation capacitance
f = 1 MHz ; from cathode to external
heatsink
-
10
-
pF
11. Characteristics
Table 8.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 25 °C; Fig. 6
IF = 8 A; Tj = 125 °C; Fig. 6
IF = 8 A; Tj = 150 °C
-
-
-
-
3.4
1.9
-
V
V
V
1.5
1.4
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
4 / 9
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
Symbol
Parameter
Conditions
Min
Typ
Max
20
Unit
µA
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 125 °C
-
-
-
-
200
µA
Dynamic characteristics
Qr recovered charge
IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
-
-
-
-
-
-
17
90
12
19
-
-
nC
nC
ns
ns
A
IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
-
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
18
-
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; Fig. 7
IRM
peak reverse recovery IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
2.2
6
current
Tj = 25 °C; Fig. 7
IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
-
A
003aaj903
dl
F
16
I
F
dt
I
F
(A)
12
t
rr
time
25 %
(1)
(2)
(3)
8
4
0
100 %
Q
r
I
I
RM
R
003aac562
0
1
2
3
4
V
(V)
F
Fig. 7. Reverse recovery definitions; ramp recovery
Fig. 6. Forward current as a function of forward
voltage
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
5 / 9
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
12. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 'full pack'
SOD113
A
A
1
E
P
z
q
m
T
D
H
E
L
2
j
(1)
L
1
k
Q
L
1
2
b
1
b
M
w
c
e
(2)
z
0
10
20 mm
scale
0.8
DIMENSIONS (mm are the original dimensions)
H
max
L
2
max
E
(1)
UNIT
mm
A
A
b
b
c
D
E
e
j
k
L
L
1
m
P
Q
q
T
w
1
1
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
0.7 15.8 10.3
0.4 15.2 9.7
2.7
1.7
0.6 14.4 3.3
0.4 2.8
6.5
6.3
3.2
3.0
2.6
2.3
5.08 19.0
0.5
2.6 2.55
0.4
13.5
Notes
1. Terminals are uncontrolled within zone L .
1
2. z is depth of T.
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
02-04-09
07-06-18
SOD113
2-lead TO-220F
Fig. 8. Package outline TO-220F (SOD113)
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
6 / 9
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
13. Legal information
13.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
13.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
7 / 9
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
8 / 9
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
14. Contents
1
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Isolation characteristics ........................................4
Characteristics .......................................................4
Package outline ..................................................... 6
2
3
4
5
6
7
8
9
10
11
12
13
Legal information ...................................................7
Data sheet status ................................................. 7
Definitions .............................................................7
Disclaimers ...........................................................7
Trademarks .......................................................... 8
13.1
13.2
13.3
13.4
© NXP N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 January 2014
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
9 / 9
相关型号：
BYD1100,115
DIODE 0.85 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
NXP
©2020 ICPDF网 联系我们和版权申明