BYD11G [NXP]
Controlled avalanche rectifiers; 控制雪崩整流器
| 型号： | BYD11G |
| 厂家： | 
NXP |
| 描述： | Controlled avalanche rectifiers |
| 文件： | 总7页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BYD11 series
Controlled avalanche rectifiers
1996 Sep 26
Product specification
Supersedes data of April 1996
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
FEATURES
• Glass passivated
• High maximum operating
a
temperature
k
• Low leakage current
• Excellent stability
MAM196
• Guaranteed avalanche energy
absorption capability
Fig.1 Simplified outline (SOD91) and symbol.
• Available in ammo-pack.
DESCRIPTION
MARKING
Cavity free cylindrical glass package
through Implotec (1) technology.
TYPE NUMBER
MARKING CODE
BYD11D
BYD11G
BYD11J
BYD11K
BYD11M
11D
11G
11J
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
11K
11M
(1) Implotec is a trademark of Philips.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
repetitive peak reverse voltage
BYD11D
CONDITIONS
MIN.
MAX.
UNIT
VRRM
−
−
−
−
−
200
400
600
800
V
V
V
V
V
BYD11G
BYD11J
BYD11K
BYD11M
1000
VRWM
crest working reverse voltage
BYD11D
−
−
−
−
−
200
400
V
V
V
V
V
BYD11G
BYD11J
600
BYD11K
800
BYD11M
1000
VR
continuous reverse voltage
BYD11D
−
−
−
−
−
200
400
V
V
V
V
V
BYD11G
BYD11J
600
BYD11K
800
BYD11M
1000
1996 Sep 26
2
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
SYMBOL
PARAMETER
CONDITIONS
Ttp = 55 °C;
MIN.
MAX.
0.50 A
UNIT
IF(AV)
−
average forward current
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
−
0.37 A
Tamb = 60 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
−
10
A
PRSM
non-repetitive peak reverse power
dissipation
t = 20 µs half sinewave;
Tj = Tj max prior to surge
200
W
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
see Fig.5
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IF = 0.5 A; Tj = Tj max; see Fig.6
IF = 0.5 A; see Fig.6
MIN.
TYP.
MAX.
UNIT
VFtzt
forward voltage
−
−
−
−
0.91
1.06
V
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYD11D
BYD11G
225
450
650
900
1100
−
−
−
−
−
−
−
−
−
−
V
V
BYD11J
−
V
BYD11K
−
V
BYD11M
−
V
IR
reverse current
1
µA
µA
VR = VRRMmax; see Fig.7
−
75
VR = VRRMmax; Tj = 165 °C; see Fig.7
trr
reverse recovery time
diode capacitance
−
3
−
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.10
µs
Cd
−
14
−
VR = 0 V; f = 1 MHz; see Fig.8
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
180
250
K/W
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
GRAPHICAL DATA
MBG042
MBG051
0.8
0.8
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
0.6
0.6
0.4
0.2
0.4
0.2
0
0
0
0
40
80
120
160
200
( C)
40
80
120
160
T
200
o
o
T
( C)
tp
amb
a = 1.57; VR = VRRMmax; δ = 0.5.
a = 1.57; VR = VRRMmax; δ = 0.5.
Lead length 10 mm.
Device mounted as shown in Fig.9.
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
MBG634
MCD583
0.8
200
handbook, halfpage
handbook, halfpage
a = 3 2.5
2
P
(W)
1.57
1.42
T
j
o
0.6
(
C)
0.4
0.2
0
100
D
G
J
K
M
0
0
0.2
0.4
0.6
0
500
1000
I
(A)
F (AV)
V
(V)
R
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
1996 Sep 26
4
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
MCD582
MBG047
3
10
4
handbook, halfpage
handbook, halfpage
I
F
I
R
(A)
(µA)
3
2
10
2
1
10
1
0
0
0
100
200
o
1
2
V
(V)
(
)
C
T
F
j
Solid line: Tj = 25 °C.
VR = VRRMmax
.
Dotted line: Tj = 175 °C.
Fig.6 Forward current as a function of forward
voltage; maximum values.
Fig.7 Reverse current as a function of junction
temperature; maximum values.
MBG025
1
10
handbook, halfpage
50
handbook, halfpage
25
C
d
(pF)
7
50
1
2
3
−1
10
3
2
1
10
10
10
V
(V)
R
MGA200
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 Sep 26
5
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 Sep 26
6
Not recommended for new designs
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD11 series
PACKAGE OUTLINE
3.5 max
3.0 max
0.55
max
1.7
max
MBC053
29 min
29 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.11 SOD91.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 26
7
Not recommended for new designs
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