BAS516 [NXP]
High-speed diode; 高速二极管型号: | BAS516 |
厂家: | NXP |
描述: | High-speed diode |
文件: | 总12页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAS516
High-speed diode
1998 Aug 31
Product specification
Philips Semiconductors
Product specification
High-speed diode
BAS516
FEATURES
PINNING
PIN
• Ultra small plastic SMD package
DESCRIPTION
• High switching speed: max. 4 ns
1
2
cathode
anode
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
handbook, halfpage
1
2
APPLICATIONS
• High-speed switching in e.g. surface mounted circuits.
MAM408
Top view
DESCRIPTION
The BAS516 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD523
(SC79) SMD plastic package.
Marking code: 6.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
85
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
V
75
IF
Ts = 90 °C; note 1; see Fig.2
250
500
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
−
−
4
A
1
A
0.5
500
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Ts = 90 °C; note 1
mW
°C
°C
−65
−
Note
1. Ts is the temperature at the soldering point of the cathode tab.
1998 Aug 31
2
Philips Semiconductors
Product specification
High-speed diode
BAS516
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 25 V
VR = 75 V
715
mV
855
1
mV
V
1.25
V
IR
reverse current
30
1
nA
µA
µA
µA
pF
ns
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C;
f = 1 MHz; VR = 0; see Fig.6
30
50
1
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
4
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
120
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point note 1
Note
1. Soldering point of the cathode tab.
1998 Aug 31
3
Philips Semiconductors
Product specification
High-speed diode
BAS516
GRAPHICAL DATA
MGM762
MBG382
500
300
handbook, halfpage
handbook, halfpage
I
F
I
(mA)
F
(mA)
400
(1)
(2)
(3)
200
300
200
100
0
100
0
0
1
2
0
50
100
150
200
V
(V)
F
o
T
( C)
s
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous
forward current as a function of
soldering point temperature.
Fig.3 Forward current as a function of
forward voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1998 Aug 31
4
Philips Semiconductors
Product specification
High-speed diode
BAS516
MBK881
MGA884
5
0.6
10
handbook, halfpage
I
R
C
d
(nA)
(pF)
V
= 75 V
R
4
3
10
0.4
max
75 V
25 V
10
0.2
2
10
typ
typ
0
0
10
0
100
4
8
12
16
200
o
( C)
T
j
V
(V)
R
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of
reverse voltage; typical values.
1998 Aug 31
5
Philips Semiconductors
Product specification
High-speed diode
BAS516
t
t
p
r
t
D.U.T.
10%
I
F
I
t
R
= 50 Ω
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005.
Fig.8 Forward recovery voltage test circuit and waveforms.
1998 Aug 31
6
Philips Semiconductors
Product specification
High-speed diode
BAS516
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v
M
A
H
E
A
D
0
0.5
1 mm
scale
1
2
DIMENSIONS (mm are the original dimensions)
b
E
p
UNIT
A
b
c
D
E
H
v
p
E
0.35
0.25
0.2
0.1
0.7
0.5
1.3
1.1
0.9
0.7
1.7
1.5
mm
0.15
(1)
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-11-25
SOD523
SC-79
1998 Aug 31
7
Philips Semiconductors
Product specification
High-speed diode
BAS516
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 31
8
Philips Semiconductors
Product specification
High-speed diode
BAS516
NOTES
1998 Aug 31
9
Philips Semiconductors
Product specification
High-speed diode
BAS516
NOTES
1998 Aug 31
10
Philips Semiconductors
Product specification
High-speed diode
BAS516
NOTES
1998 Aug 31
11
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
115104/00/01/pp12
Date of release: 1998 Aug 31
Document order number: 9397 750 04287
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