BAS52-02V-E6433 [INFINEON]
Rectifier Diode, Schottky, 1 Element, 0.5A, 45V V(RRM),;型号: | BAS52-02V-E6433 |
厂家: | Infineon |
描述: | Rectifier Diode, Schottky, 1 Element, 0.5A, 45V V(RRM), 二极管 |
文件: | 总7页 (文件大小:71K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS52...
Silicon Schottky Diode
• Medium current rectifier Schottky diode
• Low forward voltage at 200mA
• High reverse voltage
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BAS52-02V
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BAS52-02V
Package
Configuration
Marking
SC79
single
y
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
45
Unit
V
Diode reverse voltage
Forward current
V
R
750
mA
I
F
Average rectified forward current (50/60Hz, sinus) I
500
mA
FAV
Non-repetitive peak surge forward current
t = 100 µs
I
2000
FSM
500
mW
°C
Total power dissipation
P
tot
T ≤ 110°C
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
2)
K/W
Junction - soldering point
R
≤ 60
thJS
1Pb-containing package may be available upon special request
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-04-19
1
BAS52...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Reverse current
I
µA
mV
pF
R
V = 45 V
-
-
-
-
-
-
-
-
10
30
1
R
V = 5 V, T = 70 °C
R
A
V = 10 V
R
V = 10 V, T = 85 °C
80
R
A
Forward voltage
I = 10 mA
V
F
-
-
335
430
500
420
530
600
F
I = 100 mA
F
I = 200 mA
400
F
AC Characteristics
-
5
10
Diode capacitance
C
T
V = 10 V, f = 1 MHz
R
2007-04-19
2
BAS52...
Reverse current I = ƒ (T )
Reverse current I = ƒ(V )
R R
R
A
V = Parameter
T = Parameter
R
A
10 -3
A
10 -3
A
125°C
10 -4
10 -5
10 -6
10 -4
10 -5
10 -6
10 -7
10 -8
10 -9
10 -10
85°C
25°C
VR=10V
10 -7
10 -8
VR=5V
-40°C
10 -9
10 -10
°C
V
-50 -30 -10 10 30 50 70 90
130
0
10
20
30
40
55
T
V
R
A
Forward Voltage V = ƒ (T )
Forward current I = ƒ (V )
F F
F
A
I = Parameter
T = Parameter
F
A
10 0
A
580
V
500
460
420
380
340
300
260
220
180
IF=200mA
IF=100mA
10 -1
10 -2
10 -3
-40 °C
25 °C
85 °C
125 °C
IF=10mA
°C
V
-50 -30 -10 10 30 50 70 90
130
0
0.1
0.2 0.3 0.4 0.5
0.6
0.8
T
V
F
A
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BAS52...
Permissible Reverse voltage V = ƒ (T )
Forward current I = ƒ (T )
F S
R
A
t = Parameter
p
Duty cycle < 0.01
50
V
800
mA
tp=300µs
tp=100ms
DC
40
35
30
25
20
15
10
5
600
500
400
300
200
100
0
0
°C
°C
0
20
40
60
80 100 120
160
0
15 30 45 60 75 90 105 120
150
T
T
S
A
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
thJS
p
I
/ I
= ƒ (t )
Fmax FDC p
10 2
10 2
K/W
10 1
10 1
D = 0
0.005
0.01
0.02
0.05
0.1
0.5
0.2
0.1
0.05
0.02
0.01
10 0
0.2
0.5
0.005
D = 0
10 -1
10 -6
10 0
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2007-04-19
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Package SC79
BAS52...
Package Outline
M
0.2
A
+0.05
-0.03
±0.1
0.13
0.8
A
2
1
0.3
Cathode
marking
±0.05
±0.04
0.55
Foot Print
0.35
Marking Layout (Example)
2005, June
Date code
BAR63-02V
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)
Reel ø330 mm = 10.000 Pieces/Reel
Standard
4
Reel with 2 mm Pitch
2
0.2
0.4
0.66
Cathode
marking
Cathode
marking
0.93
2007-04-19
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BAS52...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01
02
03
04
05
06
07
08
09
10
11
12
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
s
t
s
t
s
t
u
v
x
y
z
2
3
u
v
x
y
z
2
3
u
v
x
y
z
2
3
g
h
j
g
h
j
g
h
j
k
l
K
L
k
l
K
L
k
l
K
L
n
N
5
n
N
5
n
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
2007-04-19
6
BAS52...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-19
7
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