BAS521 [LGE]
High voltage switching diode; 高压开关二极管
| 型号： | BAS521 |
| 厂家： | 
LGE |
| 描述： | High voltage switching diode |
| 文件： | 总4页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS521
High voltage switching diode
SOD-523
FEATURES
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Repetitive peak forward current: 625 mA
• Ultra small plastic SMD package.
APPLICATIONS
• High speed switching
• High voltage switching.
Dimensions in inches and (millimeters)
PINNING
PIN
DESCRIPTION
DESCRIPTION
The BAS521 is a high-voltage switching diode fabricated
in planar technology and encapsulated in an ultra small
SOD523 (SC-79) plastic SMD package.
1
2
cathode
anode
LIMITING VALUES
In accordance with the absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
300
UNIT
VR
continuous reverse voltage
repetitive peak reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
−
V
V
VRRM
IF
IFRM
IFSM
300
250
1
Ts ≤ 90 °C; note 1
tp = 1 ms; δ = 0.25
mA
A
non-repetitive peak forward current tp = 1 µs; square wave; Tj = 25 °C
4.5
A
prior to surge
Ptot
Tstg
Tj
total power dissipation
storage temperature
Ts ≤ 90 °C; note 1
−
500
mW
°C
−65
+150
150
junction temperature
−
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Ts is the temperature at the soldering point of the cathode tab.
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BAS521
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
300
TYP.
340
MAX.
UNIT
VBR
VF
IR
breakdown voltage
forward voltage
reverse current
IR = 100 µA
−
V
V
IF = 100 mA; note 1
VR = 250 V
−
−
−
−
0.95
30
1.1
150
100
50
nA
µA
ns
VR = 250 V; Ta = 150 °C
40
trr
reverse recovery time
diode capacitance
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured at
IR = 3 mA
16
Cd
VR = 0 V; f = 1 MHz
−
0.4
5
pF
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
note 1
note 2
VALUE
UNIT
K/W
K/W
thermal resistance from junction to solder point
thermal resistance from junction to ambient
120
500
Rth j-a
Notes
1. Soldering point of the cathode tab.
2. Refer to SOD523 (SC-79) standard mounting conditions.
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BAS521
GRAPHICAL DATA
MHC618
MHC619
2
10
500
handbook, halfpage
handbook, halfpage
I
F
I
R
(mA)
(µA)
400
10
300
200
100
1
−1
10
(1) (2)
(3)
1
−2
10
0
0
0
40
80
120
160
200
T (°C)
0.5
1.5
V
(V)
F
j
(1) Tamb = 150 °C.
(2) Tamb = 75 °C.
VR = VRmax; typical values.
(3)
Tamb =25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of junction
temperature.
MHC620
MHC621
300
0.42
handbook, halfpage
handbook, halfpage
C
d
I
F
(pF)
0.38
(mA)
200
100
0.34
0.3
0
0
50
100
150
200
(°C)
0
10
20
30
40
V
(V)
R
T
amb
Fig.4 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
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BAS521
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25°C prior to surge.
Fig.6 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
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Email:lge@luguang.cn
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